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IRFU214

Power MOSFET(Vdss=250V, Rds(on)=2.0ohm, Id=2.2A)

HEXFET?PowerMOSFET VDSS=250V RDS(on)=2.0Ω ID=2.2A

IRF

International Rectifier

IRFU214

2.2A, 250V, 2.000 Ohm, N-Channel Power MOSFETs

TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistorsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.TheyareadvancedpowerMOSFETsaredesignedforuseinapplicationssuchasswitchingregulators

Intersil

Intersil Corporation

IRFU214

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD-PAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thes

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFU214

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD-PAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thes

KERSEMI

Kersemi Electronic Co., Ltd.

IRFU214

Power MOSFET

FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?Surface-mount(IRFR214,SiHFR214) ?Straightlead(IRFU214,SiHFU214) ?Availableintapeandreel ?Fastswitching ?Easeofparalleling ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?9

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFU214

Marking：IPAK；Package：TO-251；iscN-Channel MOSFET Transistor

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IRFU214

Power MOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFU214B

250V N-Channel MOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRFU214PBF

HEXFET? Power MOSFET

HEXFET?PowerMOSFET ?DynamicdV/dtRating ?RepetitiveAvalancheRated ?SurfaceMount(IRFR214) ?StraightLead(IRFU214) ?AvailableinTape&Reel ?FastSwitching ?EaseofParalleling ?Lead-Free

IRF

International Rectifier

IRFU214PBF

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD-PAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thes

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

詳細(xì)參數(shù)

  • 型號(hào)：

    IRFU214

  • 功能描述：

    MOSFET N-Chan 250V 2.2 Amp

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
IR
24+
TO-251
1868
只做原廠渠道 可追溯貨源
 詢價(jià)
Vishay
2024+
TO-251-3
32560
原裝優(yōu)勢(shì)絕對(duì)有貨
 詢價(jià)
IR
23+
TO-251
35890
詢價(jià)
IR
06+
TO-251
12000
原裝庫(kù)存
 詢價(jià)
IR
24+
TO-251AA
8866
詢價(jià)
華晶
2012+
TO251
999999
全新原裝進(jìn)口自己庫(kù)存優(yōu)勢(shì)
 詢價(jià)
IR
2015+
TO251
19898
專業(yè)代理原裝現(xiàn)貨,特價(jià)熱賣!
 詢價(jià)
IR
23+
TO263-3
1058
特價(jià)庫(kù)存
 詢價(jià)
IR
2018+
TO251
6528
只做原裝正品假一賠十!只要網(wǎng)上有上百分百有庫(kù)存放心
 詢價(jià)
IRF
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
 詢價(jià)
更多IRFU214供應(yīng)商 更新時(shí)間2025-1-24 16:36:00

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