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IRFR220NTRPBF

HEXFETPower MOSFET

IRF

International Rectifier

IRFR220NTRR

SMPSMOSFET

KERSEMI

Kersemi Electronic Co., Ltd.

IRFR220NTRRPBF

HighfrequencyDC-DCconverters

IRF

International Rectifier

IRFR220PBF

HEXFEPPowerMOSFET

HEXFEP?PowerMOSFETVdss=200VRDS(on)=0.80?ID=4.8A

IRF

International Rectifier

IRFR220PBF

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thestr

VishayVishay Siliconix

威世科技威世科技半導體

IRFR220PBF

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest

KERSEMI

Kersemi Electronic Co., Ltd.

IRFR220PBF

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導體

IRFR220R

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest

KERSEMI

Kersemi Electronic Co., Ltd.

IRFR220TR

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thestr

VishayVishay Siliconix

威世科技威世科技半導體

IRFR220TR

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest

KERSEMI

Kersemi Electronic Co., Ltd.

詳細參數(shù)

  • 型號：

    IRFR220NTRPBF

  • 功能描述：

    MOSFET 200V 1 N-CH HEXFET 600mOhms 15nC

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號品牌批號封裝庫存備注價格
IR
13+
TO-252
100000
深圳市勤思達科技有限公司主營IR系列全新原裝正品,公司現(xiàn)貨供應(yīng)IRFR220NTRPBF,歡迎咨詢洽談。
 詢價
IR
23+
TO-252
20540
保證進口原裝現(xiàn)貨假一賠十
 詢價
IR
2020+
TO-252
9600
百分百原裝正品 真實公司現(xiàn)貨庫存 本公司只做原裝 可
 詢價
IR
19+
TO-252
15868
詢價
INFINEON/IR
20+
PG-TO252-3 (DPAK)
2000
詢價
INFINEON/IR
1907+
NA
6000
20年老字號,原裝優(yōu)勢長期供貨
 詢價
IR
16+
TO-252
36000
原裝正品,優(yōu)勢庫存81
 詢價
IR
23+
SOT-252
65400
詢價
INFINEON/英飛凌
2021+
TO-252
18370
原裝進口假一罰十
 詢價
IR
2020+
TO-252
8000
只做自己庫存,全新原裝進口正品假一賠百,可開13%增
 詢價
更多IRFR220NTRPBF供應(yīng)商 更新時間2025-1-22 11:04:00

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