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零件編號	下載&訂購	功能描述	制造商&上傳企業(yè)	LOGO
IRFR210TRRA	文件：4.91599 Mbytes Page：7 Pages	Power MOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFR210TRRPBF	文件：834.32 Kbytes Page：11 Pages	PowerMOSFET	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFU210	文件：2.39965 Mbytes Page：8 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFU210	文件：171.11 Kbytes Page：6 Pages	PowerMOSFET(Vdss=200V,Rds(on)=1.5ohm,Id=2.6A) DESCRIPTION ThirdGenerationMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD-PAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thestraigh	IRF International Rectifier	IRF
IRFU210	文件：4.91599 Mbytes Page：7 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFU210	文件：834.32 Kbytes Page：11 Pages	PowerMOSFET FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?Surface-mount(IRFR210,SiHFR210) ?Straightlead(IRFU210,SiHFU210) ?Availableintapeandreel ?Fastswitching ?Easeofparalleling ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?9	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFU210B	文件：655.26 Kbytes Page：9 Pages	200VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
IRFU210PBF	文件：2.15484 Mbytes Page：10 Pages	HEXFETPOWERMOSFET	IRF International Rectifier	IRF
IRFU210PBF	文件：2.39965 Mbytes Page：8 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFU210PBF	文件：4.91599 Mbytes Page：7 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFU210PBF	文件：834.32 Kbytes Page：11 Pages	PowerMOSFET	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFY210	文件：15.61 Kbytes Page：1 Pages	N-ChannelMOSFETinaHermeticallysealed	SEME-LAB Seme LAB	SEME-LAB
IRFY210C	文件：15.61 Kbytes Page：1 Pages	N-ChannelMOSFETinaHermeticallysealed	SEME-LAB Seme LAB	SEME-LAB
IRLM210	文件：270.09 Kbytes Page：7 Pages	AdvancedPowerMOSFET FEATURES ●AvalancheRuggedTechnology ●RuggedGateOxideTechnology ●LowerInputCapacitance ●ImprovedGateCharge ●ExtendedSafeOperatingArea ●LowerLeakageCurrent:10μA(Max.)@VDS=200V ●LowerRDS(ON):1.185?(Typ.)	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
IRLM210A	文件：270.09 Kbytes Page：7 Pages	AdvancedPowerMOSFET FEATURES ●AvalancheRuggedTechnology ●RuggedGateOxideTechnology ●LowerInputCapacitance ●ImprovedGateCharge ●ExtendedSafeOperatingArea ●LowerLeakageCurrent:10μA(Max.)@VDS=200V ●LowerRDS(ON):1.185?(Typ.)	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
IRLR210A	文件：320.97 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
IRLR210ATM	文件：1.3737 Mbytes Page：5 Pages	N-channelEnhancementModePowerMOSFET Features ?VDS=200V,ID=30A RDS(ON)	BychipBYCHIP ELECTRONICS CO., LIMITED 百域芯深圳市百域芯科技有限公司	Bychip
IRLRU210A	文件：234.09 Kbytes Page：7 Pages	AdvancedPowerMOSFET	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
IRLU210A	文件：345.12 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
IS210	文件：463.78 Kbytes Page：3 Pages	SmallOutlinePhotoDMOS-FETRelaywithHighLoadVoltageCapabilities DESCRIPTION TheIS210isaminiature1-FormAsolidstaterelayina4pinSOPpackage.TheIS210utilisesMOSFETtechnologythatisopticallycoupledtoahighlyefficientGaAlAsinfraredlightemittingdiodes. FEATURES ?SOP4pinpackageforcompactPCBs ?Lowerdriverpowerrequirements ?	ISOCOM ISOCOM COMPONENTS	ISOCOM

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供應(yīng)商	型號	品牌	批號	封裝	庫存	備注	價格
深圳市昌和盛利電子有限公司	IRFR210TRRPBF	IR	23+	D-PAK	19526		詢價
深圳市華斯頓科技有限公司	IRFR210TRRPBF	IR	22+23+	TO-252	27521	絕對原裝正品全新進(jìn)口深圳現(xiàn)貨	詢價
深圳市科雨電子有限公司	IRFR210TRRPBF	VISHAY	1809+	TO-252	3675	就找我吧!--邀您體驗愉快問購元件!	詢價
深圳市萊克訊科技有限公司	IRFR210TRRPBF	IR	1923+	TO-252	6896	原裝進(jìn)口現(xiàn)貨庫存專業(yè)工廠研究所配單供貨	詢價
京海半導(dǎo)體(深圳)有限公司	IRFR210TRRPBF	IR	21+	SOT252	10000	原裝現(xiàn)貨假一罰十	詢價
深圳市吉銀科技有限公司	IRFR210TRRPBF	SIX	1535+		490		詢價
深圳市河鋒鑫科技有限公司	IRFR210TRRPBF	Vishay Siliconix	22+	TO2523 DPak (2 Leads + Tab) SC	9000	原廠渠道,現(xiàn)貨配單	詢價
深圳市芯福林電子科技有限公司	IRFR210TRRPBF	Vishay Siliconix	21+	TO2523 DPak (2 Leads + Tab) SC	13880	公司只售原裝,支持實單	詢價
易創(chuàng)佳業(yè)科技（深圳）有限公司	IRFR210TRRPBF	Vishay Siliconix	23+	TO2523 DPak (2 Leads + Tab) SC	9000	原裝正品，支持實單	詢價
深圳市鵬順微電子科技有限公司	IRFR210TRRPBF	Vishay Siliconix	2022+	TO-252-3,DPak(2 引線 + 接片	38550	全新原裝支持表配單中國著名電子元器件獨立分銷	詢價

更多IRFR210TRRA供應(yīng)商更新時間2024-10-31 10:05:00

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