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IRLR2703PBF

Logic-Level Gate Drive

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownf

IRF

International Rectifier

IRLR2703PBF

Logic-Level Gate Drive

IRF

International Rectifier

IRLR2703PBF_15

Logic-Level Gate Drive

IRF

International Rectifier

IRLR2703TRPBF

Logic-LevelGateDrive

IRF

International Rectifier

IRLRSLASHU2703

POWERMOSFET

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellkn

IRF

International Rectifier

IRLU2703

POWERMOSFET

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellkn

IRF

International Rectifier

IRLU2703

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IRLU2703PBF

Logic-LevelGateDrive

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownf

IRF

International Rectifier

IRLU2703PBF

Logic-LevelGateDrive

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownf

IRF

International Rectifier

KA2703BDTF

EarthLeakageDetector

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

詳細(xì)參數(shù)

  • 型號(hào):

    IRLR2703PBF

  • 功能描述:

    MOSFET 30V 1 N-CH HEXFET 45mOhms 6.2nC

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
Infineon(英飛凌)
23+
TO-252
7793
支持大陸交貨,美金交易。原裝現(xiàn)貨庫(kù)存。
詢價(jià)
IR
2020+
原廠封裝
350000
100%進(jìn)口原裝正品公司現(xiàn)貨庫(kù)存
詢價(jià)
Infineon
24+
NA
3000
進(jìn)口原裝正品優(yōu)勢(shì)供應(yīng)
詢價(jià)
IR
23+
TO-252
11846
一級(jí)代理商現(xiàn)貨批發(fā),原裝正品,假一罰十
詢價(jià)
IR
24+
D-PAK
90000
一級(jí)代理商進(jìn)口原裝現(xiàn)貨、價(jià)格合理
詢價(jià)
IR
20+
DPAK
36900
原裝優(yōu)勢(shì)主營(yíng)型號(hào)-可開原型號(hào)增稅票
詢價(jià)
International Rectifier
2022+
1
全新原裝 貨期兩周
詢價(jià)
IR
24+
65230
詢價(jià)
IR
08+
D-pak
20000
普通
詢價(jià)
INFINEON
1503+
TO-252
3000
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更多IRLR2703PBF供應(yīng)商 更新時(shí)間2025-3-11 14:52:00