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首頁 >IRFR120NCLPBF>規(guī)格書列表

零件編號	下載&訂購	功能描述	制造商&上傳企業(yè)	LOGO
IRFR120NCLPBF	文件：396.01 Kbytes Page：11 Pages	Surface Mount (IRFR120N)	IRF International Rectifier	IRF
IRFR120NPBF	文件：395.05 Kbytes Page：11 Pages	FastSwitching VDSS=100V RDS(on)=0.21? ID=9.4A Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedes	IRF International Rectifier	IRF
IRFR120NPBF	文件：4.0085 Mbytes Page：10 Pages	SurfaceMount(IRFR120N)StraightLead(IRFU120N) VDSS=100V RDS(on)=0.21? ID=9.4A Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedes	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFR120NPBF	文件：396.01 Kbytes Page：11 Pages	ADVANCEDPROCESSTECHNOLOGY	IRF International Rectifier	IRF
IRFR120NPBF	文件：396.01 Kbytes Page：11 Pages	SurfaceMount(IRFR120N)	IRF International Rectifier	IRF
IRFR120NTR	文件：536.66 Kbytes Page：7 Pages	TheD-PAKisdesignedforsurfacemountingusingvaporphase,infraredorwavesolderingtechniques. Features VDS(V)=100V ID=9.4A(VGS=10V) RDS(ON)=210mW(VGS=10V)	UMWGuangdong Youtai Semiconductor Co., Ltd. 友臺半導體廣東友臺半導體有限公司	UMW
IRFR120NTR	文件：466.21 Kbytes Page：7 Pages	MOSFET Description TheD-PAKisdesignedforsurfacemounting usingvaporphase,infraredorwavesoldering techniques.Powerdissipationlevelsupto 1.5wattsarepossibleintypicalsurfacemount applications. Features VDS(V)=100V ID=9.4A(VGS=10V) RDS(ON)=210mW(VGS=10V)	EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED 翊歐翊歐半導體	EVVOSEMI
IRFR120NTRPBF	文件：979.62 Kbytes Page：7 Pages	N-Channel100V(D-S)MOSFET	VBSEMIVBsemi Electronics Co.,Ltd 微碧半導體微碧半導體（臺灣）有限公司	VBSEMI
IRFR120NTRRPBF	文件：249.71 Kbytes Page：11 Pages	UltraLowOn-Resistance	IRF International Rectifier	IRF
IRFR120PBF	文件：2.12101 Mbytes Page：10 Pages	HEXFETPOWERMOSFET(VDSS=100V,RDS(on)=0.27廓,ID=7.7A)	IRF International Rectifier	IRF
IRFR120PBF	文件：1.70201 Mbytes Page：8 Pages	IRFR120 DESCRIPTION ThirdgenerationpowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest	VishayVishay Siliconix 威世科技威世科技半導體	Vishay
IRFR120PBF	文件：4.22483 Mbytes Page：7 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFR120PBF	文件：838.17 Kbytes Page：13 Pages	PowerMOSFET	VishayVishay Siliconix 威世科技威世科技半導體	Vishay
IRFR120TR	文件：179.46 Kbytes Page：6 Pages	HEXFETPOWERMOSFET DESCRIPTION ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. FEATURES ?DynamicdV/dtRating ?RepetitiveAvalancheRated ?SurfaceMount(IRFR120) ?Str	IRF International Rectifier	IRF
IRFR120TR	文件：1.70201 Mbytes Page：8 Pages	IRFR120 DESCRIPTION ThirdgenerationpowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest	VishayVishay Siliconix 威世科技威世科技半導體	Vishay
IRFR120TRL	文件：1.88411 Mbytes Page：8 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest	VishayVishay Siliconix 威世科技威世科技半導體	Vishay
IRFR120TRL	文件：1.70201 Mbytes Page：8 Pages	IRFR120 DESCRIPTION ThirdgenerationpowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest	VishayVishay Siliconix 威世科技威世科技半導體	Vishay
IRFR120TRL	文件：4.27854 Mbytes Page：7 Pages	DynamicdV/dtRating	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFR120TRL	文件：4.27848 Mbytes Page：7 Pages	DynamicdV/dtRating DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFR120TRL	文件：4.22483 Mbytes Page：7 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI

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供應商	型號	品牌	批號	封裝	庫存	備注	價格
深圳市華來深電子有限公司	IRFR120NCMD12N10	IR	23+	TO-252	11846	一級代理商現貨批發(fā),原裝正品,假一罰十	詢價
深圳市科恒偉業(yè)電子有限公司	IRFR120NCMD12N10	IR	1822+	TO-252	9852	只做原裝正品假一賠十為客戶做到零風險!!	詢價
深圳市賽芯源科技有限公司	IRFR120NCMD12N10	IR	18+	TO-252	41200	原裝正品,現貨特價	詢價
深圳市河鋒鑫科技有限公司	IRFR120NCMD12N10	IR	22+	TO-252	6000	終端可免費供樣,支持BOM配單	詢價
深圳市安富世紀電子有限公司	IRFR120NCMD12N10	IR	23+	TO-252	8000	只做原裝現貨	詢價
天津市博通航睿技術有限公司	IRFR120NCMD12N10	IR	23+	TO-252	7000		詢價
深圳市科雨電子有限公司	IRFR120NCPBF	INFINEON	1503+	TO-252	3000	就找我吧!--邀您體驗愉快問購元件!	詢價
深圳市易訊博科技有限公司	IRFR120NCPBF	Infineon	22+	NA	2118	加我QQ或微信咨詢更多詳細信息,	詢價
京海半導體(深圳)有限公司	IRFR120NCPBF	VB	21+	TO-252AA	10000	原裝現貨假一罰十	詢價
深圳市芯福林電子科技有限公司	IRFR120NCPBF	Infineon Technologies	21+	TO2523 DPak (2 Leads + Tab) SC	13880	公司只售原裝,支持實單	詢價

更多IRFR120NCLPBF供應商更新時間2025-1-7 14:06:00

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