首頁 >IRFP21N60LPBF>規(guī)格書列表
| 零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
|---|---|---|---|---|
IRFP21N60LPBF | SMPS MOSFET FEATURES ?SuperfastbodydiodeeliminatestheneedforexternaldiodesinZVSapplications. ?LowerGatechargeresultsinsimpledriverequirements. ?EnhanceddV/dtcapabilitiesofferimprovedruggedness. ?HigherGatevoltagethresholdoffersimprovednoiseimmunity. APPLICATIONS ?Zero | IRF International Rectifier | IRF | |
IRFP21N60LPBF | Power MOSFET PowerMOSFET FEATURES ?SuperfastBodyDiodeEliminatestheNeedforExternalDiodesinZVSApplications ?LowerGateChargeResultsinSimpleDriveRequirements ?EnhanceddV/dtCapabilitiesOfferImprovedRuggedness ?HigherGateVoltageThresholdOffersImprovedNoiseImmunity ?Lead(Pb) | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | |
SMPSMOSFET | IRF International Rectifier | IRF | ||
HIPERFETPowerMOSFTETs HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications. | IXYS IXYS Corporation | IXYS | ||
HIPERFETPowerMOSFTETs HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications. | IXYS IXYS Corporation | IXYS | ||
HIPERFETPowerMOSFTETs HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications. | IXYS IXYS Corporation | IXYS | ||
InsulatedGateBipolarTransistor InsulatedGateBipolarTransistor N–ChannelEnhancement–ModeSiliconGate ThisInsulatedGateBipolarTransistor(IGBT)usesanadvancedterminationschemetoprovideanenhancedandreliablehighvoltage–blockingcapability.Itsnew600VIGBTtechnologyisspecificallysuitedforapplications | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
InsulatedGateBipolarTransistor InsulatedGateBipolarTransistor N–ChannelEnhancement–ModeSiliconGate ThisInsulatedGateBipolarTransistor(IGBT)usesanadvancedterminationschemetoprovideanenhancedandreliablehighvoltage–blockingcapability.Itsnew600VIGBTtechnologyisspecificallysuitedforapplications | MotorolaMotorola, Inc 摩托羅拉加爾文制造公司 | Motorola | ||
InsulatedGateBipolarTransistor ThisInsulatedGateBipolarTransistor(IGBT)isco–packagedwithasoftrecoveryultra–fastrectifierandusesanadvancedterminationschemetoprovideanenhancedandreliablehighvoltage–blockingcapability.Itsnew600VIGBTtechnologyisspecificallysuitedforapplicationsrequiringbotha | MotorolaMotorola, Inc 摩托羅拉加爾文制造公司 | Motorola | ||
InsulatedGateBipolarTransistor ThisInsulatedGateBipolarTransistor(IGBT)isco–packagedwithasoftrecoveryultra–fastrectifierandusesanadvancedterminationschemetoprovideanenhancedandreliablehighvoltage–blockingcapability.Itsnew600VIGBTtechnologyisspecificallysuitedforapplicationsrequiringbotha | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
EFSeriesPowerMOSFETwithFastBodyDiode | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
EFSeriesPowerMOSFETwithFastBodyDiode FEATURES ?FastbodydiodeMOSFETusingEseries technology ?Reducedtrr,Qrr,andIRRM ?Lowfigure-of-merit(FOM):RonxQg ?Lowinputcapacitance(Ciss) ?IncreasedrobustnessduetolowQrr ?Ultralowgatecharge(Qg) ?Avalancheenergyrated(UIS) ?Materialcategorization:forde | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
EFSeriesPowerMOSFETwithFastBodyDiode | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
EFSeriesPowerMOSFETwithFastBodyDiode | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
PowerMOSFET PowerMOSFET FEATURES ?SuperfastBodyDiodeEliminatestheNeedforExternalDiodesinZVSApplications ?LowerGateChargeResultsinSimpleDriveRequirements ?EnhanceddV/dtCapabilitiesOfferImprovedRuggedness ?HigherGateVoltageThresholdOffersImprovedNoiseImmunity ?Lead(Pb) | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
EFSeriesPowerMOSFETwithFastBodyDiode | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay |
詳細參數(shù)
- 型號：
IRFP21N60LPBF
- 功能描述：
MOSFET N-Chan 600V 21 Amp
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶體管極性：
N-Channel
- 汲極/源極擊穿電壓：
650 V
- 閘/源擊穿電壓：
25 V
- 漏極連續(xù)電流：
130 A 電阻汲極/源極
- RDS（導(dǎo)通）：
0.014 Ohms
- 配置：
Single
- 安裝風(fēng)格：
Through Hole
- 封裝/箱體：
Max247
- 封裝：
Tube
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
Vishay(威世) |
23+ |
標(biāo)準封裝 |
10048 |
原廠直銷,大量現(xiàn)貨庫存,交期快。價格優(yōu),支持賬期 |
詢價 | ||
Vishay Siliconix |
24+ |
TO-247AC |
30000 |
晶體管-分立半導(dǎo)體產(chǎn)品-原裝正品 |
詢價 | ||
VISHAY |
21+ |
TO-247-3 |
1925 |
原裝正品 有掛有貨 |
詢價 | ||
VISHAY |
12+/20+/21+ |
1325 |
TO-247-3 |
詢價 | |||
VISHAY |
23+ |
TO-247-3 |
2325 |
原裝現(xiàn)貨支持送檢 |
詢價 | ||
VishayIR |
24+ |
TO-247AC |
30 |
詢價 | |||
VISHAY |
12+ |
TO-247AC |
2600 |
原裝正品現(xiàn)貨庫存價優(yōu) |
詢價 | ||
VISHAY |
23+ |
TO220 |
7750 |
全新原裝優(yōu)勢 |
詢價 | ||
IRF |
23+ |
NA |
19960 |
只做進口原裝,終端工廠免費送樣 |
詢價 | ||
IR |
22+23+ |
TO-247 |
16470 |
絕對原裝正品全新進口深圳現(xiàn)貨 |
詢價 |
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