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IRFR2405TRPBF

Advanced Process Technology

Description SeventhGenerationHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellkn

IRF

International Rectifier

IRFR2405TRPBF

N-channel Enhancement Mode Power MOSFET

Features ?VDS=60V,ID=50A RDS(ON)

BychipBYCHIP ELECTRONICS CO., LIMITED

百域芯深圳市百域芯科技有限公司

IRFRSLASHU2405

SurfaceMount(IRFR2405)

Description TheD-Pakisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thestraightleadversion(IRFUseries)isforthrough-holemountingapplications.Powerdissipationlevelsupto1.5wattsarepossibleintypicalsurfacemountapplications. ●Surf

KERSEMI

Kersemi Electronic Co., Ltd.

IRFU2405

PowerMOSFET(Vdss=55V,Rds(on)=0.016ohm,Id=56A??

Description SeventhGenerationHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellkn

IRF

International Rectifier

IRFU2405

SurfaceMount(IRFR2405)

KERSEMI

Kersemi Electronic Co., Ltd.

IRFU2405

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IRFU2405PBF

HEXFETPowerMOSFET

Description SeventhGenerationHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellkn

IRF

International Rectifier

IRFU2405PbF

SurfaceMount(IRFR2405)

IRF

International Rectifier

IRFU2405PBF

AdvancedProcessTechnology

Description SeventhGenerationHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellkn

IRF

International Rectifier

IRFU2405PBF

AdvancedProcessTechnology

Description SeventhGenerationHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellkn

KERSEMI

Kersemi Electronic Co., Ltd.

詳細參數(shù)

  • 型號：

    IRFR2405TRPBF

  • 功能描述：

    MOSFET 55V N-CH HEXFET 16mOhms 70nC

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應商型號品牌批號封裝庫存備注價格
IR
2020+
SOP-252
22000
全新原裝正品 現(xiàn)貨庫存 價格優(yōu)勢
 詢價
Infineon Technologies
24+
D-Pak
30000
晶體管-分立半導體產品-原裝正品
 詢價
IR
15+
原廠原裝
8000
進口原裝現(xiàn)貨假一賠十
 詢價
IR
SOT-252
30216
提供BOM表配單TEL:0755-83759919QQ:2355705587杜S
 詢價
IR
16+
SOP-252
6263
全新原裝/深圳現(xiàn)貨庫2
 詢價
INFINEON/英飛凌
24+
TO-252
18075
原裝進口假一罰十
 詢價
INFINEON/英飛凌
20+
TO-252
6000
進口原裝假一賠十支持含稅
 詢價
IR
2021+
D-PAK
9450
原裝現(xiàn)貨。
 詢價
IR
20+
TO-252
15100
全新原裝公司現(xiàn)貨
詢價
INFINEON/英飛凌
24+
TO-252
14000
只做原廠渠道 可追溯貨源
 詢價
更多IRFR2405TRPBF供應商 更新時間2025-3-26 9:02:00

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