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F1129MBEVB

50Ω SE-In – 100Ω DIFF-Out Amplifier 3.0GHz to 4.2GHz

Features RFrange:3.0GHzto4.2GHz Gain=19dBat3.55GHz Noisefigure=1.8dBat3.55GHz OIP3=+32dBmat3.55GHz OutputP1dB=+18dBmat3.55GHz Gainvariationovertemperature=±0.15dBtypical 50Ωsingle-endedinputimpedances 100Ωdifferentialoutputimpedances 3.3Vor5Vp

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

F1129MBEVB

包裝:盒 類別:開發(fā)板,套件,編程器 射頻評估和開發(fā)套件,開發(fā)板 描述:BOARD

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

F1129MBNELI

50ΩSE-In–100ΩDIFF-OutAmplifier3.0GHzto4.2GHz

Features RFrange:3.0GHzto4.2GHz Gain=19dBat3.55GHz Noisefigure=1.8dBat3.55GHz OIP3=+32dBmat3.55GHz OutputP1dB=+18dBmat3.55GHz Gainvariationovertemperature=±0.15dBtypical 50Ωsingle-endedinputimpedances 100Ωdifferentialoutputimpedances 3.3Vor5Vp

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

GP1129

U.S.ELECTRICALDIVISIONMANCHESTER,NH03108

etc2List of Unclassifed Manufacturers

etc未分類制造商etc2未分類制造商

HAT1129R

P-ChannelMOSFETusesadvancedtrenchtechnology

DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD

杜因特深圳市杜因特半導(dǎo)體有限公司

HTT1129E

SiliconNPNEpitaxialTwinTransistor

Features ?Include2transistorsinasmallsizeSMDpackage:EMFPAK–6(6Leads:1.2x0.8x0.5mm)

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

HTT1129EZTL-E

SiliconNPNEpitaxialTwinTransistor

Features ?Include2transistorsinasmallsizeSMDpackage:EMFPAK–6(6Leads:1.2x0.8x0.5mm)

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

ISF1129

N-ChannelPowerMOSFET

DESCRIPTION ·AvalancheRated ·DrainSourceVoltage- :VDSS=900V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=230mΩ(Max)@VGS=10V ·100%avalanchetested APPLICATIONS ·HighPowerDensity ·EasytoMount ·SpaceSavings

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

LT1129

3A,5A,7.5ALowDropoutPositiveFixedRegulators

Features -Three-Terminal3.3V,3.6V,5Vand12V -OutputCurrentof3A,5Aor7.5A -OperatesDownto1VDropout -GuaranteedDropoutVoltageatMultipleCurrentLevels -LineRegulation:0.015 -LoadRegulation:0.1 -100ThermalLimitFunctionalTest -AdjustableVersionsAvailable

LINERLinear Technology

凌力爾特凌特半導(dǎo)體

LT1129

LowDropoutNegativeMicropowerRegulatorinThinSOT

LINERLinear Technology

凌力爾特凌特半導(dǎo)體

LT1129

MicropowerLowDropoutRegulatorswithShutdown

LINEAR

Linear Integrated Systems

LT1129

100mA,LowVoltage,VeryLowDropoutLinearRegulator

LINERLinear Technology

凌力爾特凌特半導(dǎo)體

LT1129

400mVDropoutVoltage

LINERLinear Technology

凌力爾特凌特半導(dǎo)體

LT1129

500mA,LowVoltage,VeryLowDropoutLinearRegulator

LINEAR_DIMENSIONS

Linear Dimensions Semiconductor

LT1129

250mA,4Vto80VLowDropoutMicropowerLinearRegulatorwithPWRGD

LINERLinear Technology

凌力爾特凌特半導(dǎo)體

LT1129

1.1A,LowNoise,LowDropoutLinearRegulator

LINERLinear Technology

凌力爾特凌特半導(dǎo)體

LT1129

MicropowerLowDropoutRegulatorswithShutdown

LINERLinear Technology

凌力爾特凌特半導(dǎo)體

LT1129CQ

MicropowerLowDropoutRegulatorswithShutdown

LINERLinear Technology

凌力爾特凌特半導(dǎo)體

LT1129CQ

MicropowerLowDropoutRegulatorswithShutdown

LINERLinear Technology

凌力爾特凌特半導(dǎo)體

LT1129CQ

400mVDropoutVoltage

LINERLinear Technology

凌力爾特凌特半導(dǎo)體

產(chǎn)品屬性

  • 產(chǎn)品編號:

    F1129MBEVB

  • 制造商:

    Renesas Electronics America Inc

  • 類別:

    開發(fā)板,套件,編程器 > 射頻評估和開發(fā)套件,開發(fā)板

  • 包裝:

  • 類型:

    放大器

  • 頻率:

    3GHz ~ 4.2GHz

  • 配套使用/相關(guān)產(chǎn)品:

    F1129MB

  • 所含物品:

  • 描述:

    BOARD

供應(yīng)商型號品牌批號封裝庫存備注價格
24+
N/A
69000
一級代理-主營優(yōu)勢-實惠價格-不悔選擇
詢價
RENESAS(瑞薩)/IDT
2117+
VFQFPN-12(2x2)
315000
nan一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單
詢價
RENESAS(瑞薩)/IDT
2021+
VFQFPN-12(2x2)
499
詢價
RENESAS瑞薩/IDT
23+
VFQFPN-12(2x2)
10000
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種
詢價
RENESAS
23+
NA
1991
射頻放大器
詢價
RENESAS(瑞薩)/IDT
23+
QFN12EP(2x2)
7350
現(xiàn)貨供應(yīng),當(dāng)天可交貨!免費(fèi)送樣,原廠技術(shù)支持!!!
詢價
RENESAS(瑞薩)/IDT
23+
QFN12EP(2x2)
6000
誠信服務(wù),絕對原裝原盤
詢價
Renesas Electronics Corporatio
24+
12-WFQFN 裸露焊盤
9350
獨(dú)立分銷商 公司只做原裝 誠心經(jīng)營 免費(fèi)試樣正品保證
詢價
SIPEX
23+
SOT-23-3
12735
詢價
MICREL
1742+
SOT23-6
98215
只要網(wǎng)上有絕對有貨!只做原裝正品!
詢價
更多F1129MBEVB供應(yīng)商 更新時間2024-11-16 11:06:00