首頁 >IRF9Z34NSPBF>規(guī)格書列表

零件編號下載&訂購功能描述制造商&上傳企業(yè)LOGO

IRF9Z34NSPBF

Advanced Process Technology

ComingSoon. Ifyouhavesomeinformationonrelatedparts,pleaseshareusefulinformationbyaddinglinksbelow.

IRF

International Rectifier

IRF9Z34NSPBF_15

ADVANCED PROCESS TECHNOLOGY

IRF

International Rectifier

IRF9Z34NSTRRPBF

AdvancedProcessTechnology

ComingSoon. Ifyouhavesomeinformationonrelatedparts,pleaseshareusefulinformationbyaddinglinksbelow.

IRF

International Rectifier

IRF9Z34PBF

HEXFET?PowerMOSFET

IRF

International Rectifier

IRF9Z34PBF

PowerMOSFETDynamicdV/dtRatingRepetitiveAvalancheRatedP-Channel

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipa

KERSEMI

Kersemi Electronic Co., Ltd.

IRF9Z34PBF

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipa

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF9Z34S

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknownfor,providesthedesignerwit

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF9Z34S

PowerMOSFET(Vdss=-60V,Rds(on)=0.14ohm,Id=-18A)

Description ThirdGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provi

IRF

International Rectifier

IRF9Z34S

PowerMOSFET

FEATURES ?Advancedprocesstechnology ?Surfacemount(IRF9Z34S,SiHF9Z34S) ?175°Coperatingtemperature ?Fastswitching ?P-channel ?Fullyavalancherated ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note? *Thisdatasheetprovidesin

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF9Z34SPBF

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF9Z34SPBF

SurfaceMount

Description ThirdGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provi

IRF

International Rectifier

IRF9Z34SPBF

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknownfor,providesthedesignerwit

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF9Z34STRL

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknownfor,providesthedesignerwit

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF9Z34STRLPBF

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknownfor,providesthedesignerwit

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF9Z34STRLPBFA

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF9Z34STRR

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknownfor,providesthedesignerwit

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF9Z34STRRPBF

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknownfor,providesthedesignerwit

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF9Z34STRRPBFA

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFI9Z34G

HEXFETPOWERMOSFET

IRF

International Rectifier

IRFI9Z34G

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

詳細(xì)參數(shù)

  • 型號:

    IRF9Z34NSPBF

  • 功能描述:

    MOSFET 1 P-CH -55V HEXFET 100mOhms 23.3nC

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

供應(yīng)商型號品牌批號封裝庫存備注價(jià)格
IR
2024+
N/A
70000
柒號只做原裝 現(xiàn)貨價(jià)秒殺全網(wǎng)
詢價(jià)
IR
24+
TO-263
600
詢價(jià)
IR
2016+
TO-263
6528
房間原裝進(jìn)口現(xiàn)貨假一賠十
詢價(jià)
IR
TO-263
800
原裝長期供貨!
詢價(jià)
Infineon
18+
NA
3000
進(jìn)口原裝正品優(yōu)勢供應(yīng)
詢價(jià)
IRF
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
詢價(jià)
IR
23+
TO-263
11846
一級代理商現(xiàn)貨批發(fā),原裝正品,假一罰十
詢價(jià)
International Rectifier
2022+
1
全新原裝 貨期兩周
詢價(jià)
IR
24+
TO-263
800
原裝現(xiàn)貨
詢價(jià)
INTERNATIONALRECTIFIER
2020+
NA
80000
只做自己庫存,全新原裝進(jìn)口正品假一賠百,可開13%增
詢價(jià)
更多IRF9Z34NSPBF供應(yīng)商 更新時(shí)間2025-1-8 13:00:00