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IRFR120NPBF中文資料IRF數(shù)據(jù)手冊(cè)PDF規(guī)格書
IRFR120NPBF規(guī)格書詳情
VDSS = 100V
RDS(on) = 0.21?
ID = 9.4A
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer
with an extremely efficient device for use in a wide variety of applications.
The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for through hole mounting applications. Power dissipation levels
up to 1.5 watts are possible in typical surface mount applications.
Surface Mount (IRFR120N)
Straight Lead (IRFU120N)
Advanced Process Technology
Fast Switching
Fully Avalanche Rated
Lead Free
產(chǎn)品屬性
- 型號(hào)：
IRFR120NPBF
- 功能描述：
MOSFET 100V 1 N-CH HEXFET PWR MOSFET 210mOhms
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶體管極性：
N-Channel
- 汲極/源極擊穿電壓：
650 V
- 閘/源擊穿電壓：
25 V
- 漏極連續(xù)電流：
130 A 電阻汲極/源極
- RDS（導(dǎo)通）：
0.014 Ohms
- 配置：
Single
- 安裝風(fēng)格：
Through Hole
- 封裝/箱體：
Max247
- 封裝：
Tube
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
INFINEON/英飛凌 |
標(biāo)準(zhǔn)封裝 |
50060 |
一級(jí)代理原裝正品現(xiàn)貨期貨均可訂購(gòu) |
詢價(jià) | |||
IR |
TO-252 |
68900 |
原包原標(biāo)簽100%進(jìn)口原裝常備現(xiàn)貨! |
詢價(jià) | |||
INTERNATIONA |
22+ |
SOT-2633&NBS |
4500 |
全新原裝品牌專營(yíng) |
詢價(jià) | ||
IR |
22+ |
TO-252 |
23650 |
原裝正品，實(shí)單請(qǐng)聯(lián)系 |
詢價(jià) | ||
IR/VISHAY |
2022 |
TO-252 |
80000 |
原裝現(xiàn)貨,OEM渠道,歡迎咨詢 |
詢價(jià) | ||
INFINEON/英飛凌 |
2022+ |
75 |
6600 |
只做原裝,假一罰十,長(zhǎng)期供貨。 |
詢價(jià) | ||
IOR |
23+ |
SOT253 |
9800 |
全新原裝現(xiàn)貨,假一賠十 |
詢價(jià) | ||
IR |
21+ |
65230 |
詢價(jià) | ||||
INFINEON/英飛凌 |
2022+ |
TO-252 |
57550 |
詢價(jià) | |||
IR |
2022 |
TO-252 |
6800 |
原廠原裝正品,價(jià)格超越代理 |
詢價(jià) |
