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IRFU2905Z

AUTOMOTIVEMOSFET

VDSS=55V RDS(on)=14.5m? ID=42A Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionope

IRF

International Rectifier

IRFU2905Z

AdvancedProcessTechnology

KERSEMI

Kersemi Electronic Co., Ltd.

IRFU2905Z

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IRFU2905ZPBF

HEXFET?PowerMOSFET(VDSS=55V,RDS(on)=14.5m廓,ID=42A)

VDSS=55V RDS(on)=14.5m? ID=42A Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionope

IRF

International Rectifier

IRFU2905ZPBF

AUTOMOTIVEMOSFET

KERSEMI

Kersemi Electronic Co., Ltd.

IRLR/U2905

HEXFETPowerMOSFET

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,p

IRF

International Rectifier

IRLR2905

HEXFETPowerMOSFET

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,p

IRF

International Rectifier

IRLR2905

AdvancedProcessTechnology

KERSEMI

Kersemi Electronic Co., Ltd.

IRLR2905

N-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IRLR2905

60VN-ChannelEnhancementModePowerMOSFET

GeneralDescription TheIRLR2905TRusesadvancedtrenchtechnology anddesigntoprovideexcellentRDS(ON)withlowgate charge.Itcanbeusedinawidevarietyofapplications. Features VDS=60V,ID=30A RDS(ON),23mΩ(Typ)@VGS=10V RDS(ON),29mΩ(Typ)@VGS=4.5V AdvancedTrenchTechnol

EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED

翊歐翊歐半導體

IRLR2905PBF

HEXFETPowerMOSFET

VDSS=55V RDS(on)=0.027? ID=42A Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesign

IRF

International Rectifier

IRLR2905PBF

Logic-LevelGateDrive

IRF

International Rectifier

IRLR2905TR

60VN-ChannelEnhancementModePowerMOSFET

GeneralDescription TheUMWIRLR2905TRusesadvancedtrenchtechnology anddesigntoprovideexcellentRDS(ON)withlowgate charge.Itcanbeusedinawidevarietyofapplications. Features VDS=60V,ID=30A RDS(ON),23mΩ(Typ)@VGS=10V RDS(ON),29mΩ(Typ)@VGS=4.5V AdvancedTrenchTec

UMWGuangdong Youtai Semiconductor Co., Ltd.

友臺半導體廣東友臺半導體有限公司

IRLR2905TR

60VN-ChannelEnhancementModePowerMOSFET

GeneralDescription TheIRLR2905TRusesadvancedtrenchtechnology anddesigntoprovideexcellentRDS(ON)withlowgate charge.Itcanbeusedinawidevarietyofapplications. Features VDS=60V,ID=30A RDS(ON),23mΩ(Typ)@VGS=10V RDS(ON),29mΩ(Typ)@VGS=4.5V AdvancedTrenchTechnol

EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED

翊歐翊歐半導體

IRLR2905TRPBF

N-Channel60-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導體微碧半導體（臺灣）有限公司

IRLR2905TRPBF

AdvancedProcessTechnology

IRF

International Rectifier

IRLR2905Z

AUTOMOTIVEMOSFET

Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimp

IRF

International Rectifier

IRLR2905Z

AdvancedProcessTechnology

KERSEMI

Kersemi Electronic Co., Ltd.

IRLR2905Z

N-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IRLR2905ZPBF

HEXFETPowerMOSFET

Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimpro

IRF

International Rectifier

詳細參數(shù)

  • 型號：

    IRFR2905ZTRLPBF

  • 功能描述：

    MOSFET MOSFT 55V 59A 14.5mOhm 29nC

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應商型號品牌批號封裝庫存備注價格
IR
23+
TO-252
11846
一級代理商現(xiàn)貨批發(fā),原裝正品,假一罰十
 詢價
International Rectifier
2022+
1
全新原裝 貨期兩周
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Infineon Technologies
21+
D-Pak
3000
100%進口原裝!長期供應!絕對優(yōu)勢價格(誠信經(jīng)營)!
 詢價
INFINEON
1503+
TO-252
3000
就找我吧!--邀您體驗愉快問購元件!
 詢價
Infineon
22+
NA
2118
加我QQ或微信咨詢更多詳細信息,
 詢價
Infineon Technologies
22+
TO2523 DPak (2 Leads + Tab) SC
9000
原廠渠道,現(xiàn)貨配單
 詢價
Infineon Technologies
21+
TO2523 DPak (2 Leads + Tab) SC
13880
公司只售原裝,支持實單
 詢價
Infineon Technologies
23+
TO2523 DPak (2 Leads + Tab) SC
9000
原裝正品，支持實單
 詢價
Infineon Technologies
24+
原裝
5000
原裝正品,提供BOM配單服務
 詢價
Infineon Technologies
2022+
TO-252-3,DPak(2 引線 + 接片
38550
全新原裝 支持表配單 中國著名電子元器件獨立分銷
 詢價
更多IRFR2905ZTRLPBF供應商 更新時間2025-1-10 15:21:00

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