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IRFB3307ZGPBF

HEXFETPower MOSFET

IRF

International Rectifier

IRFB3307ZPBF

HEXFETPowerMOSFET

Benefits ●ImprovedGate,AvalancheandDynamicdv/dtRuggedness ●FullyCharacterizedCapacitanceandAvalancheSOA ●EnhancedbodydiodedV/dtanddI/dtCapability Applications ●HighEfficiencySynchronousRectificationinSMPS ●UninterruptiblePowerSupply ●HighSpeedPowerSwitching

IRF

International Rectifier

IRFS3307

HEXFETPowerMOSFET

Benefits ?ImprovedGate,AvalancheandDynamicdV/dtRuggedness ?FullyCharacterizedCapacitanceandAvalancheSOA ?EnhancedbodydiodedV/dtanddI/dtCapability Applications ?HighEfficiencySynchronousRectificationinSMPS ?UninterruptiblePowerSupply ?HighSpeed

IRF

International Rectifier

IRFS3307PBF

HighEfficiencySynchronousRectificationinSMPS

IRF

International Rectifier

IRFS3307PBF

HighEfficiencySynchronousRectificationinSMPS

IRF

International Rectifier

IRFS3307ZPBF

HighEfficiencySynchronousRectificationinSMPS

IRF

International Rectifier

IRFS3307ZPBF

HEXFETPowerMOSFET

Benefits ●ImprovedGate,AvalancheandDynamicdv/dtRuggedness ●FullyCharacterizedCapacitanceandAvalancheSOA ●EnhancedbodydiodedV/dtanddI/dtCapability Applications ●HighEfficiencySynchronousRectificationinSMPS ●UninterruptiblePowerSupply ●HighSpeedPowerSwitching

IRF

International Rectifier

IRFSL3307

HEXFETPowerMOSFET

Benefits ?ImprovedGate,AvalancheandDynamicdV/dtRuggedness ?FullyCharacterizedCapacitanceandAvalancheSOA ?EnhancedbodydiodedV/dtanddI/dtCapability Applications ?HighEfficiencySynchronousRectificationinSMPS ?UninterruptiblePowerSupply ?HighSpeed

IRF

International Rectifier

IRFSL3307ZPBF

HEXFETPowerMOSFET

Benefits ●ImprovedGate,AvalancheandDynamicdv/dtRuggedness ●FullyCharacterizedCapacitanceandAvalancheSOA ●EnhancedbodydiodedV/dtanddI/dtCapability Applications ●HighEfficiencySynchronousRectificationinSMPS ●UninterruptiblePowerSupply ●HighSpeedPowerSwitching

IRF

International Rectifier

LTC3307A

1.75ASynchronousStep-DownRegulatorin1.6mm×1mmWLCSP

FEATURES -VOUTRange:0.5Vto3.65V -2MHzSwitchingFrequency -LowRippleBurstMode?orForcedContinuous ModeofOperation -HighEfficiency:30mΩNMOS,100mΩPMOS -PeakCurrentModeControl -22nsMinimumOn-Time -WideBandwidth,FastTransientResponse -SafelyToleratesInductor

ADAnalog Devices

亞德諾亞德諾半導(dǎo)體技術(shù)有限公司

LTC3307A

5V,15ASynchronousStep-DownSilentSwitcherin3mm×3mmLQFN

FEATURES -LayoutCompatiblewithLTC3310/LTC3311Family -SilentSwitcher?Architecture -UltralowEMIEmissions -HighEfficiency:3mΩNMOSand8mΩPMOS -WideBandwidth,FastTransientResponse -SafelyToleratesInductorSaturationinOverload -VINRange:2.25Vto5.5V -VOUTRange:0

ADAnalog Devices

亞德諾亞德諾半導(dǎo)體技術(shù)有限公司

LTC3307A

5V,Dual4A/Dual-Phase8AStep-DownDC/DCRegulatorin2.2mm×2.7mmWLCSP

FEATURES -Dual4AOutputs -ConfigurableasSingleOutput,2-Phase8ABuck -HighEfficiency:12mΩHigh-Sideand8mΩLow-Side -±1MaximumTotalDCOutputError -WideBandwidth,FastTransientResponse -VINRange:2.25Vto5.5V -VOUTRange:0.5VtoVIN -ProgrammableFrequencyto3MHz

ADAnalog Devices

亞德諾亞德諾半導(dǎo)體技術(shù)有限公司

LTC3307A

5V,2ASynchronousStep-DownRegulatorin2mm×2mmFCQFN

FEATURES -HighEfficiency:30mΩNMOS,85mΩPMOS -PeakCurrentModeControl -27nsMinimumOn-Time -WideBandwidth,FastTransientResponse -Low-RippleBurstMode?OperationwithIQof80μA -Upto6MHzOperation -SafelyToleratesInductorSaturationinOverload -VINRange:2.25Vto5

ADAnalog Devices

亞德諾亞德諾半導(dǎo)體技術(shù)有限公司

LTC3307A

5V,12.5ASynchronousStep-DownSilentSwitcherin3mmx3mmLQFN

ADAnalog Devices

亞德諾亞德諾半導(dǎo)體技術(shù)有限公司

LTC3307A

5V,12.5ASynchronousStep-DownSilentSwitcher2in3mmx3mmLQFN

ADAnalog Devices

亞德諾亞德諾半導(dǎo)體技術(shù)有限公司

LTC3307A

Dual5V,2ASynchronousStep-DownDC/DCsin2mm?2mmLQFN

ADAnalog Devices

亞德諾亞德諾半導(dǎo)體技術(shù)有限公司

LTC3307A

5V,3ASynchronousStep-DownSilentSwitcherin2mmx2mmLQFN

ADAnalog Devices

亞德諾亞德諾半導(dǎo)體技術(shù)有限公司

LTC3307A

5V,Dual6A/Dual-Phase12AStep-DownDC/DCRegulator

ADAnalog Devices

亞德諾亞德諾半導(dǎo)體技術(shù)有限公司

LTC3307AEV#TRPBF

5V,3ASynchronousStep-DownSilentSwitcherin2mmx2mmLQFN

ADAnalog Devices

亞德諾亞德諾半導(dǎo)體技術(shù)有限公司

LTC3307AEV#TRPBF

5V,3ASynchronousStep-DownSilentSwitcherin2mmx2mmLQFN

ADAnalog Devices

亞德諾亞德諾半導(dǎo)體技術(shù)有限公司

詳細(xì)參數(shù)

  • 型號(hào):

    IRFB3307ZGPBF

  • 功能描述:

    MOSFET MOSFT 75V 120A 5.8mOhm 79nC

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
IR
24+
TO-220
1650
只做原廠渠道 可追溯貨源
詢價(jià)
IR
24+
TO-220
7250
絕對(duì)原裝現(xiàn)貨,價(jià)格低,歡迎詢購(gòu)!
詢價(jià)
IR
2020+
TO-220
18600
百分百原裝正品 真實(shí)公司現(xiàn)貨庫(kù)存 本公司只做原裝 可
詢價(jià)
IR
23+
TO-220AB-
7750
全新原裝優(yōu)勢(shì)
詢價(jià)
IR
2016+
TO-220
31565
只做原裝,假一罰十,公司可開17%增值稅發(fā)票!
詢價(jià)
IR
2018+
TO-220
6528
承若只做進(jìn)口原裝正品假一賠十!
詢價(jià)
IR
23+
TO-220-3
11846
一級(jí)代理商現(xiàn)貨批發(fā),原裝正品,假一罰十
詢價(jià)
IR
21+
TO-220
12588
原裝現(xiàn)貨,量大可定
詢價(jià)
IR
22+
TO-220
22387
原裝正品現(xiàn)貨
詢價(jià)
IR
2020+
TO-220
80000
只做自己庫(kù)存,全新原裝進(jìn)口正品假一賠百,可開13%增
詢價(jià)
更多IRFB3307ZGPBF供應(yīng)商 更新時(shí)間2024-12-23 13:42:00