首頁>IRLR2905ZPBF>規(guī)格書詳情
IRLR2905ZPBF中文資料IRF數(shù)據(jù)手冊PDF規(guī)格書
IRLR2905ZPBF規(guī)格書詳情
Description
Specifically designed for Automotive applications, this HEXFET? Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
Features
? Logic Level
? Advanced Process Technology
? Ultra Low On-Resistance
? 175°C Operating Temperature
? Fast Switching
? Repetitive Avalanche Allowed up to Tjmax
? Lead-Free
產(chǎn)品屬性
- 型號：
IRLR2905ZPBF
- 功能描述：
MOSFET 55V 1 N-CH HEXFET 27mOhms 32nC
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶體管極性：
N-Channel
- 汲極/源極擊穿電壓：
650 V
- 閘/源擊穿電壓：
25 V
- 漏極連續(xù)電流：
130 A 電阻汲極/源極
- RDS（導(dǎo)通）：
0.014 Ohms
- 配置：
Single
- 安裝風(fēng)格：
Through Hole
- 封裝/箱體：
Max247
- 封裝：
Tube
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
IR |
21+ |
TO252 |
20000 |
原裝現(xiàn)貨假一罰十 |
詢價 | ||
INFINEON/英飛凌 |
2407+ |
con |
10750 |
只有原裝!量大可以訂!一片起賣! |
詢價 | ||
Infineon Technologies |
22+ |
TO2523 DPak (2 Leads + Tab) SC |
9000 |
原廠渠道,現(xiàn)貨配單 |
詢價 | ||
IR |
23+ |
TO-252 |
35901 |
##公司主營品牌長期供應(yīng)100%原裝現(xiàn)貨可含稅提供技術(shù) |
詢價 | ||
IR |
24+ |
TO-252 |
501047 |
免費(fèi)送樣原盒原包現(xiàn)貨一手渠道聯(lián)系 |
詢價 | ||
IR |
2021+ |
TO-252 |
3500 |
十年專營原裝現(xiàn)貨,假一賠十 |
詢價 | ||
IR |
24+ |
TO-252 |
975 |
詢價 | |||
IR |
23+ |
DPAK |
10000 |
公司只做原裝正品 |
詢價 | ||
IR |
23+ |
TO-252 |
11846 |
一級代理商現(xiàn)貨批發(fā),原裝正品,假一罰十 |
詢價 | ||
IR |
2022 |
DPAK |
80000 |
原裝現(xiàn)貨,OEM渠道,歡迎咨詢 |
詢價 |
