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IRFD224PBF

Power MOSFET

VDS(V)250 RDS(on)(Ω)VGS=10V1.1 Qg(Max.)(nC)14 Qgs(nC)2.7 Qgd(nC)7.8 ConfigurationSingle DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness

VishayVishay Siliconix

威世科技威世科技半導體

IRFD224PBF

HEXFET POWER MOSFET (VDSS = 250V , RDS(on) = 1.1廓 , ID = 0.63A)

VDSS=250V RDS(on)=1.1? ID=0.63A Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowonresistanceandcost-effectiveness.The4-pinDIPpackageisalow-costmachine-insertableca

IRF

International Rectifier

IRFD224PBF

Power MOSFET

VishayVishay Siliconix

威世科技威世科技半導體

IRFM224B

250VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

IRFR224

PowerMOSFET(Vdss=250V,Rds(on)=1.1ohm,Id=3.8A)

IRF

International Rectifier

IRFR224

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsformVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderigtechniques.Thestr

VishayVishay Siliconix

威世科技威世科技半導體

IRFR224

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsformVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderigtechniques.Thestr

KERSEMI

Kersemi Electronic Co., Ltd.

IRFR224

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IRFR224

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsformVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderigtechniques.Thestr

KERSEMI

Kersemi Electronic Co., Ltd.

IRFR224

PowerMOSFET

FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?Surface-mount(IRFR224,SiHFR224) ?Straightlead(IRFU224,SiHFU224) ?Availableintapeandreel ?Fastswitching ?Easeofparalleling ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?9

VishayVishay Siliconix

威世科技威世科技半導體

詳細參數(shù)

  • 型號：

    IRFD224PBF

  • 功能描述：

    MOSFET N-Chan 250V 0.63 Amp

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應商型號品牌批號封裝庫存備注價格
Vishay Siliconix
24+
4-HVMDIP
30000
晶體管-分立半導體產(chǎn)品-原裝正品
 詢價
VISHAY(威世)
23+
HVMDIP-4
9555
支持大陸交貨,美金交易。原裝現(xiàn)貨庫存。
 詢價
VishayIR
24+
4-DIP
2300
詢價
VISHAY
23+
DIP2
7750
全新原裝優(yōu)勢
 詢價
IRF
23+
NA
19960
只做進口原裝,終端工廠免費送樣
 詢價
VISHAY(威世)
2112+
DIP-4
115000
2500個/圓盤一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,
 詢價
VISHAY
1809+
DIP-4
3675
就找我吧!--邀您體驗愉快問購元件!
 詢價
IR-VISHAY
11+
DIP4
19311
原裝現(xiàn)貨
 詢價
Vishay Siliconix
22+
4DIP
9000
原廠渠道,現(xiàn)貨配單
 詢價
Vishay Siliconix
21+
4DIP
13880
公司只售原裝,支持實單
 詢價
更多IRFD224PBF供應商 更新時間2025-2-2 10:12:00

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