首頁 >IRFR220TRR>規(guī)格書列表
| 零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
|---|---|---|---|---|
IRFR220TRR | Power MOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thestr | VishayVishay Siliconix 威世科技威世科技半導體 | Vishay | |
IRFR220TRR | Power MOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | |
Power MOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thestr | VishayVishay Siliconix 威世科技威世科技半導體 | Vishay | ||
Power MOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
Power MOSFET | VishayVishay Siliconix 威世科技威世科技半導體 | Vishay | ||
AdvancedPowerMOSFET FEATURES ■AvalancheRuggedTechnology ■RuggedGateOxideTechnology ■LowerInputCapacitance ■ImprovedGateCharge ■ExtendedSafeOperatingArea ■LowerLeakageCurrent:10A(Max.)@VDS=200V ■LowRDS(ON):0.626?(Typ.) | FairchildFairchild Semiconductor 仙童半導體飛兆/仙童半導體公司 | Fairchild | ||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thestr | VishayVishay Siliconix 威世科技威世科技半導體 | Vishay | ||
4.6A,200V,0.800Ohm,N-ChannelPowerMOSFETs TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchas | Intersil Intersil Corporation | Intersil | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
PowerMOSFET FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?Surface-mount(IRFR220,SiHFR220) ?Straightlead(IRFU220,SiHFU220) ?Availableintapeandreel ?Fastswitching ?Easeofparalleling ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?9 | VishayVishay Siliconix 威世科技威世科技半導體 | Vishay | ||
AdvancedPowerMOSFET FEATURES ■AvalancheRuggedTechnology ■RuggedGateOxideTechnology ■LowerInputCapacitance ■ImprovedGateCharge ■ExtendedSafeOperatingArea ■LowerLeakageCurrent:10A(Max.)@VDS=200V ■LowRDS(ON):0.626?(Typ.) | FairchildFairchild Semiconductor 仙童半導體飛兆/仙童半導體公司 | Fairchild | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
200VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandh | FairchildFairchild Semiconductor 仙童半導體飛兆/仙童半導體公司 | Fairchild | ||
IscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
200VN-ChannelMOSFET GeneralDescription TheseN-Channelenhancementmodepowerfieldeffect transistorsareproducedusingONSemiconductor’s proprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredto minimizeon-stateresistance,providesuperiorswitching performance,andw | ONSEMION Semiconductor 安森美半導體安森美半導體公司 | ONSEMI | ||
PowerMOSFET(Vdss=200V,Rds(on)max=600mohm,Id=5.0A) Applications ●HighfrequencyDC-DCconverters Benefits ●LowGatetoDrainChargetoReduceSwitchingLosses ●FullyCharacterizedCapacitanceIncludingEffectiveCOSStoSimplifyDesign,(SeeApp.NoteAN1001) ●FullyCharacterizedAvalancheVoltageandCurrent TypicalSMPSTopologies ●T | IRF International Rectifier | IRF | ||
SMPSMOSFET Applications ●HighfrequencyDC-DCconverters Benefits ●LowGatetoDrainChargetoReduceSwitchingLosses ●FullyCharacterizedCapacitanceIncludingEffectiveCOSStoSimplifyDesign,(SeeApp.NoteAN1001) ●FullyCharacterizedAvalancheVoltageandCurrent | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
IscN-ChannelMOSFETTransistor ?FEATURES ?WithTO-251(IPAK)packaging ?Uninterruptiblepowersupply ?Highspeedswitching ?Hardswitchedandhighfrequencycircuits ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation ?APPLICATIONS ?Switchingapplications ? | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
HEXFETPowerMOSFET Applications ?HighfrequencyDC-DCconverters ?Lead-Free Benefits ?LowGatetoDrainChargetoReduceSwitchingLosses ?FullyCharacterizedCapacitanceIncludingEffectiveCOSStoSimplifyDesign,(SeeApp.NoteAN1001) ?FullyCharacterizedAvalancheVoltageandCurrent | IRF International Rectifier | IRF |
詳細參數
- 型號：
IRFR220TRR
- 功能描述：
MOSFET N-Chan 200V 4.8 Amp
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶體管極性：
N-Channel
- 汲極/源極擊穿電壓：
650 V
- 閘/源擊穿電壓：
25 V
- 漏極連續(xù)電流：
130 A 電阻汲極/源極
- RDS（導通）：
0.014 Ohms
- 配置：
Single
- 安裝風格：
Through Hole
- 封裝/箱體：
Max247
- 封裝：
Tube
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
IR |
16+ |
原廠封裝 |
10862 |
原裝現貨假一罰十 |
詢價 | ||
IR |
2020+ |
標準封裝 |
350000 |
100%進口原裝正品公司現貨庫存 |
詢價 | ||
IR/VISH |
21+ |
65230 |
詢價 | ||||
SIX |
1535+ |
500 |
詢價 | ||||
IR |
22+ |
n/a |
6000 |
終端可免費供樣,支持BOM配單 |
詢價 | ||
IR |
2023+環(huán)?，F貨 |
TO-252 |
18000 |
專注軍工、汽車、醫(yī)療、工業(yè)等方案配套一站式服務 |
詢價 | ||
IR/VISH |
23+ |
7300 |
專注配單,只做原裝進口現貨 |
詢價 | |||
IR |
2023+ |
TO-252 |
50000 |
原裝現貨 |
詢價 | ||
IR/VISH |
23+ |
7300 |
專注配單,只做原裝進口現貨 |
詢價 | |||
IR |
23+ |
n/a |
7000 |
詢價 |
相關規(guī)格書
更多- IRFR220TRRPBF
- IRFR224TRLPBF
- IRFR2307ZPBF
- IRFR2405PBF
- IRFR2405TRPBF
- IRFR2407PBF
- IRFR2407TRPBF
- IRFR24N15DTRPBF
- IRFR2905ZPBF
- IRFR2905ZTRPBF
- IRFR310PBF
- IRFR310TRPBF
- IRFR320PBF
- IRFR320TRLPBF
- IRFR320TRPBF-CUTTAPE
- IRFR3303TR
- IRFR3410PBF
- IRFR3410TRLPBF-CUTTAPE
- IRFR3411PBF
- IRFR3504ZPBF
- IRFR3505PBF
- IRFR3518HR
- IRFR3518TRPBF
- IRFR3607TRPBF
- IRFR3704
- IRFR3704TRLPBF
- IRFR3704ZTRLPBF
- IRFR3706TRLPBF
- IRFR3707ZPBF
- IRFR3707ZTRLPBF
- IRFR3708PBF
- IRFR3708TRPBF
- IRFR3709ZTRLPBF
- IRFR3709ZTRPBF-CUTTAPE
- IRFR3710ZTRLPBF
- IRFR3711TRPBF
- IRFR3711ZTRPBF
- IRFR3806TRPBF
- IRFR3910PBF
- IRFR3910TRLPBF-CUTTAPE
- IRFR4104PBF
- IRFR4105PBF
- IRFR4105TRPBF
- IRFR4105ZTRPBF
- IRFR420ATRPBF
相關庫存
更多- IRFR224PBF
- IRFR224TRPBF
- IRFR2307ZTRLPBF
- IRFR2405TRLPBF
- IRFR2405TRPBF-CUTTAPE
- IRFR2407TRLPBF
- IRFR24N15DPBF
- IRFR2905ZHR
- IRFR2905ZTRLPBF
- IRFR310BTM
- IRFR310TRLPBF
- IRFR320
- IRFR320TF
- IRFR320TRPBF
- IRFR3303PBF
- IRFR3303TRPBF
- IRFR3410TRLPBF
- IRFR3410TRPBF
- IRFR3411TRPBF
- IRFR3504ZTRPBF
- IRFR3505TRPBF
- IRFR3518PBF
- IRFR3607PBF
- IRFR3607TRPBF/BKN
- IRFR3704HR
- IRFR3704ZPBF
- IRFR3704ZTRPBF
- IRFR3707TRLPBF
- IRFR3707ZTR
- IRFR3707ZTRPBF
- IRFR3708TRLPBF
- IRFR3709ZPBF
- IRFR3709ZTRPBF
- IRFR3710ZPBF
- IRFR3710ZTRPBF
- IRFR3711ZTRLPBF
- IRFR3806PBF
- IRFR3910HR
- IRFR3910TRLPBF
- IRFR3910TRPBF
- IRFR4104TRPBF
- IRFR4105TRLPBF
- IRFR4105ZPBF
- IRFR420APBF
- IRFR420B
