IRFU214中文資料Intersil數(shù)據(jù)手冊PDF規(guī)格書
IRFU214規(guī)格書詳情
These are N-Channel enhancement mode silicon gate power field effect transistors designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. They are advanced power MOSFETs are designed for use in applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for highpower bipolar switching transistors requiring high speed and low gate-drive power. These transistors can be operated directly from integrated circuits.
Features
? 2.2A, 250V
? rDS(ON) = 2.000?
? Single Pulse Avalanche Energy Rated
? SOA is Power Dissipation Limited
? Nanosecond Switching Speeds
? High Input Impedance
? 150°C Operating Temperature
? Related Literature
- TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”
產(chǎn)品屬性
- 型號:
IRFU214
- 功能描述:
MOSFET N-Chan 250V 2.2 Amp
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶體管極性:
N-Channel
- 汲極/源極擊穿電壓:
650 V
- 閘/源擊穿電壓:
25 V
- 漏極連續(xù)電流:
130 A 電阻汲極/源極
- RDS(導(dǎo)通):
0.014 Ohms
- 配置:
Single
- 安裝風(fēng)格:
Through Hole
- 封裝/箱體:
Max247
- 封裝:
Tube
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
IR |
19+ |
6500 |
進口原裝現(xiàn)貨 |
詢價 | |||
VISHAY/威世 |
23+ |
NA/ |
88 |
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詢價 | ||
FSC |
2016+ |
SOT251 |
6000 |
只做原裝,假一罰十,公司可開17%增值稅發(fā)票! |
詢價 | ||
VISHAY/威世 |
2020+ |
NA |
80000 |
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詢價 | ||
IR |
22+23+ |
TO-251 |
27295 |
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詢價 | ||
IR |
06+ |
TO-251 |
1868 |
詢價 | |||
IR |
23+ |
QFP |
3200 |
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詢價 | ||
IR |
24+ |
TO-251 |
1868 |
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詢價 | ||
IR |
24+ |
TO-251AA |
8866 |
詢價 | |||
IR |
24 |
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詢價 |