首頁(yè) >IRFB3307ZGPBF>規(guī)格書列表
零件編號(hào) | 下載&訂購(gòu) | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
IRFB3307ZGPBF | HEXFETPower MOSFET | IRF International Rectifier | IRF | |
HEXFETPowerMOSFET Benefits ●ImprovedGate,AvalancheandDynamicdv/dtRuggedness ●FullyCharacterizedCapacitanceandAvalancheSOA ●EnhancedbodydiodedV/dtanddI/dtCapability Applications ●HighEfficiencySynchronousRectificationinSMPS ●UninterruptiblePowerSupply ●HighSpeedPowerSwitching | IRF International Rectifier | IRF | ||
HEXFETPowerMOSFET Benefits ?ImprovedGate,AvalancheandDynamicdV/dtRuggedness ?FullyCharacterizedCapacitanceandAvalancheSOA ?EnhancedbodydiodedV/dtanddI/dtCapability Applications ?HighEfficiencySynchronousRectificationinSMPS ?UninterruptiblePowerSupply ?HighSpeed | IRF International Rectifier | IRF | ||
HighEfficiencySynchronousRectificationinSMPS | IRF International Rectifier | IRF | ||
HighEfficiencySynchronousRectificationinSMPS | IRF International Rectifier | IRF | ||
HighEfficiencySynchronousRectificationinSMPS | IRF International Rectifier | IRF | ||
HEXFETPowerMOSFET Benefits ●ImprovedGate,AvalancheandDynamicdv/dtRuggedness ●FullyCharacterizedCapacitanceandAvalancheSOA ●EnhancedbodydiodedV/dtanddI/dtCapability Applications ●HighEfficiencySynchronousRectificationinSMPS ●UninterruptiblePowerSupply ●HighSpeedPowerSwitching | IRF International Rectifier | IRF | ||
HEXFETPowerMOSFET Benefits ?ImprovedGate,AvalancheandDynamicdV/dtRuggedness ?FullyCharacterizedCapacitanceandAvalancheSOA ?EnhancedbodydiodedV/dtanddI/dtCapability Applications ?HighEfficiencySynchronousRectificationinSMPS ?UninterruptiblePowerSupply ?HighSpeed | IRF International Rectifier | IRF | ||
HEXFETPowerMOSFET Benefits ●ImprovedGate,AvalancheandDynamicdv/dtRuggedness ●FullyCharacterizedCapacitanceandAvalancheSOA ●EnhancedbodydiodedV/dtanddI/dtCapability Applications ●HighEfficiencySynchronousRectificationinSMPS ●UninterruptiblePowerSupply ●HighSpeedPowerSwitching | IRF International Rectifier | IRF | ||
1.75ASynchronousStep-DownRegulatorin1.6mm×1mmWLCSP FEATURES -VOUTRange:0.5Vto3.65V -2MHzSwitchingFrequency -LowRippleBurstMode?orForcedContinuous ModeofOperation -HighEfficiency:30mΩNMOS,100mΩPMOS -PeakCurrentModeControl -22nsMinimumOn-Time -WideBandwidth,FastTransientResponse -SafelyToleratesInductor | ADAnalog Devices 亞德諾亞德諾半導(dǎo)體技術(shù)有限公司 | AD | ||
5V,15ASynchronousStep-DownSilentSwitcherin3mm×3mmLQFN FEATURES -LayoutCompatiblewithLTC3310/LTC3311Family -SilentSwitcher?Architecture -UltralowEMIEmissions -HighEfficiency:3mΩNMOSand8mΩPMOS -WideBandwidth,FastTransientResponse -SafelyToleratesInductorSaturationinOverload -VINRange:2.25Vto5.5V -VOUTRange:0 | ADAnalog Devices 亞德諾亞德諾半導(dǎo)體技術(shù)有限公司 | AD | ||
5V,Dual4A/Dual-Phase8AStep-DownDC/DCRegulatorin2.2mm×2.7mmWLCSP FEATURES -Dual4AOutputs -ConfigurableasSingleOutput,2-Phase8ABuck -HighEfficiency:12mΩHigh-Sideand8mΩLow-Side -±1MaximumTotalDCOutputError -WideBandwidth,FastTransientResponse -VINRange:2.25Vto5.5V -VOUTRange:0.5VtoVIN -ProgrammableFrequencyto3MHz | ADAnalog Devices 亞德諾亞德諾半導(dǎo)體技術(shù)有限公司 | AD | ||
5V,2ASynchronousStep-DownRegulatorin2mm×2mmFCQFN FEATURES -HighEfficiency:30mΩNMOS,85mΩPMOS -PeakCurrentModeControl -27nsMinimumOn-Time -WideBandwidth,FastTransientResponse -Low-RippleBurstMode?OperationwithIQof80μA -Upto6MHzOperation -SafelyToleratesInductorSaturationinOverload -VINRange:2.25Vto5 | ADAnalog Devices 亞德諾亞德諾半導(dǎo)體技術(shù)有限公司 | AD | ||
5V,12.5ASynchronousStep-DownSilentSwitcherin3mmx3mmLQFN | ADAnalog Devices 亞德諾亞德諾半導(dǎo)體技術(shù)有限公司 | AD | ||
5V,12.5ASynchronousStep-DownSilentSwitcher2in3mmx3mmLQFN | ADAnalog Devices 亞德諾亞德諾半導(dǎo)體技術(shù)有限公司 | AD | ||
Dual5V,2ASynchronousStep-DownDC/DCsin2mm?2mmLQFN | ADAnalog Devices 亞德諾亞德諾半導(dǎo)體技術(shù)有限公司 | AD | ||
5V,3ASynchronousStep-DownSilentSwitcherin2mmx2mmLQFN | ADAnalog Devices 亞德諾亞德諾半導(dǎo)體技術(shù)有限公司 | AD | ||
5V,Dual6A/Dual-Phase12AStep-DownDC/DCRegulator | ADAnalog Devices 亞德諾亞德諾半導(dǎo)體技術(shù)有限公司 | AD | ||
5V,3ASynchronousStep-DownSilentSwitcherin2mmx2mmLQFN | ADAnalog Devices 亞德諾亞德諾半導(dǎo)體技術(shù)有限公司 | AD | ||
5V,3ASynchronousStep-DownSilentSwitcherin2mmx2mmLQFN | ADAnalog Devices 亞德諾亞德諾半導(dǎo)體技術(shù)有限公司 | AD |
詳細(xì)參數(shù)
- 型號(hào):
IRFB3307ZGPBF
- 功能描述:
MOSFET MOSFT 75V 120A 5.8mOhm 79nC
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶體管極性:
N-Channel
- 汲極/源極擊穿電壓:
650 V
- 閘/源擊穿電壓:
25 V
- 漏極連續(xù)電流:
130 A 電阻汲極/源極
- RDS(導(dǎo)通):
0.014 Ohms
- 配置:
Single
- 安裝風(fēng)格:
Through Hole
- 封裝/箱體:
Max247
- 封裝:
Tube
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
IR |
24+ |
TO-220 |
1650 |
只做原廠渠道 可追溯貨源 |
詢價(jià) | ||
IR |
24+ |
TO-220 |
7250 |
絕對(duì)原裝現(xiàn)貨,價(jià)格低,歡迎詢購(gòu)! |
詢價(jià) | ||
IR |
2020+ |
TO-220 |
18600 |
百分百原裝正品 真實(shí)公司現(xiàn)貨庫(kù)存 本公司只做原裝 可 |
詢價(jià) | ||
IR |
23+ |
TO-220AB- |
7750 |
全新原裝優(yōu)勢(shì) |
詢價(jià) | ||
IR |
2016+ |
TO-220 |
31565 |
只做原裝,假一罰十,公司可開17%增值稅發(fā)票! |
詢價(jià) | ||
IR |
2018+ |
TO-220 |
6528 |
承若只做進(jìn)口原裝正品假一賠十! |
詢價(jià) | ||
IR |
23+ |
TO-220-3 |
11846 |
一級(jí)代理商現(xiàn)貨批發(fā),原裝正品,假一罰十 |
詢價(jià) | ||
IR |
21+ |
TO-220 |
12588 |
原裝現(xiàn)貨,量大可定 |
詢價(jià) | ||
IR |
22+ |
TO-220 |
22387 |
原裝正品現(xiàn)貨 |
詢價(jià) | ||
IR |
2020+ |
TO-220 |
80000 |
只做自己庫(kù)存,全新原裝進(jìn)口正品假一賠百,可開13%增 |
詢價(jià) |
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