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FDB603AL

N-Channel Logic Level Enhancement Mode Field Effect Transistor

GeneralDescription TheseN-ChannellogiclevelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocessisespeciallytailoredtominimizeon-stateresistance.Thesedevicesareparticularlysuit

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FDD603AL

N-ChannelLogicLevelEnhancementModeFieldEffectTransistor

N-ChannelLogicLevelEnhancementModeFieldEffectTransistor

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FDD603AL

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=33A@TC=25℃ ·DrainSourceVoltage- :VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=23mΩ(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·Designedforuseinswitchmod

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

FDP603AL

N-ChannelLogicLevelEnhancementModeFieldEffectTransistor

GeneralDescription TheseN-ChannellogiclevelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocessisespeciallytailoredtominimizeon-stateresistance.Thesedevicesareparticularlysuit

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FDP603AL

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=33A@TC=25℃ ·DrainSourceVoltage- :VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=22mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconv

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

FG603

6.0AmpMINIATUREPLASTICSILICONRECTIFIERSLOWCOSTLOWLEAKAGE

FCIFirst Components International

戈采戈采企業(yè)股份有限公司

FGM603

SelectionGuide

SANKENIGBT FGT313,FGT312,FGT412,FGT612,FGM622S,FGM603,FGM623S,MGD623N,MGD623S

SankenSanken electric

三墾三墾電氣株式會社

FR603

FASTRECOVERYRECTIFIER

ReverseVoltage-50to1000Volts ForwardCurrent-6.0Amperes Features ●PlasticpackagehasUnderwritersLaboratory FlammabilityClassification94V-0 ●Fastswitchingforhighefficiency ●Constructionutilizesvoid-freemoldedplastictechnique ●6.0ampereoperationatTA=75withn

Good-Ark

GOOD-ARK Electronics

FR603

6.0AMPFASTRECOVERYRECTIFIERS

Features ?Axialleadtypedevicesforthroughholedesign. ?Highcurrentcapability. ?Fastswitchingforhighefficiency. ?Highsurgecapability. ?Siliconrubbercoatingchipjunction. ?Lead-freepartsmeetRoHSrequirments. ?Suffix-HindicatesHalogen-freeparts,ex.FR601-H.

FORMOSAFormosa MS

美麗微半導體美麗微半導體股份有限公司

FR603

6.0AMPFASTRECOVERYRECTIFIERS

VOLTAGERANGE50TO1000VoltsCURRENT6.0Amperes FEATURES *Lowforwardvoltagedrop *Highcurrentcapability *Highreliability *Highsurgecurrentcapability

BYTES

Bytes

詳細參數(shù)

  • 型號：

    FDB603AL

  • 功能描述：

    MOSFET

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應商型號品牌批號封裝庫存備注價格
onsemi(安森美)
24+
TO-263AB
8357
支持大陸交貨,美金交易。原裝現(xiàn)貨庫存。
 詢價
FAIRCHIL
24+
TO-263
800
詢價
FAIRCHIL
23+
TO-263
2870
絕對全新原裝!現(xiàn)貨!特價!請放心訂購!
 詢價
FAIRCHILD
24+/25+
852
原裝正品現(xiàn)貨庫存價優(yōu)
 詢價
原廠
23+
TO263
5000
原裝正品,假一罰十
 詢價
FSC
24+
TO-252
1068
原裝現(xiàn)貨假一罰十
 詢價
FAIRCHIL
2017+
TO-263
6523
只做原裝正品!現(xiàn)貨或訂貨!
 詢價
FSC
2016+
TO-263
2500
只做原裝,假一罰十,公司可開17%增值稅發(fā)票!
 詢價
F
24+
TO-263AB
5000
只做原裝公司現(xiàn)貨
 詢價
FAIRCHILD
23+
NA
19960
只做進口原裝,終端工廠免費送樣
 詢價
更多FDB603AL供應商 更新時間2025-5-4 16:12:00

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