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IRLR/U2905

HEXFET Power MOSFET

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,p

IRF

International Rectifier

IRLR2905

HEXFETPowerMOSFET

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,p

IRF

International Rectifier

IRLR2905

AdvancedProcessTechnology

KERSEMI

Kersemi Electronic Co., Ltd.

IRLR2905

N-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRLR2905

60VN-ChannelEnhancementModePowerMOSFET

GeneralDescription TheIRLR2905TRusesadvancedtrenchtechnology anddesigntoprovideexcellentRDS(ON)withlowgate charge.Itcanbeusedinawidevarietyofapplications. Features VDS=60V,ID=30A RDS(ON),23mΩ(Typ)@VGS=10V RDS(ON),29mΩ(Typ)@VGS=4.5V AdvancedTrenchTechnol

EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED

翊歐翊歐半導(dǎo)體

IRLR2905PBF

HEXFETPowerMOSFET

VDSS=55V RDS(on)=0.027? ID=42A Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesign

IRF

International Rectifier

IRLR2905PBF

Logic-LevelGateDrive

IRF

International Rectifier

IRLR2905TR

60VN-ChannelEnhancementModePowerMOSFET

GeneralDescription TheUMWIRLR2905TRusesadvancedtrenchtechnology anddesigntoprovideexcellentRDS(ON)withlowgate charge.Itcanbeusedinawidevarietyofapplications. Features VDS=60V,ID=30A RDS(ON),23mΩ(Typ)@VGS=10V RDS(ON),29mΩ(Typ)@VGS=4.5V AdvancedTrenchTec

UMWGuangdong Youtai Semiconductor Co., Ltd.

友臺半導(dǎo)體廣東友臺半導(dǎo)體有限公司

IRLR2905TR

60VN-ChannelEnhancementModePowerMOSFET

GeneralDescription TheIRLR2905TRusesadvancedtrenchtechnology anddesigntoprovideexcellentRDS(ON)withlowgate charge.Itcanbeusedinawidevarietyofapplications. Features VDS=60V,ID=30A RDS(ON),23mΩ(Typ)@VGS=10V RDS(ON),29mΩ(Typ)@VGS=4.5V AdvancedTrenchTechnol

EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED

翊歐翊歐半導(dǎo)體

IRLR2905TRPBF

AdvancedProcessTechnology

IRF

International Rectifier

IRLR2905TRPBF

N-Channel60-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺灣)有限公司

IRLR2905Z

AUTOMOTIVEMOSFET

Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimp

IRF

International Rectifier

IRLR2905Z

AdvancedProcessTechnology

KERSEMI

Kersemi Electronic Co., Ltd.

IRLR2905Z

N-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRLR2905ZPBF

HEXFETPowerMOSFET

Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimpro

IRF

International Rectifier

IRLR2905ZPBF

AdvancedProcessTechnology

IRF

International Rectifier

IRLR2905ZPBF

AdvancedProcessTechnology

IRF

International Rectifier

IRLR2905ZTRLPBF

AdvancedProcessTechnology

IRF

International Rectifier

IRLR2905ZTRPBF

LogicLevel

IRF

International Rectifier

IRLR2905ZTRPBF

N-Channel60V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺灣)有限公司

供應(yīng)商型號品牌批號封裝庫存備注價格
IRF
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
詢價
IR
22+
6000
終端可免費(fèi)供樣,支持BOM配單
詢價
IR
23+
8000
專注配單,只做原裝進(jìn)口現(xiàn)貨
詢價
IR
23+
8000
只做原裝現(xiàn)貨
詢價
IR
23+
7000
詢價
更多IRLR/U2905供應(yīng)商 更新時間2024-12-24 13:35:00