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IRFU210

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th

VishayVishay Siliconix

威世科技威世科技半導體

IRFU210

Power MOSFET(Vdss=200V, Rds(on)=1.5ohm, Id=2.6A)

DESCRIPTION ThirdGenerationMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD-PAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thestraigh

IRF

International Rectifier

IRFU210

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th

KERSEMI

Kersemi Electronic Co., Ltd.

IRFU210

Power MOSFET

FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?Surface-mount(IRFR210,SiHFR210) ?Straightlead(IRFU210,SiHFU210) ?Availableintapeandreel ?Fastswitching ?Easeofparalleling ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?9

VishayVishay Siliconix

威世科技威世科技半導體

IRFU210B

200V N-Channel MOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

IRFU210PBF

HEXFET POWER MOSFET

IRF

International Rectifier

IRFU210PBF

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th

VishayVishay Siliconix

威世科技威世科技半導體

IRFU210PBF

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th

KERSEMI

Kersemi Electronic Co., Ltd.

IRFU210PBF

Power MOSFET

VishayVishay Siliconix

威世科技威世科技半導體

IRFY210

N-ChannelMOSFETinaHermeticallysealed

SEME-LAB

Seme LAB

IRFY210C

N-ChannelMOSFETinaHermeticallysealed

SEME-LAB

Seme LAB

IRLM210

AdvancedPowerMOSFET

FEATURES ●AvalancheRuggedTechnology ●RuggedGateOxideTechnology ●LowerInputCapacitance ●ImprovedGateCharge ●ExtendedSafeOperatingArea ●LowerLeakageCurrent:10μA(Max.)@VDS=200V ●LowerRDS(ON):1.185?(Typ.)

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

IRLM210A

AdvancedPowerMOSFET

FEATURES ●AvalancheRuggedTechnology ●RuggedGateOxideTechnology ●LowerInputCapacitance ●ImprovedGateCharge ●ExtendedSafeOperatingArea ●LowerLeakageCurrent:10μA(Max.)@VDS=200V ●LowerRDS(ON):1.185?(Typ.)

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

IRLR210A

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IRLR210ATM

N-channelEnhancementModePowerMOSFET

Features ?VDS=200V,ID=30A RDS(ON)

BychipBYCHIP ELECTRONICS CO., LIMITED

百域芯深圳市百域芯科技有限公司

IRLRU210A

AdvancedPowerMOSFET

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

IRLU210A

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IS210

SmallOutlinePhotoDMOS-FETRelaywithHighLoadVoltageCapabilities

DESCRIPTION TheIS210isaminiature1-FormAsolidstaterelayina4pinSOPpackage.TheIS210utilisesMOSFETtechnologythatisopticallycoupledtoahighlyefficientGaAlAsinfraredlightemittingdiodes. FEATURES ?SOP4pinpackageforcompactPCBs ?Lowerdriverpowerrequirements ?

ISOCOM

ISOCOM COMPONENTS

IT210

ISOTABTRIACSELECTRICALLYISOLATED

[HUTSONINDUSTRIES]

ETC1List of Unclassifed Manufacturers

etc未分類制造商未分類制造商

IT210A

ISOTABTRIACSELECTRICALLYISOLATED

[HUTSONINDUSTRIES]

ETC1List of Unclassifed Manufacturers

etc未分類制造商未分類制造商

詳細參數

  • 型號：

    IRFU210

  • 功能描述：

    MOSFET N-Chan 200V 2.6 Amp

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應商型號品牌批號封裝庫存備注價格
IR
23+
TO-251
4040
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IR
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IPAK
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IR
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IR
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IR
14
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IR
01+
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IOR
23+
SOT89/3
7000
絕對全新原裝!100%保質量特價!請放心訂購!
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IR
23+
TO-251
35890
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IR
23+
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3000
全新原裝
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ir
24+
N/A
6980
原裝現貨,可開13%稅票
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更多IRFU210供應商 更新時間2024-10-28 10:52:00

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