零件編號(hào) | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
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N-ChannelLogicLevelEnhancementModeFieldEffectTransistor GeneralDescription TheseN-ChannellogiclevelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocessisespeciallytailoredtominimizeon-stateresistance.Thesedevicesareparticularlysuit | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
N-ChannelLogicLevelEnhancementModeFieldEffectTransistor N-ChannelLogicLevelEnhancementModeFieldEffectTransistor | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=33A@TC=25℃ ·DrainSourceVoltage- :VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=23mΩ(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·Designedforuseinswitchmod | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
N-ChannelLogicLevelEnhancementModeFieldEffectTransistor GeneralDescription TheseN-ChannellogiclevelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocessisespeciallytailoredtominimizeon-stateresistance.Thesedevicesareparticularlysuit | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=33A@TC=25℃ ·DrainSourceVoltage- :VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=22mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconv | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
6.0AmpMINIATUREPLASTICSILICONRECTIFIERSLOWCOSTLOWLEAKAGE | FCIFirst Components International 戈采戈采企業(yè)股份有限公司 | FCI | ||
SelectionGuide SANKENIGBT FGT313,FGT312,FGT412,FGT612,FGM622S,FGM603,FGM623S,MGD623N,MGD623S | SankenSanken electric 三墾三墾電氣株式會(huì)社 | Sanken | ||
FASTRECOVERYRECTIFIER ReverseVoltage-50to1000Volts ForwardCurrent-6.0Amperes Features ●PlasticpackagehasUnderwritersLaboratory FlammabilityClassification94V-0 ●Fastswitchingforhighefficiency ●Constructionutilizesvoid-freemoldedplastictechnique ●6.0ampereoperationatTA=75withn | Good-Ark GOOD-ARK Electronics | Good-Ark | ||
6.0AMPFASTRECOVERYRECTIFIERS Features ?Axialleadtypedevicesforthroughholedesign. ?Highcurrentcapability. ?Fastswitchingforhighefficiency. ?Highsurgecapability. ?Siliconrubbercoatingchipjunction. ?Lead-freepartsmeetRoHSrequirments. ?Suffix-HindicatesHalogen-freeparts,ex.FR601-H. | FORMOSAFormosa MS 美麗微半導(dǎo)體美麗微半導(dǎo)體股份有限公司 | FORMOSA | ||
6.0AMPFASTRECOVERYRECTIFIERS VOLTAGERANGE50TO1000VoltsCURRENT6.0Amperes FEATURES *Lowforwardvoltagedrop *Highcurrentcapability *Highreliability *Highsurgecurrentcapability | BYTES Bytes | BYTES | ||
TECHNICALSPECIFICATIONSOFFASTRECOVERYRECTIFIER VOLTAGERANGE-50to1000VoltsCURRENT-6.0Amperes FEATURES *Fastswitching *Lowleakage *Lowforwardvoltagedrop *Highcurrentcapability *Highcurrenfsurge *Highreliability | DCCOM Dc Components | DCCOM | ||
6.0AMPS.FASTRECOVERYRECTIFIERS VOLTAGERANGE50to1000VoltsCURRENT6.0Amperes FEATURES *Lowforwardvoltagedrop *Highcurrentcapability *Highreliability *Highsurgecurrentcapability | JGDJinan Gude Electronic Device 濟(jì)南固锝電子濟(jì)南固锝電子器件有限公司 | JGD | ||
6.0AFASTRECOVERYRECTIFIER Features ●DiffusedJunction ●LowForwardVoltageDrop ●HighCurrentCapability ●HighReliability ●HighSurgeCurrentCapability | WTEWon-Top Electronics 毅星電子毅星電子股份有限公司 | WTE | ||
FASTRECOVERYRECTIFIER(VOLTAGERANGE50to1000VoltsCURRENT6.0Amperes) | RECTRON Rectron Semiconductor | RECTRON | ||
6.0AFASTRECOVERYRECTIFIER Features ●LowReverseRecoveryTime ●LowReverseCurrent ●LowForwardVoltageDrop ●HighCurrentCapability ●PlasticMaterial:ULFlammability ClassificationRating94V-0 | DIODES Diodes Incorporated | DIODES | ||
6AmpFastRecoveryRectifier50to1000Volts Features ?Halogenfreeavailableuponrequestbyaddingsuffix-HF ?LeadFreeFinish/RoHSCompliant(Note1)(PSuffixdesignates RoHSCompliant.Seeorderinginformation) ?EpoxymeetsUL94V-0flammabilityrating ?MoistureSensitivityLevel1 ?LowForwardVoltageDrop ?HighCurren | MCCMicro Commercial Components 美微科美微科半導(dǎo)體股份有限公司 | MCC | ||
6.0AFASTRECOVERYDIODE | WTEWon-Top Electronics 毅星電子毅星電子股份有限公司 | WTE | ||
6.0AMPS.FastRecoveryRectifiers Features ◇Highefficiency,LowVF ◇Highcurrentcapability ◇Highreliability ◇Highsurgecurrentcapability ◇Lowpowerloss. | TSCTaiwan Semiconductor Company, Ltd 臺(tái)灣半導(dǎo)體臺(tái)灣半導(dǎo)體股份有限公司 | TSC | ||
FASTRECOVERYRECTIFIER VOLTAGERANGE:50---1000VCURRENT:6.0A FEATURES ◇Lowcost ◇Diffusedjunction ◇Lowleakage ◇Lowforwardvoltagedrop ◇Highcurrentcapability ◇EasilycleanedwithFreon,Alcohol,Isopropanol andsimilarsolvents ◇TheplasticmaterialcarriesU/Lrecognition94V-0 | BILINGalaxy Semi-Conductor Holdings Limited 世紀(jì)微電子常州銀河世紀(jì)微電子股份有限公司 | BILIN | ||
FASTRECOVERYRECTIFIERS REVERSEVOLTAGE-50to1000Volts FORWARDCURRENT-6.0Amperes FEATURES ●Fastswitchingforhighefficiency ●Lowcost ●Diffusedjunction ●Lowreverseleakagecurrent ●Lowforwardvoltagedrop ●Highcurrentcapability ●TheplasticmaterialcarriesULrecognition94V-0 | HY HY ELECTRONIC CORP. | HY |
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
EGISTEC |
QFN |
17432 |
提供BOM表配單只做原裝貨值得信賴 |
詢價(jià) | |||
EGISTEC |
2013+PBF |
QFN |
260 |
剛到現(xiàn)貨加微13425146986 |
詢價(jià) | ||
EGISTEC |
2016+ |
QFN |
9000 |
只做原裝,假一罰十,公司可開17%增值稅發(fā)票! |
詢價(jià) | ||
EGISTEC |
2016+ |
QFN |
6523 |
只做進(jìn)口原裝現(xiàn)貨!假一賠十! |
詢價(jià) | ||
EGISTEC |
2021+ |
QFN |
7806 |
百分百原裝正品 |
詢價(jià) | ||
EGISTEC |
2023+ |
QFN |
80000 |
一級(jí)代理/分銷渠道價(jià)格優(yōu)勢(shì) 十年芯程一路只做原裝正品 |
詢價(jià) | ||
EGISTEC |
21+ |
QFN |
35200 |
一級(jí)代理/放心采購 |
詢價(jià) | ||
EGISTEC |
23+ |
QFN |
30000 |
代理全新原裝現(xiàn)貨,價(jià)格優(yōu)勢(shì) |
詢價(jià) | ||
EGISTEC |
21+ |
QFN |
2420 |
原裝現(xiàn)貨假一賠十 |
詢價(jià) | ||
EGIS |
22+ |
BGA |
32350 |
原裝正品 假一罰十 公司現(xiàn)貨 |
詢價(jià) |
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