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IRF9610

Power MOSFET(Vdss=-200V, Rds(on)=3.0ohm, Id=-1.8A)

Description TheHEXFETtechnologyisthekeytointernationalRectifiersadvancedlineofpowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingoftheHEXFETdesignachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. ?Dynamic

IRF

International Rectifier

IRF9610

Power MOSFET

DESCRIPTION ThePowerMOSFETstechnologyisthekeytoVishay’sadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFETsdesignachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheTO-220p

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF9610

isc P-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=-1.8A@TC=25℃ ·DrainSourceVoltage-VDSS=-200V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=3Ω(Max)@VGS=-10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IRF9610

Power MOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF9610

SEMICONDUCTORS

etc2List of Unclassifed Manufacturers

etc未分類(lèi)制造商etc2未分類(lèi)制造商

IRF9610

Power MOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF9610PBF

Power MOSFET

DESCRIPTION ThePowerMOSFETstechnologyisthekeytoVishay’sadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFETsdesignachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheTO-220p

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF9610S

Power MOSFET(Vdss=-200V, Rds(on)=3.0ohm, Id=-1.8A)

Description TheHEXFETtechnologyisthekeytointernationalRectifiersadvancedlineofpowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingoftheHEXFETdesignachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. ?Surface

IRF

International Rectifier

IRF9610S

Available in Tape and Reel

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD2PAK(TO-263)isasurfacemountpowerpackagecapableofaccommodatingdiesizesuptoHEX-4.Itprov

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF9610S

Power MOSFET

FEATURES ?Surface-mount ?Availableintapeandreel ?DynamicdV/dtrating ?P-channel ?Fastswitching ?Easeofparalleling ?Simpledriverequirements ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovidesinforma

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

詳細(xì)參數(shù)

  • 型號(hào)：

    IRF9610

  • 功能描述：

    MOSFET P-Chan 200V 1.8 Amp

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
IR
23+
TO-220
19526
詢(xún)價(jià)
SEC
15
原裝正品現(xiàn)貨庫(kù)存價(jià)優(yōu)
 詢(xún)價(jià)
IR
2015+
TO-220
19889
一級(jí)代理原裝現(xiàn)貨,特價(jià)熱賣(mài)!
 詢(xún)價(jià)
IR
24+
原廠(chǎng)封裝
2000
原裝現(xiàn)貨假一罰十
 詢(xún)價(jià)
IR
15+
TO-220
11560
全新原裝,現(xiàn)貨庫(kù)存,長(zhǎng)期供應(yīng)
 詢(xún)價(jià)
IR
23+
TO-220AB
8600
全新原裝現(xiàn)貨
 詢(xún)價(jià)
IR
23+
TO
5000
原裝正品,假一罰十
 詢(xún)價(jià)
IR
16+
TO-220
10000
全新原裝現(xiàn)貨
 詢(xún)價(jià)
IRF
23+
NA
19960
只做進(jìn)口原裝,終端工廠(chǎng)免費(fèi)送樣
 詢(xún)價(jià)
IR/VISHAY
19+
TO-220
74795
原廠(chǎng)代理渠道,每一顆芯片都可追溯原廠(chǎng)；
 詢(xún)價(jià)
更多IRF9610供應(yīng)商 更新時(shí)間2025-2-2 9:00:00

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