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IRFBC20

Power MOSFET(Vdss=600V, Rds(on)=4.4ohm, Id=2.2A)

IRF

International Rectifier

IRFBC20

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipation

KERSEMI

Kersemi Electronic Co., Ltd.

IRFBC20

Power MOSFET

FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?Fastswitching ?Easeofparalleling ?Simpledriverequirements ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovidesinformationaboutpartsthatare RoH

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFBC20

iscN-Channel MOSFET Transistor

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IRFBC20

Power MOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFBC20

Power MOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFBC20_V01

Power MOSFET

FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?Fastswitching ?Easeofparalleling ?Simpledriverequirements ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovidesinformationaboutpartsthatare RoH

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFBC20L

Power MOSFET(Vdss=600V, Rds(on)=4.4ohm, Id=2.2A)

Description ThirdgenerationHEXFETsfrominternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD2PakisasurfacemountpowerpackagecapableoftheaccommodatingdiesizesuptoHEX-4.It

IRF

International Rectifier

IRFBC20L

Power MOSFET

FEATURES ?Surface-mount(IRFBC20S,SiHFBC20S) ?Low-profilethrough-hole(IRFBC20L,SiHFBC20L) ?Availableintapeandreel(IRFBC20,SiiHFBC20S) ?DynamicdV/dtrating ?150°Coperatingtemperature ?Fastswitching ?Fullyavalancherated ?Materialcategorization:fordefinitionsofco

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFBC20LPBF

HEXFET Power MOSFET

Description ThirdgenerationHEXFETsfrominternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD2PakisasurfacemountpowerpackagecapableoftheaccommodatingdiesizesuptoHEX-4.It

IRF

International Rectifier

詳細(xì)參數(shù)

  • 型號(hào):

    IRFBC20

  • 功能描述:

    MOSFET N-Chan 600V 2.2 Amp

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
IR
06+
TO-220
10000
全新原裝 絕對(duì)有貨
詢價(jià)
IR
2015+
TO-220AB
12500
全新原裝,現(xiàn)貨庫(kù)存長(zhǎng)期供應(yīng)
詢價(jià)
IR
2015+
TO-220
19889
一級(jí)代理原裝現(xiàn)貨,特價(jià)熱賣!
詢價(jià)
ON
23+
DIP
9767
詢價(jià)
IR
23+
TO-220AB
8600
全新原裝現(xiàn)貨
詢價(jià)
IR
24+
TO-220AB
8866
詢價(jià)
IR
24+
原廠封裝
1000
原裝現(xiàn)貨假一罰十
詢價(jià)
IR
24+
TO252
6800
絕對(duì)原裝!真實(shí)庫(kù)存!
詢價(jià)
VISHAY
2020+
TO-220
3800
百分百原裝正品 真實(shí)公司現(xiàn)貨庫(kù)存 本公司只做原裝 可
詢價(jià)
ir
24+
N/A
6980
原裝現(xiàn)貨,可開(kāi)13%稅票
詢價(jià)
更多IRFBC20供應(yīng)商 更新時(shí)間2025-2-2 9:16:00