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IRFR120N

HEXFET Power MOSFET

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,p

IRF

International Rectifier

IRFR120N

The D-PAK is designed for surface mounting using vapor phase,infraredor wave soldering techniques.

Features VDS(V)=100V ID=9.4A(VGS=10V) RDS(ON)=210mW(VGS=10V)

UMWGuangdong Youtai Semiconductor Co., Ltd.

友臺(tái)半導(dǎo)體廣東友臺(tái)半導(dǎo)體有限公司

IRFR120N

MOSFET

Description TheD-PAKisdesignedforsurfacemounting usingvaporphase,infraredorwavesoldering techniques.Powerdissipationlevelsupto 1.5wattsarepossibleintypicalsurfacemount applications. Features VDS(V)=100V ID=9.4A(VGS=10V) RDS(ON)=210mW(VGS=10V)

EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED

翊歐翊歐半導(dǎo)體

IRFR120N

N-Channel MOSFET Transistor

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IRFR120NPBF

Fast Switching

VDSS=100V RDS(on)=0.21? ID=9.4A Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedes

IRF

International Rectifier

IRFR120NPBF

Surface Mount (IRFR120N) Straight Lead (IRFU120N)

VDSS=100V RDS(on)=0.21? ID=9.4A Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedes

KERSEMI

Kersemi Electronic Co., Ltd.

IRFR120N-TP

N-Channel 100-V (D-S) MOSFET

Features @Ros=100m@VGS=10V ?SuperhighdensitycelldesignforextremelylowRDS(ON) ?Exceptionalon-resistanceandmaximumDCcurrent

TECHPUBLICTECH PUBLIC Electronics co LTD

臺(tái)舟電子臺(tái)舟電子股份有限公司

IRFR120NTR

The D-PAK is designed for surface mounting using vapor phase,infraredor wave soldering techniques.

Features VDS(V)=100V ID=9.4A(VGS=10V) RDS(ON)=210mW(VGS=10V)

UMWGuangdong Youtai Semiconductor Co., Ltd.

友臺(tái)半導(dǎo)體廣東友臺(tái)半導(dǎo)體有限公司

IRFR120NTR

MOSFET

Description TheD-PAKisdesignedforsurfacemounting usingvaporphase,infraredorwavesoldering techniques.Powerdissipationlevelsupto 1.5wattsarepossibleintypicalsurfacemount applications. Features VDS(V)=100V ID=9.4A(VGS=10V) RDS(ON)=210mW(VGS=10V)

EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED

翊歐翊歐半導(dǎo)體

IRFR120NCLPBF

Surface Mount (IRFR120N)

IRF

International Rectifier

詳細(xì)參數(shù)

  • 型號(hào)：

    IRFR120N

  • 制造商：

    International Rectifier

  • 功能描述：

    MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.21Ohm;ID 9.4A;D-Pak(TO-252AA);PD 48W

  • 功能描述：

    TRANS MOSFET N-CH 100V 9.4A 3PIN DPAK - Rail/Tube

  • 功能描述：

    MOSFET N D-PAK

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
IR
24+
TO-252(DPAK
12500
絕對(duì)原裝現(xiàn)貨,價(jià)格低,歡迎詢(xún)購(gòu)!
 詢(xún)價(jià)
IR(國(guó)際整流器)
2023+
N/A
4550
全新原裝正品
 詢(xún)價(jià)
IR
24+
TO 252
160866
明嘉萊只做原裝正品現(xiàn)貨
 詢(xún)價(jià)
IR
2024+
N/A
70000
柒號(hào)只做原裝 現(xiàn)貨價(jià)秒殺全網(wǎng)
 詢(xún)價(jià)
IR
3000
原裝正品現(xiàn)貨庫(kù)存價(jià)優(yōu)
 詢(xún)價(jià)
IR
05+
TO-252
15000
原裝進(jìn)口
 詢(xún)價(jià)
IR
23+
D-Pak
19526
詢(xún)價(jià)
IR
1415+
TO-252(DPAK)
28500
全新原裝正品,優(yōu)勢(shì)熱賣(mài)
 詢(xún)價(jià)
IR
24+
TO-252
57200
新進(jìn)庫(kù)存/原裝
 詢(xún)價(jià)
IR
13+
TO-252
19238
原裝分銷(xiāo)
 詢(xún)價(jià)
更多IRFR120N供應(yīng)商 更新時(shí)間2025-2-2 14:00:00

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