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IRLR120NTRPBF

Surface Mount (IRLR120N)

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,p

IRF

International Rectifier

IRLR120NTRPBF

N-Channel 100 V (D-S) MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司

IRLR120PBF

HEXFETPowerMOSFET

IRF

International Rectifier

IRLR120PBF

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRLR120TRL

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRLR120TRLPBF

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRLR120TRRPBF

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRLRU120A

AdvancedPowerMOSFET

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRLRU120N

PowerMOSFET(Vdss=100V,Rds(on)=0.185ohm,Id=10A)

IRF

International Rectifier

IRLU120

PowerMOSFET(Vdss=100V,Rds(on)=0.185ohm,Id=10A)

IRF

International Rectifier

詳細(xì)參數(shù)

  • 型號(hào)：

    IRLR120NTRPBF

  • 功能描述：

    MOSFET 100V 1 N-CH HEXFET 185mOhms 13.3nC

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
IR
13+
TO-252
100000
深圳市勤思達(dá)科技有限公司主營(yíng)IR系列全新原裝正品,公司現(xiàn)貨供應(yīng)IRLR120NTRPBF,絕對(duì)正品,歡迎咨詢洽談。
 詢價(jià)
IR
23+
TO-252
20540
保證進(jìn)口原裝現(xiàn)貨假一賠十
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INFINEON
22+
TO-252-2
30000
原裝正品可支持驗(yàn)貨,歡迎咨詢
 詢價(jià)
INFINEON
22+
sot
6600
正品渠道現(xiàn)貨,終端可提供BOM表配單。
 詢價(jià)
Infineon Technologies
24+
D-Pak
30000
晶體管-分立半導(dǎo)體產(chǎn)品-原裝正品
 詢價(jià)
IR
15+
原廠原裝
16000
進(jìn)口原裝現(xiàn)貨假一賠十
 詢價(jià)
IR
16+
TO-252
36000
原裝正品,優(yōu)勢(shì)庫(kù)存81
 詢價(jià)
IR
23+
SOT-252
65400
詢價(jià)
INFINEON
22+
TO-252
10000
原裝正品!!!優(yōu)勢(shì)庫(kù)存!0755-83210901
 詢價(jià)
INFINEON
23+
原封 □
21500
INFINEON優(yōu)勢(shì) /原裝現(xiàn)貨長(zhǎng)期供應(yīng)現(xiàn)貨支持
 詢價(jià)
更多IRLR120NTRPBF供應(yīng)商 更新時(shí)間2025-2-1 11:03:00

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