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IRLR120NTRPBF

SurfaceMount(IRLR120N)

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,p

IRF

International Rectifier

IRLR120NTRPBF

N-Channel100V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司

IRLR120PBF

HEXFETPowerMOSFET

IRF

International Rectifier

IRLR120PBF

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRLR120TRL

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRLR120TRLPBF

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRLR120TRRPBF

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRLRU120A

AdvancedPowerMOSFET

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRLRU120N

PowerMOSFET(Vdss=100V,Rds(on)=0.185ohm,Id=10A)

IRF

International Rectifier

IRLU120

PowerMOSFET(Vdss=100V,Rds(on)=0.185ohm,Id=10A)

IRF

International Rectifier

詳細(xì)參數(shù)

  • 型號：

    IRLR120NTRLPBF

  • 功能描述：

    MOSFET MOSFT 100V 11A 185mOhm 13.3nC LogLv

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號品牌批號封裝庫存備注價格
Infineon Technologies
24+
D-Pak
30000
晶體管-分立半導(dǎo)體產(chǎn)品-原裝正品
 詢價
Infineon
20+
N/A
3000
確保原裝現(xiàn)貨,實單價格支持!
 詢價
IR
24+
D-pak
20000
只做原廠渠道 可追溯貨源
 詢價
Infineon(英飛凌)
23+
N/A
12000
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
 詢價
INFINEON TECHNOLOGIES AG
23+
SMD
918000
明嘉萊只做原裝正品現(xiàn)貨
 詢價
INFINEON
22+
原封裝
81220
只做原裝進(jìn)口貨
 詢價
Infineon(英飛凌)
23+
TO-252
9908
支持大陸交貨,美金交易。原裝現(xiàn)貨庫存。
 詢價
INFINEON
24+
原封裝
81220
鄭重承諾只做原裝進(jìn)口現(xiàn)貨
 詢價
IOR
2016+
SOT252
2600
只做原裝,假一罰十,公司可開17%增值稅發(fā)票!
 詢價
IR
19+
SOT252
75256
原廠代理渠道,每一顆芯片都可追溯原廠；
 詢價
更多IRLR120NTRLPBF供應(yīng)商 更新時間2025-1-22 11:12:00

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