首頁 >EVB-LAN9220-MINI>規(guī)格書列表
零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
EVB-LAN9220-MINI | 包裝:散裝 功能:以太網(wǎng)控制器(PHY 和 MAC) 類別:開發(fā)板,套件,編程器 評估和演示板及套件 描述:EVAL BOARD LAN9220-MINI | MicrochipMicrochip Technology 微芯科技微芯科技股份有限公司 | Microchip | |
PChannelPowerMOSFET | GSG Gunter Seniconductor GmbH. | GSG | ||
FrequencySynthesizer | SHOULDERShoulder 好達電子無錫市好達電子股份有限公司 | SHOULDER | ||
built-inMOS,Y,9Aconverter ComingSoon. Ifyouhavesomeinformationonrelatedparts,pleaseshareusefulinformationbyaddinglinksbelow. | HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 華之美半導體深圳市華之美半導體有限公司 | HMSEMI | ||
ProgrammableRambusTMXDRTMClockGenerator | IDT Integrated Device Technology, Inc. | IDT | ||
ProgrammableRambusTMXDRTMClockGenerator | IDT Integrated Device Technology, Inc. | IDT | ||
PowerMOSFET DESCRIPTION ThirdPowerMOSFETstechnologyisthekeytoVishayadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFETsdesignachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDPAKis | VishayVishay Siliconix 威世科技威世科技半導體 | Vishay | ||
DynamicdV/dtRating DESCRIPTION ThirdPowerMOSFETstechnologyisthekeytoVishayadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFETsdesignachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDPAKis | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
PowerMOSFET DESCRIPTION ThirdPowerMOSFETstechnologyisthekeytoVishayadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFETsdesignachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDPAKis | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
0.6A,200V,1.500Ohm,P-ChannelPowerMOSFET ThisP-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchasswitching | Intersil Intersil Corporation | Intersil | ||
PowerMOSFET(Vdss=-200V,Rds(on)=1.5ohm,Id=-0.56A) HEXFETPowerMOSFET ●DynamicdV/dtRating ●RepetitiveAvalancheRated ●ForAutomaticInsertion ●EndStackable ●P-Channel ●FastSwitching ●EaseofParalleling | IRF International Rectifier | IRF | ||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. The4pinDIPpackageisalowcostmachine-insertablecasestylewhichcanbestackedinmultiplecombinat | VishayVishay Siliconix 威世科技威世科技半導體 | Vishay | ||
HEXFETPowerMOSFET HEXFETPowerMOSFET ●DynamicdV/dtRating ●RepetitiveAvalancheRated ●ForAutomaticInsertion ●EndStackable ●P-Channel ●FastSwitching ●EaseofParalleling ●Lead-Free | IRF International Rectifier | IRF | ||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. The4pinDIPpackageisalowcostmachine-insertablecasestylewhichcanbestackedinmultiplecombinat | VishayVishay Siliconix 威世科技威世科技半導體 | Vishay | ||
REPETITIVEAVALANCHEANDdv/dtRATEDHEXFETTRANSISTORSSURFACEMOUNT(LCC-18) Theleadlesschipcarrier(LCC)packagerepresentsthelogicalnextstepinthecontinualevolutionofsurfacemounttechnology.DesingedtobeaclosereplacementfortheTO-39package,theLCCwillgivedesignerstheextraflexibilitytheyneedtoincreasecircuitboarddensity.InternationalRe | IRF International Rectifier | IRF | ||
SimpleDriveRequirements | IRF International Rectifier | IRF | ||
P-ChannelMOSFETinaHermeticallysealedTO39 | SEME-LAB Seme LAB | SEME-LAB | ||
-2.5A,-200V,1.5Ohm,P-ChannelPowerMOSFETs -2.5A,-200V,1.5Ohm,P-ChannelPowerMOSFETs TheseareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.TheyareP-Channelenhancementmodesilicongatepowerfieldeffecttransistorsdesignedforappl | Intersil Intersil Corporation | Intersil | ||
REPETITIVEAVALANCHEANDdv/dtRATEDHEXFET??RANSISTORSTHRU-HOLE(TO-205AF) TheHEXFET?technologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowon-stateresistancecombinedwithhightransconductance. Features: ■RepetitiveAvala | IRF International Rectifier | IRF | ||
HEXFETTRANSISTORSTHRU-HOLE(TO-205AF) TheHEXFET?technologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowon-stateresistancecombinedwithhightransconductance. Features: ■RepetitiveAvala | IRF International Rectifier | IRF |
產(chǎn)品屬性
- 產(chǎn)品編號:
EVB-LAN9220-MINI
- 制造商:
Microchip Technology
- 類別:
開發(fā)板,套件,編程器 > 評估和演示板及套件
- 包裝:
散裝
- 類型:
接口
- 功能:
以太網(wǎng)控制器(PHY 和 MAC)
- 使用的 IC/零件:
LAN9220
- 所含物品:
板
- 描述:
EVAL BOARD LAN9220-MINI
供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
Microchip |
22+ |
NA |
1899 |
加我QQ或微信咨詢更多詳細信息, |
詢價 | ||
MICROCHIP |
23+ |
7300 |
專注配單,只做原裝進口現(xiàn)貨 |
詢價 | |||
MICROCHIP |
23+ |
7300 |
專注配單,只做原裝進口現(xiàn)貨 |
詢價 | |||
Microchip |
1940+ |
N/A |
369 |
加我qq或微信,了解更多詳細信息,體驗一站式購物 |
詢價 | ||
MICROCHIP/微芯 |
20+ |
SMD |
880000 |
明嘉萊只做原裝正品現(xiàn)貨 |
詢價 | ||
Microchip |
21+ |
15000 |
只做原裝 |
詢價 | |||
Microchip Technology |
2022+ |
原廠原包裝 |
6800 |
全新原裝 支持表配單 中國著名電子元器件獨立分銷 |
詢價 | ||
microchipdirect |
23+ |
15423 |
原包裝原標現(xiàn)貨,假一罰十, |
詢價 | |||
Microchip |
27 |
只做正品 |
詢價 | ||||
24+ |
N/A |
82000 |
一級代理-主營優(yōu)勢-實惠價格-不悔選擇 |
詢價 |
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