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IRLR120

HEXFET Power MOSFET

Description ThirdGenerationPowerMOSFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingt

IRF

International Rectifier

IRLR120

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRLR120

Power MOSFET

FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?Surface-mount(IRLR120,SiHLR120) ?Straightlead(IRLU120,SiHLU120) ?AvailableintapeandreMel ?Logic-levelgatedrive ?RDS(on)specifiedatVGS=4Vand5V ?Materialcategorization:fordefinitionsofcompliance ple

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRLR120

Power MOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRLR120

Marking：DPAK；Package：TO-252；iscN-Channel MOSFET Transistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRLR120_V01

Power MOSFET

FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?Surface-mount(IRLR120,SiHLR120) ?Straightlead(IRLU120,SiHLU120) ?AvailableintapeandreMel ?Logic-levelgatedrive ?RDS(on)specifiedatVGS=4Vand5V ?Materialcategorization:fordefinitionsofcompliance ple

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRLR120ATF

N-channel Enhancement Mode Power MOSFET

Features ?VDS=100V,ID=18.1A RDS(ON)

BychipBYCHIP ELECTRONICS CO., LIMITED

百域芯深圳市百域芯科技有限公司

IRLR120NPBF

HEXFET? Power MOSFET

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,p

IRF

International Rectifier

IRLR120NTR

Advanced Process Technology

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,

IRF

International Rectifier

IRLR120NTR

Marking：LR120N；Package：TO-252；100V N-Channel MOSFET

VDS(V)=100V ID=10A(VGS=10V) RDS(ON)

UMWGuangdong Youtai Semiconductor Co., Ltd.

友臺半導(dǎo)體廣東友臺半導(dǎo)體有限公司

詳細(xì)參數(shù)

  • 型號：

    IRLR120

  • 功能描述：

    MOSFET N-Chan 100V 7.7 Amp

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號品牌批號封裝庫存備注價格
IR
24+
TO-252
20000
只做原廠渠道 可追溯貨源
 詢價
IR
24+
TO-252
501040
免費送樣原盒原包現(xiàn)貨一手渠道聯(lián)系
 詢價
IR
2024+
N/A
70000
柒號只做原裝 現(xiàn)貨價秒殺全網(wǎng)
 詢價
IR
05+
原廠原裝
951
只做全新原裝真實現(xiàn)貨供應(yīng)
 詢價
IR
23+
D-PAK
19526
詢價
IR
24+
TO-252
21000
詢價
IR
23+
TO-252
9500
專業(yè)優(yōu)勢供應(yīng)
 詢價
IRF
23+
NA
19960
只做進口原裝,終端工廠免費送樣
 詢價
IR
19+
TO-252
75254
原廠代理渠道,每一顆芯片都可追溯原廠；
 詢價
IR
24+
TO-252
2987
只售原裝自家現(xiàn)貨!誠信經(jīng)營!歡迎來電!
 詢價
更多IRLR120供應(yīng)商 更新時間2025-3-13 16:36:00

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