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IRFR210TRPBF

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFR210TRPBFA

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th

KERSEMI

Kersemi Electronic Co., Ltd.

IRFR210TRPBF-TP

Marking：FL210；Package：SOT223；N-Channel Enhancement Mode Power MOSFET

GENERALFEATURES Vos=200V =10A@Vos=10v. BRoson$1350@Vos=10V 507-223package.|

TECHPUBLICTECH PUBLIC Electronics co LTD

臺舟電子臺舟電子股份有限公司

IRFR210TRPBFA

Power MOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFR210TRPBF-BE3AB

Power MOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFR210TRR

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFR210TRRA

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th

KERSEMI

Kersemi Electronic Co., Ltd.

IRFR210TRRPBF

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFU210

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFU210

PowerMOSFET(Vdss=200V,Rds(on)=1.5ohm,Id=2.6A)

DESCRIPTION ThirdGenerationMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD-PAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thestraigh

IRF

International Rectifier

詳細參數(shù)

  • 型號：

    IRFR210TRPBF

  • 功能描述：

    MOSFET N-Chan 200V 2.6 Amp

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號品牌批號封裝庫存備注價格
VISHAY
2020+
TO-252
9600
百分百原裝正品 真實公司現(xiàn)貨庫存 本公司只做原裝 可
 詢價
IR
2020+
TO-252
22000
全新原裝正品 現(xiàn)貨庫存 價格優(yōu)勢
 詢價
Vishay Siliconix
24+
D-Pak
30000
晶體管-分立半導(dǎo)體產(chǎn)品-原裝正品
 詢價
VISHAY
2020+
TO-252
8000
只做自己庫存,全新原裝進口正品假一賠百,可開13%增
 詢價
VISHAY
21+
TO-252-3 (DPAK)
24000
原裝正品 有掛有貨
 詢價
VISHAY/威世
24+
TO-252
6098
只做原廠渠道 可追溯貨源
 詢價
VISHAY
21+
36000
TO-252-3 (DPAK)
 詢價
VISHAY
23+
TO-252-3 (DPAK)
20000
原裝現(xiàn)貨支持送檢
 詢價
Vishay(威世)
2249+
61564
二十余載金牌老企 研究所優(yōu)秀合供單位 您的原廠窗口
 詢價
INFINEON/英飛凌
21+
TO-252
10000
專營INFINEON/英飛凌全新原裝進口正品
 詢價
更多IRFR210TRPBF供應(yīng)商 更新時間2025-2-23 9:08:00

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