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零件編號(hào)	下載&訂購	功能描述	制造商&上傳企業(yè)	LOGO
IRFD120PBF	文件：1.80106 Mbytes Page：8 Pages	HEXFET Power MOSFET DESCRIPTION ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. The4-pinDIPpackageisalowcostmachine-insertablecasestylewhichcanbestackedinmultip	IRF International Rectifier	IRF
IRFD120PBF	文件：935 Kbytes Page：9 Pages	Power MOSFET	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFE120	文件：237.14 Kbytes Page：7 Pages	HEXFETTRANSISTORSSURFACEMOUNT(LCC-18) REPETITIVEAVALANCHEANDdv/dtRATEDHEXFET?TRANSISTORSSURFACEMOUNT(LCC-18) Theleadlesschipcarrier(LCC)packagerepresentsthelogicalnextstepinthecontinualevolutionofsurfacemounttechnology.DesingedtobeaclosereplacementfortheTO-39package,theLCCwillgivedesignersthe	IRF International Rectifier	IRF
IRFE120	文件：295.69 Kbytes Page：7 Pages	SimpleDriveRequirements	IRF International Rectifier	IRF
IRFF120	文件：325.84 Kbytes Page：7 Pages	6.0A,100V,0.300Ohm,N-ChannelPowerMOSFET 6.0A,100V,0.300Ohm,N-ChannelPowerMOSFET ThisN-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsa	Intersil Intersil Corporation	Intersil
IRFF120	文件：131.97 Kbytes Page：7 Pages	REPETITIVEAVALANCHEANDdv/dtRATEDHEXFETTRANSISTORSTHRU-HOLE(TO-205AF) Description TheHEXFET?technologyisthekeytoInternationalRectifier’sHiReladvancedlineofpowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowonstateresistancecombinedwithhightransconductance. TheHEXFE	IRF International Rectifier	IRF
IRFF120	文件：165.85 Kbytes Page：5 Pages	N-ChannelEnhancement-ModePowerMOSField-EffectTransistors 5.0Aand6.0A,60V-100VrDS(0n)=0.30Ωand0.40Ω Features: ■SOAispower-dissipationlimited ■Nanosecondswitchingspeeds ■Lineartransfercharacteristics ■Highinputimpedance ■Majoritycarrierdevice	GESS GE Solid State	GESS
IRFF120	文件：156.74 Kbytes Page：3 Pages	6.0A,100V,0.300Ohm,N-ChannelPowerMOSFET 6.0A,100V,0.300Ohm,N-ChannelPowerMOSFET ThisN-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsa	NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司	NJSEMI
IRFM120A	文件：269.29 Kbytes Page：7 Pages	IEEE802.3afCompatible IEEE802.3afCompatible FEATURES ?AvalancheRuggedTechnology ?RuggedGateOxideTechnology ?LowerInputCapacitance ?ImprovedGateCharge ?ExtendedSafeOperatingArea ?LowerLeakageCurrent:10μA(Max.)@VDS=100V ?LowerRDS(ON):0.155Ω(Typ.)	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
IRFM120A	文件：725.8 Kbytes Page：6 Pages	AvalancheRuggedTechnology FEATURES ?AvalancheRuggedTechnology ?RuggedGateOxideTechnology ?LowerInputCapacitance ?ImprovedGateCharge ?ExtendedSafeOperatingArea ?LowerLeakageCurrent:10μA(Max.)@VDS=100V ?LowerRDS(ON):0.155Ω(Typ.)	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFM120A	文件：274.78 Kbytes Page：7 Pages	AvalancheRuggedTechnology IEEE802.3afCompatible FEATURES ?AvalancheRuggedTechnology ?RuggedGateOxideTechnology ?LowerInputCapacitance ?ImprovedGateCharge ?ExtendedSafeOperatingArea ?LowerLeakageCurrent:10μA(Max.)@VDS=100V ?LowerRDS(ON):0.155Ω(Typ.)	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
IRFM120A	文件：930.12 Kbytes Page：6 Pages	N-Channel100-V(D-S)MOSFET	VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司	VBSEMI
IRFM120A	文件：385.13 Kbytes Page：8 Pages	AdvancedPowerMOSFET	ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司	ONSEMI
IRFM120ATF	文件：274.78 Kbytes Page：7 Pages	AvalancheRuggedTechnology IEEE802.3afCompatible FEATURES ?AvalancheRuggedTechnology ?RuggedGateOxideTechnology ?LowerInputCapacitance ?ImprovedGateCharge ?ExtendedSafeOperatingArea ?LowerLeakageCurrent:10μA(Max.)@VDS=100V ?LowerRDS(ON):0.155Ω(Typ.)	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
IRFR120	文件：56 Kbytes Page：7 Pages	8.4A,100V,0.270Ohm,N-ChannelPowerMOSFETs TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchas	Intersil Intersil Corporation	Intersil
IRFR120	文件：179.46 Kbytes Page：6 Pages	HEXFETPOWERMOSFET DESCRIPTION ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. FEATURES ?DynamicdV/dtRating ?RepetitiveAvalancheRated ?SurfaceMount(IRFR120) ?Str	IRF International Rectifier	IRF
IRFR120	文件：1.70201 Mbytes Page：8 Pages	IRFR120 DESCRIPTION ThirdgenerationpowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFR120	文件：4.22483 Mbytes Page：7 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFR120	文件：321.05 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
IRFR120	文件：838.17 Kbytes Page：13 Pages	PowerMOSFET FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?Surface-mount(IRFR120,SiHFR120) ?Straightlead(IRFU120,SiHFU120) ?Availableintapeandreel ?Fastswitching ?Easeofparalleling ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?9	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay

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型號(hào)：
IRFD120PBF
功能描述：
MOSFET 100V Single N-Channel HEXFET
RoHS：
否
制造商：
STMicroelectronics
晶體管極性：
N-Channel
汲極/源極擊穿電壓：
650 V
閘/源擊穿電壓：
25 V
漏極連續(xù)電流：
130 A 電阻汲極/源極
RDS（導(dǎo)通）：
0.014 Ohms
配置：
Single
安裝風(fēng)格：
Through Hole
封裝/箱體：
Max247
封裝：
Tube

供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫存	備注	價(jià)格
深圳市富利微電子科技有限公司	IRFD120PBF	VISHAY	23+	DIP-4	20540	保證進(jìn)口原裝現(xiàn)貨假一賠十	詢價(jià)
深圳市卓越微芯電子有限公司	IRFD120PBF	VISHAY	2020+	DIP-4	9600	百分百原裝正品真實(shí)公司現(xiàn)貨庫存本公司只做原裝可	詢價(jià)
深圳市勤思達(dá)科技有限公司	IRFD120PBF	IR	2020+	DIP-4	22000	全新原裝正品現(xiàn)貨庫存價(jià)格優(yōu)勢(shì)	詢價(jià)
中天科工半導(dǎo)體（深圳）有限公司	IRFD120PBF	Vishay Siliconix	24+	4-HVMDIP	30000	晶體管-分立半導(dǎo)體產(chǎn)品-原裝正品	詢價(jià)
深圳市榮澤信電子科技有限公司	IRFD120PBF	VISHAY	24+	N/A	15000	全新原裝的現(xiàn)貨	詢價(jià)
深圳市金芯陽科技有限公司	IRFD120PBF	VISHAY	15+	原廠原裝	11300	進(jìn)口原裝現(xiàn)貨假一賠十	詢價(jià)
深圳市龍瀚電子有限公司	IRFD120PBF	VISHAY	16+	DIP-4	36000	原裝正品,優(yōu)勢(shì)庫存81	詢價(jià)
深圳市賽爾通科技有限公司	IRFD120PBF	VISHAY	23+	DIP-4	65400		詢價(jià)
深圳市寶隆宏業(yè)科技有限公司	IRFD120PBF	VISHAY/威世	21+	DIP-4	36800	進(jìn)口原裝現(xiàn)貨假一賠十	詢價(jià)
深圳市航潤創(chuàng)能電子集團(tuán)有限公司	IRFD120PBF	VISHAY/威世	20+	DIP-4	400	進(jìn)口原裝假一賠十支持含稅	詢價(jià)

更多IRFD120PBF供應(yīng)商更新時(shí)間2025-1-9 18:31:00

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