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IRLR3105PBF

Logic-Level Gate Drive

Description ThisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveavalancherating.Thesefeaturescom

IRF

International Rectifier

IRLR3105PBF

AUTOMOTIVE MOSFET

Description ThisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveavalancherating.Thesefeaturescom

IRF

International Rectifier

IRLR3105PBF

Advanced Process Technology

IRF

International Rectifier

IRLR3105PBF_15

Advanced Process Technology

IRF

International Rectifier

IRLR3105TRPBF

Logic-LevelGateDrive

Description ThisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveavalancherating.Thesefeaturescom

IRF

International Rectifier

IRLR3105TRPBF

N-Channel60-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導體微碧半導體（臺灣）有限公司

IRLU3105

AUTOMOTIVEMOSFET

IRF

International Rectifier

IRLU3105

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IRLU3105PBF

AUTOMOTIVEMOSFET

Description ThisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveavalancherating.Thesefeaturescom

IRF

International Rectifier

IRLU3105PBF

Logic-LevelGateDrive

Description ThisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveavalancherating.Thesefeaturescom

IRF

International Rectifier

詳細參數(shù)

  • 型號：

    IRLR3105PBF

  • 功能描述：

    MOSFET 55V 1 N-CH HEXFET 37mOhms 13.3nC

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應商型號品牌批號封裝庫存備注價格
IR
24+
D-pak
20000
只做原廠渠道 可追溯貨源
 詢價
IR
24+
DPAK
5000
全現(xiàn)原裝公司現(xiàn)貨
 詢價
IR
2020+
原廠封裝
350000
100%進口原裝正品公司現(xiàn)貨庫存
 詢價
Infineon
18+
NA
3000
進口原裝正品優(yōu)勢供應
 詢價
IR
23+
TO-252
11846
一級代理商現(xiàn)貨批發(fā),原裝正品,假一罰十
 詢價
IR
24+
D-PAK
90000
一級代理商進口原裝現(xiàn)貨、價格合理
 詢價
IR
23+
TO-252
5000
原裝正品現(xiàn)貨
 詢價
IR
20+
DPAK
36900
原裝優(yōu)勢主營型號-可開原型號增稅票
 詢價
IR
2020+
TO-252
80000
只做自己庫存,全新原裝進口正品假一賠百,可開13%增
 詢價
International Rectifier
2022+
1
全新原裝 貨期兩周
 詢價
更多IRLR3105PBF供應商 更新時間2025-1-21 16:36:00

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