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IRFBC30	文件：328.77 Kbytes Page：2 Pages	iscN-Channel MOSFET Transistor DESCRIPTION ?Highcurrent,highspeedswitching ?Switchmodepowersupplies ?DC-ACconvertersforweldingequipmentandUninterruptiblepowersuppliesandmotorDriver. FEATURES ?LowerInputCapacitance ?ImprovedGateCharge ?ExtendedSafeOperatingArea ?RuggedGateOxideTechnolog	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
IRFBC30	文件：85.58 Kbytes Page：8 Pages	N - CHANNEL 600V - 1.8 ohm - 3.6A - TO-220 PowerMESH]II MOSFET DESCRIPTION ThePowerMESH?ΙΙistheevolutionofthefirstgenerationofMESHOVERLAY?.ThelayoutrefinementsintroducedgreatlyimprovetheRon*areafigureofmeritwhilekeepingthedeviceattheleadingedgeforwhatconcernsswitchingspeed,gatechargeandruggedness. ■TYPICALRDS(on)=	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán)	STMICROELECTRONICS
IRFBC30	文件：173.79 Kbytes Page：6 Pages	Power MOSFET(Vdss=600V, Rds(on)=2.2ohm, Id=3.6A)	IRF International Rectifier	IRF
IRFBC30	文件：780.72 Kbytes Page：8 Pages	Power MOSFET	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFBC30	文件：2.43533 Mbytes Page：31 Pages	SEMICONDUCTORS	etc2List of Unclassifed Manufacturers etc未分類制造商etc2未分類制造商	etc2
IRFBC30	文件：943.73 Kbytes Page：9 Pages	Power MOSFET	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFBC30A	文件：101.63 Kbytes Page：8 Pages	Power MOSFET(Vdss=600V, Rds(on)max=2.2ohm, Id=3.6A) Benefits ●LowGateChargeQgresultsinSimpleDriveRequirement ●ImprovedGate,Avalancheanddynamicdv/dtRuggedness ●FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent ●EffectiveCossspecified(SeeAN1001) Applications ●SwitchModePowerSupply(SMPS) ●Uninterrupt	IRF International Rectifier	IRF
IRFBC30AL	文件：274.61 Kbytes Page：12 Pages	Power MOSFETs FEATURES ?Halogen-freeAccordingtoIEC61249-2-21 Definition ?LowGateChargeQgResultsinSimpleDrive Requirement ?ImprovedGate,AvalancheandDynamicdV/dt Ruggedness ?FullyCharacterizedCapacitanceandAvalancheVoltage andCurrent ?EffectiveCossSpecified ?ComplianttoRo	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFBC30ALPBF	文件：274.61 Kbytes Page：12 Pages	Power MOSFETs FEATURES ?Halogen-freeAccordingtoIEC61249-2-21 Definition ?LowGateChargeQgResultsinSimpleDrive Requirement ?ImprovedGate,AvalancheandDynamicdV/dt Ruggedness ?FullyCharacterizedCapacitanceandAvalancheVoltage andCurrent ?EffectiveCossSpecified ?ComplianttoRo	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFBC30APBF	文件：175.46 Kbytes Page：8 Pages	HEXFET? Power MOSFET Benefits ●LowGateChargeQgresultsinSimpleDriveRequirement ●ImprovedGate,Avalancheanddynamicdv/dtRuggedness ●FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent ●EffectiveCossspecified(SeeAN1001) Applications ●SwitchModePowerSupply(SMPS) ●Uninterrupt	IRF International Rectifier	IRF
IRFBC30AS	文件：274.61 Kbytes Page：12 Pages	Power MOSFETs FEATURES ?Halogen-freeAccordingtoIEC61249-2-21 Definition ?LowGateChargeQgResultsinSimpleDrive Requirement ?ImprovedGate,AvalancheandDynamicdV/dt Ruggedness ?FullyCharacterizedCapacitanceandAvalancheVoltage andCurrent ?EffectiveCossSpecified ?ComplianttoRo	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFBC30AS	文件：147.97 Kbytes Page：10 Pages	Power MOSFET(Vdss=600V, Rds(on)max=2.2ohm, Id=3.6A) Benefits ●LowGateChargeQgresultsinSimpleDriveRequirement ●ImprovedGate,Avalancheanddynamicdv/dtRuggedness ●FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent ●EffectiveCossspecified(SeeAN1001) Applications ●SwitchModePowerSupply(SMPS) ●Uninterrupt	IRF International Rectifier	IRF
IRFBC30ASPBF	文件：274.61 Kbytes Page：12 Pages	Power MOSFETs FEATURES ?Halogen-freeAccordingtoIEC61249-2-21 Definition ?LowGateChargeQgResultsinSimpleDrive Requirement ?ImprovedGate,AvalancheandDynamicdV/dt Ruggedness ?FullyCharacterizedCapacitanceandAvalancheVoltage andCurrent ?EffectiveCossSpecified ?ComplianttoRo	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFBC30ASTRLPBFA	文件：274.61 Kbytes Page：12 Pages	Power MOSFETs FEATURES ?Halogen-freeAccordingtoIEC61249-2-21 Definition ?LowGateChargeQgResultsinSimpleDrive Requirement ?ImprovedGate,AvalancheandDynamicdV/dt Ruggedness ?FullyCharacterizedCapacitanceandAvalancheVoltage andCurrent ?EffectiveCossSpecified ?ComplianttoRo	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFBC30ASTRRPBFA	文件：274.61 Kbytes Page：12 Pages	Power MOSFETs FEATURES ?Halogen-freeAccordingtoIEC61249-2-21 Definition ?LowGateChargeQgResultsinSimpleDrive Requirement ?ImprovedGate,AvalancheandDynamicdV/dt Ruggedness ?FullyCharacterizedCapacitanceandAvalancheVoltage andCurrent ?EffectiveCossSpecified ?ComplianttoRo	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFBC30L	文件：362.05 Kbytes Page：10 Pages	Power MOSFET(Vdss=600V, Rds(on)=2.2ohm, Id=3.6A) Description ThirdgenerationHEXFETsfrominternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD2PakisasurfacemountpowerpackagecapableoftheaccommodatingdiesizesuptoHEX-4.It	IRF International Rectifier	IRF
IRFBC30L	文件：147.97 Kbytes Page：10 Pages	Power MOSFET(Vdss=600V, Rds(on)max=2.2ohm, Id=3.6A) Benefits ●LowGateChargeQgresultsinSimpleDriveRequirement ●ImprovedGate,Avalancheanddynamicdv/dtRuggedness ●FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent ●EffectiveCossspecified(SeeAN1001) Applications ●SwitchModePowerSupply(SMPS) ●Uninterrupt	IRF International Rectifier	IRF
IRFBC30L	文件：310.37 Kbytes Page：11 Pages	Power MOSFET FEATURES ?Surface-mount(IRFBC30S,SiHFBC30S) ?Low-profilethrough-hole(IRFBC30L,SiHFBC30L) ?Availableintapeandreel(IRFBC30S, SiHFBC30S) ?DynamicdV/dtrating ?150°Coperatingtemperature ?Fastswitching ?Fullyavalancherated ?Materialcategorization:fordefinitionsofc	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFBC30S	文件：362.05 Kbytes Page：10 Pages	Power MOSFET(Vdss=600V, Rds(on)=2.2ohm, Id=3.6A) Description ThirdgenerationHEXFETsfrominternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD2PakisasurfacemountpowerpackagecapableoftheaccommodatingdiesizesuptoHEX-4.It	IRF International Rectifier	IRF
IRFBC30S	文件：310.37 Kbytes Page：11 Pages	Power MOSFET FEATURES ?Surface-mount(IRFBC30S,SiHFBC30S) ?Low-profilethrough-hole(IRFBC30L,SiHFBC30L) ?Availableintapeandreel(IRFBC30S, SiHFBC30S) ?DynamicdV/dtrating ?150°Coperatingtemperature ?Fastswitching ?Fullyavalancherated ?Materialcategorization:fordefinitionsofc	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay

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詳細(xì)參數(shù)

型號(hào)：
IRFBC30
功能描述：
MOSFET N-Chan 600V 3.6 Amp
RoHS：
否
制造商：
STMicroelectronics
晶體管極性：
N-Channel
汲極/源極擊穿電壓：
650 V
閘/源擊穿電壓：
25 V
漏極連續(xù)電流：
130 A 電阻汲極/源極
RDS（導(dǎo)通）：
0.014 Ohms
配置：
Single
安裝風(fēng)格：
Through Hole
封裝/箱體：
Max247
封裝：
Tube

供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫存	備注	價(jià)格
深圳市宏捷佳電子科技有限公司	IRFBC30	IR	2018+	TO-220	5000	全新原裝真實(shí)庫存含13點(diǎn)增值稅票！	詢價(jià)
深圳市星佑電子有限公司	IRFBC30	IR	05+	TO-220	7000	自己公司全新庫存絕對(duì)有貨	詢價(jià)
深圳市昌和盛利電子有限公司	IRFBC30	IR	23+	TO-220	19526		詢價(jià)
深圳市聯(lián)世界科技有限公司	IRFBC30	IR	9902		30	原裝正品現(xiàn)貨庫存價(jià)優(yōu)	詢價(jià)
深圳市勤思達(dá)科技有限公司	IRFBC30	IR	2015+	TO-220AB	12500	全新原裝,現(xiàn)貨庫存長期供應(yīng)	詢價(jià)
深圳市卓越微芯電子有限公司	IRFBC30	IR	2020+	TO220	18600	百分百原裝正品真實(shí)公司現(xiàn)貨庫存本公司只做原裝可	詢價(jià)
深圳市弘為電子有限公司	IRFBC30	IR	16+	原廠封裝	5000	原裝現(xiàn)貨假一罰十	詢價(jià)
深圳市博浩通科技有限公司	IRFBC30	IR	23+	TO-220	8890	價(jià)格優(yōu)勢(shì)/原裝現(xiàn)貨/客戶至上/歡迎廣大客戶來電查詢	詢價(jià)
深圳市利加科技有限公司	IRFBC30	IOR	16+	TO-220	10000	全新原裝現(xiàn)貨	詢價(jià)
綠盛電子(香港)有限公司	IRFBC30	IR	2015+	SOP/DIP	19889	一級(jí)代理原裝現(xiàn)貨,特價(jià)熱賣!	詢價(jià)

更多IRFBC30供應(yīng)商更新時(shí)間2025-1-8 22:27:00

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