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IRFP264

Power MOSFET(Vdss=250V, Rds(on)=0.075ohm, Id=38A)

Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. ●Dynamicdv/dtRating ●RepetitiveAvalancheRated ●IsolatedCentralMountingHole ●FastS

IRF

International Rectifier

IRFP264

Standard Power MOSFET - N-Channel Enhancement Mode

N-ChannelEnhancementMode StandardPowerMOSFET Features ?Internationalstandardpackage JEDECTO-247AD ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?Highcommutatingdv/dtrating ?Fastswitchingtimes Applications ?Switch-modeandresonant-mode po

IXYS

IXYS Corporation

IRFP264

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. FEATURES ?DynamicdV/dtRating ?RepetitiveAvalancheRated ?IsolatedCentralMountingHole ?FastSw

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFP264

Power MOSFET

FEATURES ?DynamicdV/dtRating ?RepetitiveAvalancheRated ?IsolatedCentralMountingHole ?FastSwitching ?EaseofParalleling ?SimpleDriveRequirements ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovidesinf

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFP264

iscN-Channel MOSFET Transistor

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IRFP264

Power MOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFP264_V02

Power MOSFET

FEATURES ?DynamicdV/dtRating ?RepetitiveAvalancheRated ?IsolatedCentralMountingHole ?FastSwitching ?EaseofParalleling ?SimpleDriveRequirements ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovidesinf

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFP264N

Power MOSFET(Vdss=250V, Rds(on)=60mohm, Id=44A)

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRF

International Rectifier

IRFP264N

Power MOSFET

DESCRIPTION FifthgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknowfor,providesthedesignerwit

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFP264NPBF

HEXFET Power MOSFET

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRF

International Rectifier

詳細(xì)參數(shù)

  • 型號(hào):

    IRFP264

  • 功能描述:

    MOSFET N-Chan 250V 38 Amp

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
IR
13+
IRFP264
10000
深圳市勤思達(dá)科技有限公司主營(yíng)IR系列,現(xiàn)貨供應(yīng)IRFP264,全新原裝,正品供應(yīng)。
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IR
進(jìn)口原裝
3000
庫(kù)存現(xiàn)貨
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IR
24+
TO-247
7550
絕對(duì)原裝現(xiàn)貨,價(jià)格低,歡迎詢(xún)購(gòu)!
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IR
24+
TO 3P
161338
明嘉萊只做原裝正品現(xiàn)貨
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IR
00+
TO-247
300
一切實(shí)報(bào)只做原裝正品現(xiàn)貨
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IR
2024+
N/A
70000
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VISHAY
25+
TO-247
6500
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IOR
24+
TO-247
10
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IR
23+
TO-247
9526
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IR
24+
原廠封裝
827
原裝現(xiàn)貨假一罰十
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更多IRFP264供應(yīng)商 更新時(shí)間2025-3-25 11:04:00