零件編號(hào) | 下載&訂購(gòu) | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
IRFM120A | IEEE802.3af Compatible IEEE802.3afCompatible FEATURES ?AvalancheRuggedTechnology ?RuggedGateOxideTechnology ?LowerInputCapacitance ?ImprovedGateCharge ?ExtendedSafeOperatingArea ?LowerLeakageCurrent:10μA(Max.)@VDS=100V ?LowerRDS(ON):0.155Ω(Typ.) | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | |
IRFM120A | Avalanche Rugged Technology FEATURES ?AvalancheRuggedTechnology ?RuggedGateOxideTechnology ?LowerInputCapacitance ?ImprovedGateCharge ?ExtendedSafeOperatingArea ?LowerLeakageCurrent:10μA(Max.)@VDS=100V ?LowerRDS(ON):0.155Ω(Typ.) | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | |
IRFM120A | Avalanche Rugged Technology IEEE802.3afCompatible FEATURES ?AvalancheRuggedTechnology ?RuggedGateOxideTechnology ?LowerInputCapacitance ?ImprovedGateCharge ?ExtendedSafeOperatingArea ?LowerLeakageCurrent:10μA(Max.)@VDS=100V ?LowerRDS(ON):0.155Ω(Typ.) | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | |
IRFM120A | N-Channel 100-V (D-S) MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司 | VBSEMI | |
IRFM120A | Advanced Power MOSFET | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | |
Avalanche Rugged Technology IEEE802.3afCompatible FEATURES ?AvalancheRuggedTechnology ?RuggedGateOxideTechnology ?LowerInputCapacitance ?ImprovedGateCharge ?ExtendedSafeOperatingArea ?LowerLeakageCurrent:10μA(Max.)@VDS=100V ?LowerRDS(ON):0.155Ω(Typ.) | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
8.4A,100V,0.270Ohm,N-ChannelPowerMOSFETs TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchas | Intersil Intersil Corporation | Intersil | ||
HEXFETPOWERMOSFET DESCRIPTION ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. FEATURES ?DynamicdV/dtRating ?RepetitiveAvalancheRated ?SurfaceMount(IRFR120) ?Str | IRF International Rectifier | IRF | ||
IRFR120 DESCRIPTION ThirdgenerationpowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司 | ISC | ||
PowerMOSFET FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?Surface-mount(IRFR120,SiHFR120) ?Straightlead(IRFU120,SiHFU120) ?Availableintapeandreel ?Fastswitching ?Easeofparalleling ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?9 | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
N-channelEnhancementModePowerMOSFET Features ?VDS=100V,ID=18.1A RDS(ON) | BychipBYCHIP ELECTRONICS CO., LIMITED 百域芯深圳市百域芯科技有限公司 | Bychip | ||
PowerMOSFET | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司 | ISC | ||
AdvancedPowerMOSFET | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
AvalancheRuggedTechnology | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
HEXFETPowerMOSFET Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,p | IRF International Rectifier | IRF | ||
N-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司 | ISC | ||
TheD-PAKisdesignedforsurfacemountingusingvaporphase,infraredorwavesolderingtechniques. Features VDS(V)=100V ID=9.4A(VGS=10V) RDS(ON)=210mW(VGS=10V) | UMWGuangdong Youtai Semiconductor Co., Ltd. 友臺(tái)半導(dǎo)體廣東友臺(tái)半導(dǎo)體有限公司 | UMW |
詳細(xì)參數(shù)
- 型號(hào):
IRFM120A
- 制造商:
Rochester Electronics LLC
- 制造商:
Fairchild Semiconductor Corporation
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
23+ |
SOT223 |
19684 |
專注原裝正品現(xiàn)貨特價(jià)中量大可定 |
詢價(jià) | |||
IR |
24+ |
SOT-223 |
22200 |
新進(jìn)庫(kù)存/原裝 |
詢價(jià) | ||
FAIRCHILD |
1415+ |
SOT-223 |
28500 |
全新原裝正品,優(yōu)勢(shì)熱賣 |
詢價(jià) | ||
FSC |
17+ |
SOT-223 |
6200 |
詢價(jià) | |||
FAIRCHI |
2020+ |
SOT-223 |
9588 |
百分百原裝正品 真實(shí)公司現(xiàn)貨庫(kù)存 本公司只做原裝 可 |
詢價(jià) | ||
23+ |
NA |
19960 |
只做進(jìn)口原裝,終端工廠免費(fèi)送樣 |
詢價(jià) | |||
FAIRCHILD |
24+ |
SOT223 |
2987 |
只售原裝自家現(xiàn)貨!誠(chéng)信經(jīng)營(yíng)!歡迎來(lái)電! |
詢價(jià) | ||
FAI |
22+23+ |
SOT223 |
72999 |
絕對(duì)原裝正品現(xiàn)貨,全新深圳原裝進(jìn)口現(xiàn)貨 |
詢價(jià) | ||
FAIRCHI |
21+ |
SOT-223 |
12588 |
原裝正品,自己庫(kù)存 假一罰十 |
詢價(jià) | ||
FAIRCHILD |
20+ |
SOT-223 |
38900 |
原裝優(yōu)勢(shì)主營(yíng)型號(hào)-可開原型號(hào)增稅票 |
詢價(jià) |
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