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IRLR2905ZPBF中文資料IRF數(shù)據(jù)手冊PDF規(guī)格書
IRLR2905ZPBF規(guī)格書詳情
Description
Specifically designed for Automotive applications, this HEXFET? Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
Features
? Logic Level
? Advanced Process Technology
? Ultra Low On-Resistance
? 175°C Operating Temperature
? Fast Switching
? Repetitive Avalanche Allowed up to Tjmax
? Lead-Free
產(chǎn)品屬性
- 型號：
IRLR2905ZPBF
- 功能描述：
MOSFET 55V 1 N-CH HEXFET 27mOhms 32nC
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶體管極性：
N-Channel
- 汲極/源極擊穿電壓：
650 V
- 閘/源擊穿電壓：
25 V
- 漏極連續(xù)電流：
130 A 電阻汲極/源極
- RDS（導(dǎo)通）：
0.014 Ohms
- 配置：
Single
- 安裝風(fēng)格：
Through Hole
- 封裝/箱體：
Max247
- 封裝：
Tube
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
IR |
24+ |
TO-252 |
975 |
詢價(jià) | |||
IR |
23+ |
DPAK |
10000 |
公司只做原裝正品 |
詢價(jià) | ||
IR |
21+ |
TO-252 |
1574 |
詢價(jià) | |||
Infineon |
18+ |
NA |
3000 |
進(jìn)口原裝正品優(yōu)勢供應(yīng) |
詢價(jià) | ||
INFINEO |
2020+ |
TO-252 |
80000 |
只做自己庫存,全新原裝進(jìn)口正品假一賠百,可開13%增 |
詢價(jià) | ||
IR |
20+ |
DPAK |
36900 |
原裝優(yōu)勢主營型號-可開原型號增稅票 |
詢價(jià) | ||
IR |
23+ |
TO-252 |
35901 |
##公司主營品牌長期供應(yīng)100%原裝現(xiàn)貨可含稅提供技術(shù) |
詢價(jià) | ||
INFINEON |
16+ |
TO-252 |
50 |
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
詢價(jià) | ||
IR |
23+ |
D2PAK |
7750 |
全新原裝優(yōu)勢 |
詢價(jià) | ||
IR |
23+ |
TO-252 |
3032 |
原裝正品代理渠道價(jià)格優(yōu)勢 |
詢價(jià) |
