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IRLR2905PBF中文資料IRF數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)
IRLR2905PBF規(guī)格書(shū)詳情
VDSS= 55V
RDS(on)= 0.027?
ID= 42A
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.
Logic-Level Gate Drive
Ultra Low On-Resistance
Surface Mount (IRLR2905)
Straight Lead (IRLU2905)
Advanced Process Technology
Fast Switching
Fully Avalanche Rated
Lead-Free
產(chǎn)品屬性
- 型號(hào):
IRLR2905PBF
- 功能描述:
MOSFET 55V 1 N-CH HEXFET 27mOhms 32nC
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶體管極性:
N-Channel
- 汲極/源極擊穿電壓:
650 V
- 閘/源擊穿電壓:
25 V
- 漏極連續(xù)電流:
130 A 電阻汲極/源極
- RDS(導(dǎo)通):
0.014 Ohms
- 配置:
Single
- 安裝風(fēng)格:
Through Hole
- 封裝/箱體:
Max247
- 封裝:
Tube
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
IR |
23+ |
TO-252 |
35896 |
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詢價(jià) | ||
IR |
24+ |
TO-252 |
501044 |
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1822+ |
TO252 |
9852 |
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2021+ |
TO-252 |
3500 |
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IR |
23+ |
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21000 |
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IR |
23+ |
TO-252 |
11846 |
一級(jí)代理商現(xiàn)貨批發(fā),原裝正品,假一罰十 |
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2022 |
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80000 |
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IR |
21+ |
原廠封裝 |
1638 |
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IR |
2020+ |
TO-252 |
80000 |
只做自己庫(kù)存,全新原裝進(jìn)口正品假一賠百,可開(kāi)13%增 |
詢價(jià) |