零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
1AsynchronousmobilepowerIC | FUMANFine Made Microelectronics Group Co.,Ltd. 富滿微富滿微電子集團股份有限公司 | FUMAN | ||
1AsynchronousmobilepowerIC | FUMANFine Made Microelectronics Group Co.,Ltd. 富滿微富滿微電子集團股份有限公司 | FUMAN | ||
HERMETICALLYSEALEDLATCHINGRELAY | HONGFAHongfa Technology 宏發(fā)電聲廈門宏發(fā)電聲股份有限公司 | HONGFA | ||
PowerMOSFET | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
SEMICONDUCTORS | etc2List of Unclassifed Manufacturers etc未分類制造商etc2未分類制造商 | etc2 | ||
PowerMOSFET | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
PowerMOSFET(Vdss=-200V,Rds(on)=3.0ohm,Id=-1.8A) Description TheHEXFETtechnologyisthekeytointernationalRectifiersadvancedlineofpowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingoftheHEXFETdesignachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. ?Dynamic | IRF International Rectifier | IRF | ||
PowerMOSFET DESCRIPTION ThePowerMOSFETstechnologyisthekeytoVishay’sadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFETsdesignachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheTO-220p | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
iscP-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=-1.8A@TC=25℃ ·DrainSourceVoltage-VDSS=-200V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=3Ω(Max)@VGS=-10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
PowerMOSFET DESCRIPTION ThePowerMOSFETstechnologyisthekeytoVishay’sadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFETsdesignachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheTO-220p | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
HEXFETPOWERMOSFET(VDSS=-200V,RDS(on)=3.0廓,ID=-1.8A) | IRF International Rectifier | IRF | ||
PowerMOSFET | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
AvailableinTapeandReel DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD2PAK(TO-263)isasurfacemountpowerpackagecapableofaccommodatingdiesizesuptoHEX-4.Itprov | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
PowerMOSFET(Vdss=-200V,Rds(on)=3.0ohm,Id=-1.8A) Description TheHEXFETtechnologyisthekeytointernationalRectifiersadvancedlineofpowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingoftheHEXFETdesignachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. ?Surface | IRF International Rectifier | IRF | ||
PowerMOSFET FEATURES ?Surface-mount ?Availableintapeandreel ?DynamicdV/dtrating ?P-channel ?Fastswitching ?Easeofparalleling ?Simpledriverequirements ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovidesinforma | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
PowerMOSFET FEATURES ?Surface-mount ?Availableintapeandreel ?DynamicdV/dtrating ?P-channel ?Fastswitching ?Easeofparalleling ?Simpledriverequirements ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovidesinforma | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
PowerMOSFET FEATURES ?Surface-mount ?Availableintapeandreel ?DynamicdV/dtrating ?P-channel ?Fastswitching ?Easeofparalleling ?Simpledriverequirements ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovidesinforma | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
PowerMOSFET FEATURES ?Surface-mount ?Availableintapeandreel ?DynamicdV/dtrating ?P-channel ?Fastswitching ?Easeofparalleling ?Simpledriverequirements ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovidesinforma | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
HEXFETPOWERMOSFET | IRF International Rectifier | IRF | ||
PowerMOSFET | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay |
詳細(xì)參數(shù)
- 型號:
F9610G
- 制造商:
TE Connectivity
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
IR |
22+ |
TO-263 |
6000 |
終端可免費供樣,支持BOM配單 |
詢價 | ||
IR |
23+ |
TO-263 |
8000 |
專注配單,只做原裝進口現(xiàn)貨 |
詢價 | ||
IR |
23+ |
TO-263 |
8000 |
只做原裝現(xiàn)貨 |
詢價 | ||
IR |
23+ |
TO-263 |
7000 |
詢價 | |||
F |
22+ |
CQFP |
6521 |
只做原裝正品現(xiàn)貨!或訂貨假一賠十! |
詢價 | ||
FSC |
23+ |
CDIP |
1075 |
專業(yè)優(yōu)勢供應(yīng) |
詢價 | ||
24+ |
CDIP |
428 |
詢價 | ||||
FSC |
22+ |
CDIP16 |
5000 |
進口原裝!現(xiàn)貨庫存 |
詢價 | ||
FAIRCHILD/仙童 |
22+ |
DIP |
12245 |
現(xiàn)貨,原廠原裝假一罰十! |
詢價 | ||
FAIRCHILD/仙童 |
22+ |
DIP |
11190 |
原裝正品 |
詢價 |
相關(guān)規(guī)格書
更多- F9621G
- F96303-000
- F964000
- F965000-B
- F-966-10
- F-966-14
- F96650-000
- F96674-000
- F96680-000
- F-967-14
- F-969-12
- F96D2-5M1Y
- F96D2-5M3Y
- F96D2-NM1Y
- F9700A
- F-970-34
- F97070-000
- F970G106MBA
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- F970J336KAA
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- F970J685MBA
- F970J686MNC
- F97157-000
- F97190-000
- F971A106KAA
- F971A106MAA
- F971A155MAA
相關(guān)庫存
更多- F96223-000
- F96395-000
- F965000
- F-9653
- F-966-12
- F-966-38
- F-966-56
- F-966-76
- F-967-10
- F-967-56
- F96D2-5M10Y
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- F96D2-NM10Y
- F97005-000
- F97-017-230-AGGAA
- F97061-000
- F97088-000
- F970G107MNC
- F970G157MNC
- F970G335MAA
- F970G475MAA
- F970G685MAA
- F970G686MNC
- F970J107KNC
- F970J107MNC
- F970J156MBA
- F970J226KBA
- F970J226MBA
- F970J226MCC
- F970J335MAA_09
- F970J336KCC
- F970J336MCA
- F970J475MAA
- F970J476KCC
- F970J476MCA
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- F970J685KAA
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- F970J686MNA
- F97139-000
- F97164-000
- F97197-000
- F971A106KBA
- F971A106MBA
- F971A156MCC