零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
EP9160 | SMD 28 Pin Passive Delay Lines SMD28PinPassiveDelayLines | PCA PCA ELECTRONICS INC. | PCA | |
30A,-100V,0.095Ohm,RadHard,P-ChannelPowerMOSFETs Description TheIntersilCorporationSectorhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25m?.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)with | Intersil Intersil Corporation | Intersil | ||
30A,-100V,0.095Ohm,RadHard,P-ChannelPowerMOSFETs Description TheIntersilCorporationSectorhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25m?.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)with | Intersil Intersil Corporation | Intersil | ||
30A,-100V,0.095Ohm,RadHard,P-ChannelPowerMOSFETs Description TheIntersilCorporationSectorhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25m?.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)with | Intersil Intersil Corporation | Intersil | ||
40A,-100V,0.085Ohm,RadHard,P-ChannelPowerMOSFETs Description TheHarrisSemiconductorSectorhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25m?.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)with | Intersil Intersil Corporation | Intersil | ||
40A,-100V,0.085Ohm,RadHard,P-ChannelPowerMOSFETs Description TheHarrisSemiconductorSectorhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25m?.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)with | Intersil Intersil Corporation | Intersil | ||
40A,-100V,0.085Ohm,RadHard,P-ChannelPowerMOSFETs Description TheHarrisSemiconductorSectorhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25m?.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)with | Intersil Intersil Corporation | Intersil | ||
44A,-100V,0.055Ohm,RadHard,SEGRResistant,P-ChannelPowerMOSFETs Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inpartic | Intersil Intersil Corporation | Intersil | ||
44A,-100V,0.055Ohm,RadHard,SEGRResistant,P-ChannelPowerMOSFETs Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inpartic | Intersil Intersil Corporation | Intersil | ||
44A,-100V,0.055Ohm,RadHard,SEGRResistant,P-ChannelPowerMOSFETs Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inpartic | Intersil Intersil Corporation | Intersil | ||
RadiationHardened,SEGRResistantP-ChannelPowerMOSFETs Description TheDiscreteProductsOperationofIntersilhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticular,iscombi | Intersil Intersil Corporation | Intersil | ||
RadiationHardened,SEGRResistantP-ChannelPowerMOSFETs Description TheDiscreteProductsOperationofIntersilhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticular,iscombi | Intersil Intersil Corporation | Intersil | ||
HANDLE | BUD Bud Industries, Inc. | BUD | ||
HANDLE | etc2List of Unclassifed Manufacturers etc未分類制造商etc2未分類制造商 | etc2 | ||
FrequencySynthesizer | SHOULDERShoulder 好達電子無錫市好達電子股份有限公司 | SHOULDER | ||
ISDCortex??M0ChipCorder | NuvotonNuvoton Technology Corporation 新唐科技新唐科技股份有限公司 | Nuvoton | ||
ISDCortex??M0ChipCorder | NuvotonNuvoton Technology Corporation 新唐科技新唐科技股份有限公司 | Nuvoton | ||
SimpleDriveRequirements | IRF International Rectifier | IRF | ||
TRANSISTORP-CHANNEL(BVdss=-100V,Rds(on)=0.087ohm,Id=-35*A) RADIATIONHARDENEDPOWERMOSFETTHRU-HOLE(TO-254AA) InternationalRectifier’sRAD-HardHEXFETTMtechnologyprovideshighperformancepowerMOSFETsforspaceapplications.Thistechnologyhasoveradecadeofprovenperformanceandreliabilityinsatelliteapplications.Thesedeviceshavebeenc | IRF International Rectifier | IRF | ||
TRANSISTORP-CHANNEL(BVdss=-100V,Rds(on)=0.087ohm,Id=-38A) InternationalRectifier’sRADHardHEXFETTMtechnologyprovideshighperformancepowerMOSFETsforspaceapplications.Thistechnologyhasoveradecadeofprovenperformanceandreliabilityinsatelliteapplications.ThesedeviceshavebeencharacterizedforbothTotalDoseandSingleEventEffe | IRF International Rectifier | IRF |
詳細參數(shù)
- 型號:
EP9160
- 功能描述:
Delay Line
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
NA |
24+ |
5274 |
原裝現(xiàn)貨假一賠十 |
詢價 | |||
NA |
22+ |
N/A |
354000 |
詢價 | |||
NA |
23+ |
10000 |
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種 |
詢價 | |||
NA |
23+ |
14X14 |
6500 |
專注配單,只做原裝進口現(xiàn)貨 |
詢價 | ||
NA |
23+ |
14X14 |
6500 |
專注配單,只做原裝進口現(xiàn)貨 |
詢價 | ||
EXPLORE |
21+ |
QFP |
993 |
原裝現(xiàn)貨假一賠十 |
詢價 | ||
EXPLORE |
15+ |
LQFP128 |
700 |
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
詢價 | ||
EXPLORE |
24+ |
QFP |
56000 |
公司進口原裝現(xiàn)貨 批量特價支持 |
詢價 | ||
EXPLORE |
23+ |
QFP |
10000 |
原裝正品現(xiàn)貨 |
詢價 | ||
EXPLORE |
2020+ |
QFN |
80000 |
只做自己庫存,全新原裝進口正品假一賠百,可開13%增 |
詢價 |
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