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F2006ERW

Low Cost, Compact 20W, 2:1 Input Range DC/DC Converters

KeyFeatures: ?20WOutputPower ?2:1InputVoltageRange ?1,500VDCIsolation ?Single&DualOutputs ?Efficiencyto86 ?Compact1.6x2In.Case ?-40°Cto+71°COperation ?IndustryStandardPin-Out ?LowestCost!!

MPD

MPD (Memory Protection Devices)

F2007ERW

Low Cost, Compact 20W, 2:1 Input Range DC/DC Converters

KeyFeatures: ?20WOutputPower ?2:1InputVoltageRange ?1,500VDCIsolation ?Single&DualOutputs ?Efficiencyto86 ?Compact1.6x2In.Case ?-40°Cto+71°COperation ?IndustryStandardPin-Out ?LowestCost!!

MPD

MPD (Memory Protection Devices)

F2008ERW

Low Cost, Compact 20W, 2:1 Input Range DC/DC Converters

KeyFeatures: ?20WOutputPower ?2:1InputVoltageRange ?1,500VDCIsolation ?Single&DualOutputs ?Efficiencyto86 ?Compact1.6x2In.Case ?-40°Cto+71°COperation ?IndustryStandardPin-Out ?LowestCost!!

MPD

MPD (Memory Protection Devices)

F2009ERW

Low Cost, Compact 20W, 2:1 Input Range DC/DC Converters

KeyFeatures: ?20WOutputPower ?2:1InputVoltageRange ?1,500VDCIsolation ?Single&DualOutputs ?Efficiencyto86 ?Compact1.6x2In.Case ?-40°Cto+71°COperation ?IndustryStandardPin-Out ?LowestCost!!

MPD

MPD (Memory Protection Devices)

F2011ERW

Low Cost, Compact 20W, 2:1 Input Range DC/DC Converters

KeyFeatures: ?20WOutputPower ?2:1InputVoltageRange ?1,500VDCIsolation ?Single&DualOutputs ?Efficiencyto86 ?Compact1.6x2In.Case ?-40°Cto+71°COperation ?IndustryStandardPin-Out ?LowestCost!!

MPD

MPD (Memory Protection Devices)

F2012

PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR?

GeneralDescription SiliconVDMOSandLDMOStransistorsdesignedspecificallyforbroadbandRFapplications.SuitableforMilitaryRadios,CellularandPagingAmplifierBaseStations,BroadcastFM/AM,MRI,LaserDriverandothers.PolyfetTMrocessfeaturesgoldmetalforgreatlyextendedlifetim

Polyfet

Polyfet RF Devices

F2012ERW

Low Cost, Compact 20W, 2:1 Input Range DC/DC Converters

KeyFeatures: ?20WOutputPower ?2:1InputVoltageRange ?1,500VDCIsolation ?Single&DualOutputs ?Efficiencyto86 ?Compact1.6x2In.Case ?-40°Cto+71°COperation ?IndustryStandardPin-Out ?LowestCost!!

MPD

MPD (Memory Protection Devices)

F2013

PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR?

GeneralDescription SiliconVDMOSandLDMOStransistorsdesignedspecificallyforbroadbandRFapplications.SuitableforMilitaryRadios,CellularandPagingAmplifierBaseStations,BroadcastFM/AM,MRI,LaserDriverandothers. Polyfetprocessfeaturesgoldmetalforgreatlyextendedlifetime

Polyfet

Polyfet RF Devices

F2013ERW

Low Cost, Compact 20W, 2:1 Input Range DC/DC Converters

KeyFeatures: ?20WOutputPower ?2:1InputVoltageRange ?1,500VDCIsolation ?Single&DualOutputs ?Efficiencyto86 ?Compact1.6x2In.Case ?-40°Cto+71°COperation ?IndustryStandardPin-Out ?LowestCost!!

MPD

MPD (Memory Protection Devices)

F2014ERW

Low Cost, Compact 20W, 2:1 Input Range DC/DC Converters

KeyFeatures: ?20WOutputPower ?2:1InputVoltageRange ?1,500VDCIsolation ?Single&DualOutputs ?Efficiencyto86 ?Compact1.6x2In.Case ?-40°Cto+71°COperation ?IndustryStandardPin-Out ?LowestCost!!

MPD

MPD (Memory Protection Devices)

產(chǎn)品屬性

  • 產(chǎn)品編號:

    F20

  • 制造商:

    Semtech Corporation

  • 類別:

    分立半導(dǎo)體產(chǎn)品 > 二極管 - 整流器 - 單

  • 包裝:

    散裝

  • 二極管類型:

    標(biāo)準(zhǔn)

  • 電流 - 平均整流 (Io):

    350mA

  • 速度:

    快速恢復(fù) =< 500ns,> 200mA(Io)

  • 不同?Vr、F 時電容:

    2.5pF @ 5V,1MHz

  • 安裝類型:

    通孔

  • 封裝/外殼:

    軸向

  • 供應(yīng)商器件封裝:

    軸向

  • 工作溫度 - 結(jié):

    -65°C ~ 175°C

  • 描述:

    DIODE GEN PURP 2KV 350MA AXIAL

供應(yīng)商型號品牌批號封裝庫存備注價格
羅姆
24+
TO-92S
5400
詢價
SEMTECH
1724+
DMET100MAFAST2KV
5800
只做原裝進口,假一罰十
詢價
全志
24+
FBGA-400
600
“芯達集團”專營軍工百分之百原裝進口
詢價
ALLWINNER
25+23+
BGA
41067
絕對原裝正品現(xiàn)貨,全新深圳原裝進口現(xiàn)貨
詢價
ALLWINN
17+
BGA
60000
保證進口原裝可開17%增值稅發(fā)票
詢價
ALLWINN
1836+
BGA
9852
只做原裝正品現(xiàn)貨!或訂貨假一賠十!
詢價
ALLWINNER
22+
BGA
20000
原裝正品現(xiàn)貨
詢價
XP Power
24+
N/A
12000
一級代理保證進口原裝正品假一罰十價格合理
詢價
ALLWINNER/全志
24+
BGA
70000
ALLWINNE原廠支持只做自己現(xiàn)貨
詢價
24+
BGA
35200
一級代理/放心采購
詢價
更多F20供應(yīng)商 更新時間2025-4-7 16:30:00