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IRFR1205TRPBF中文資料IRF數(shù)據(jù)手冊PDF規(guī)格書
IRFR1205TRPBF規(guī)格書詳情
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.
? Ultra Low On-Resistance
? Surface Mount (IRFR1205)
? Straight Lead (IRFU1205)
? Fast Switching
? Fully Avalanche Rated
? Lead-Free
產(chǎn)品屬性
- 型號:
IRFR1205TRPBF
- 功能描述:
MOSFET 55V 1 N-CH HEXFET 27mOhms 43.3nC
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶體管極性:
N-Channel
- 汲極/源極擊穿電壓:
650 V
- 閘/源擊穿電壓:
25 V
- 漏極連續(xù)電流:
130 A 電阻汲極/源極
- RDS(導(dǎo)通):
0.014 Ohms
- 配置:
Single
- 安裝風(fēng)格:
Through Hole
- 封裝/箱體:
Max247
- 封裝:
Tube
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
Infineon(英飛凌) |
23+ |
TO-252 |
27048 |
原廠可訂貨,技術(shù)支持,直接渠道??珊灡9┖贤?/div> |
詢價(jià) | ||
INFINEON |
23+ |
K-H |
66000 |
只有原裝,請來電咨詢 |
詢價(jià) | ||
IR |
2020+ |
TO-252 |
8000 |
只做自己庫存,全新原裝進(jìn)口正品假一賠百,可開13%增 |
詢價(jià) | ||
Infineon Technologies |
24+ |
D-Pak |
30000 |
晶體管-分立半導(dǎo)體產(chǎn)品-原裝正品 |
詢價(jià) | ||
IR |
1812+ |
TO-252 |
164 |
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
詢價(jià) | ||
INFINEON/英飛凌 |
22+ |
SOP-8 |
100000 |
代理渠道/只做原裝/可含稅 |
詢價(jià) | ||
IR |
22+ |
TO-252 |
9000 |
原裝正品 |
詢價(jià) | ||
INFINEON/英飛凌 |
24+ |
TO-252 |
160114 |
明嘉萊只做原裝正品現(xiàn)貨 |
詢價(jià) | ||
IR |
22+ |
TO-252 |
3900 |
原裝優(yōu)勢!公司現(xiàn)貨供應(yīng)! |
詢價(jià) | ||
INFINEON/英飛凌 |
20+ |
TO-252 |
2384 |
原裝現(xiàn)貨 |
詢價(jià) |