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IRFU210B

200V N-Channel MOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRFU210B

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=2.7A@TC=25℃ ·DrainSourceVoltage-VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.5Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRFU210PBF

HEXFETPOWERMOSFET

IRF

International Rectifier

IRFU210PBF

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFU210PBF

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th

KERSEMI

Kersemi Electronic Co., Ltd.

IRFU210PBF

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFY210

N-ChannelMOSFETinaHermeticallysealed

SEME-LAB

Seme LAB

IRFY210C

N-ChannelMOSFETinaHermeticallysealed

SEME-LAB

Seme LAB

IRLM210

AdvancedPowerMOSFET

FEATURES ●AvalancheRuggedTechnology ●RuggedGateOxideTechnology ●LowerInputCapacitance ●ImprovedGateCharge ●ExtendedSafeOperatingArea ●LowerLeakageCurrent:10μA(Max.)@VDS=200V ●LowerRDS(ON):1.185?(Typ.)

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRLM210A

AdvancedPowerMOSFET

FEATURES ●AvalancheRuggedTechnology ●RuggedGateOxideTechnology ●LowerInputCapacitance ●ImprovedGateCharge ●ExtendedSafeOperatingArea ●LowerLeakageCurrent:10μA(Max.)@VDS=200V ●LowerRDS(ON):1.185?(Typ.)

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

詳細(xì)參數(shù)

  • 型號(hào)：

    IRFU210B

  • 制造商：

    FAIRCHILD

  • 制造商全稱：

    Fairchild Semiconductor

  • 功能描述：

    200V N-Channel MOSFET

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
FAIRCHILD/仙童
25+
TO 251
154871
明嘉萊只做原裝正品現(xiàn)貨
 詢價(jià)
仙童
05+
TO-251
5000
原裝進(jìn)口
 詢價(jià)
FAIRCHILD
23+
TO-251
9526
詢價(jià)
IR/FSC
23+
TO-251
9500
專業(yè)優(yōu)勢(shì)供應(yīng)
 詢價(jià)
原廠
23+
TO-251
5000
原裝正品,假一罰十
 詢價(jià)
FAIRCHILD
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
 詢價(jià)
23+
TO-251
65480
詢價(jià)
FAIRCHILD/仙童
22+
TO-251
20000
保證原裝正品,假一陪十
 詢價(jià)
FAIRCHILD/仙童
2447
TO-251
100500
一級(jí)代理專營(yíng)品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,長(zhǎng)期排單到貨
 詢價(jià)
FAIRCHILD/仙童
23+
TO-251
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價(jià)
更多IRFU210B供應(yīng)商 更新時(shí)間2025-5-5 10:30:00

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