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STB22NM60	文件：344.6 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=22A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.25Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
STB22NM60	文件：386.59 Kbytes Page：11 Pages	N-CHANNEL600V-0.19ohm-22ATO-220/FP/D2PAK/I2PAK/TO-247MDmesh??owerMOSFET DESCRIPTION ThisimprovedversionofMDmesh?whichisbasedonMultipleDrainprocessrepresentsthenewbenchmarkinhighvoltageMOSFETs.Theresultingproductexhibitsevenloweron-resistance,impressivelyhighdv/dtandexcellentavalanchecharacteristics.TheadoptionoftheCompany’spropr	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán)	STMICROELECTRONICS
STB22NM60N	文件：278.31 Kbytes Page：2 Pages	IscN-ChannelMOSFETTransistor	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
STB22NM60N	文件：994.47 Kbytes Page：23 Pages	N-channel600V,0.2廓,16AMDmesh??IIPowerMOSFET Description ThesedevicesaremadeusingthesecondgenerationofMDmesh?technology.ThisrevolutionaryPowerMOSFETassociatesanewverticalstructuretothecompany’sstriplayouttoyieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuitableforthemostdemanding	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán)	STMICROELECTRONICS
STF22NM60	文件：318.81 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=22A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.25Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
STF22NM60	文件：386.59 Kbytes Page：11 Pages	N-CHANNEL600V-0.19ohm-22ATO-220/FP/D2PAK/I2PAK/TO-247MDmesh??owerMOSFET DESCRIPTION ThisimprovedversionofMDmesh?whichisbasedonMultipleDrainprocessrepresentsthenewbenchmarkinhighvoltageMOSFETs.Theresultingproductexhibitsevenloweron-resistance,impressivelyhighdv/dtandexcellentavalanchecharacteristics.TheadoptionoftheCompany’spropr	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán)	STMICROELECTRONICS
STF22NM60N	文件：1.15843 Mbytes Page：11 Pages	N-Channel650-V(D-S)SuperJunctionMOSFET	VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司	VBSEMI
STF22NM60N	文件：290.86 Kbytes Page：2 Pages	IscN-ChannelMOSFETTransistor	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
STF22NM60N	文件：994.47 Kbytes Page：23 Pages	N-channel600V,0.2廓,16AMDmesh??IIPowerMOSFET Description ThesedevicesaremadeusingthesecondgenerationofMDmesh?technology.ThisrevolutionaryPowerMOSFETassociatesanewverticalstructuretothecompany’sstriplayouttoyieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuitableforthemostdemanding	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán)	STMICROELECTRONICS
STF22NM60ND	文件：790.51 Kbytes Page：13 Pages	Automotive-gradeN-channel600V,0.17??typ.,17AFDmesh??IIPowerMOSFETinaTO-220FPpackage Description ThisFDmesh?IIPowerMOSFETwithfastrecoverybodydiodeisproducedusingMDmesh?IItechnology.Utilizinganewstriplayoutverticalstructure,thisdevicefeatureslowon-resistanceandsuperiorswitchingperformance.ItisidealforbridgetopologiesandZVSphase-shiftconverter	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán)	STMICROELECTRONICS
STI22NM60	文件：280.64 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=22A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.25Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
STI22NM60N	文件：338.16 Kbytes Page：2 Pages	IscN-ChannelMOSFETTransistor	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
STI22NM60N	文件：994.47 Kbytes Page：23 Pages	N-channel600V,0.2廓,16AMDmesh??IIPowerMOSFET Description ThesedevicesaremadeusingthesecondgenerationofMDmesh?technology.ThisrevolutionaryPowerMOSFETassociatesanewverticalstructuretothecompany’sstriplayouttoyieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuitableforthemostdemanding	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán)	STMICROELECTRONICS
STP22NM60	文件：371.98 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=22A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.25Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
STP22NM60	文件：386.59 Kbytes Page：11 Pages	N-CHANNEL600V-0.19ohm-22ATO-220/FP/D2PAK/I2PAK/TO-247MDmesh??owerMOSFET DESCRIPTION ThisimprovedversionofMDmesh?whichisbasedonMultipleDrainprocessrepresentsthenewbenchmarkinhighvoltageMOSFETs.Theresultingproductexhibitsevenloweron-resistance,impressivelyhighdv/dtandexcellentavalanchecharacteristics.TheadoptionoftheCompany’spropr	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán)	STMICROELECTRONICS
STP22NM60N	文件：316.99 Kbytes Page：2 Pages	IscN-ChannelMOSFETTransistor ?FEATURES ?Lowinputcapacitanceandgatecharge ?Lowgateinputresistances ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation ?APPLICATIONS ?Switchingapplications	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
STP22NM60N	文件：994.47 Kbytes Page：23 Pages	N-channel600V,0.2廓,16AMDmesh??IIPowerMOSFET Description ThesedevicesaremadeusingthesecondgenerationofMDmesh?technology.ThisrevolutionaryPowerMOSFETassociatesanewverticalstructuretothecompany’sstriplayouttoyieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuitableforthemostdemanding	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán)	STMICROELECTRONICS
STW22NM60	文件：350.87 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=22A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.25Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
STW22NM60	文件：386.59 Kbytes Page：11 Pages	N-CHANNEL600V-0.19ohm-22ATO-220/FP/D2PAK/I2PAK/TO-247MDmesh??owerMOSFET DESCRIPTION ThisimprovedversionofMDmesh?whichisbasedonMultipleDrainprocessrepresentsthenewbenchmarkinhighvoltageMOSFETs.Theresultingproductexhibitsevenloweron-resistance,impressivelyhighdv/dtandexcellentavalanchecharacteristics.TheadoptionoftheCompany’spropr	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán)	STMICROELECTRONICS
STW22NM60N	文件：377.93 Kbytes Page：2 Pages	IscN-ChannelMOSFETTransistor	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC

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供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫(kù)存	備注	價(jià)格
深圳市恒創(chuàng)達(dá)實(shí)業(yè)有限公司	F22NM60	ST/進(jìn)口原	17+	TO-220F	6200		詢價(jià)
中天科工半導(dǎo)體（深圳）有限公司	F22NM60	ST	20+	TO-220F	38560	原裝優(yōu)勢(shì)主營(yíng)型號(hào)-可開原型號(hào)增稅票	詢價(jià)
深圳市國(guó)宇半導(dǎo)體科技有限公司	F22NM60	S	23+	TO-220FP	10000	公司只做原裝正品	詢價(jià)
深圳市威爾健半導(dǎo)體有限公司	F22NM60	ST/意法	23+	TO-220F	50000	全新原裝正品現(xiàn)貨,支持訂貨	詢價(jià)
深圳市安富世紀(jì)電子有限公司	F22NM60	ST	23+	TO-220F	50000	全新原裝正品現(xiàn)貨,支持訂貨	詢價(jià)
深圳市河鋒鑫科技有限公司	F22NM60	S	22+	TO-220FP	6000	十年配單,只做原裝	詢價(jià)
深圳市威雅利發(fā)展有限公司	F22NM60	ST	11+	TO-220F	50	一級(jí)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力	詢價(jià)
深圳市匯萊威科技有限公司	F22NM60	ST			589220	16余年資質(zhì) 絕對(duì)原盒原盤更多數(shù)量	詢價(jià)
深圳市星佑電子有限公司	F22NM60	ST	22+	TO-220F	16900	支持樣品原裝現(xiàn)貨提供技術(shù)支持!	詢價(jià)
深圳市得捷芯城科技有限公司	F22NM60	ST/意法	23+	NA/	3300	原裝現(xiàn)貨,當(dāng)天可交貨,原型號(hào)開票	詢價(jià)

更多F22NM60供應(yīng)商更新時(shí)間2025-1-13 16:00:00

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