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IRFP360

MegaMOS FET

Features ?Fastswitchingtimes ?Internationalstandardpackages ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?Highcommutingdv/dtrating Applications ?DCchoppers ?MotorControls ?Switch-modeandresonant-mode ?Uninterruptablepowersupplies(UPS) Adva

IXYS

IXYS Corporation

IRFP360

isc N-Channel MOSFET Transistor

FEATURES ?DrainCurrent–ID=23A@TC=25℃ ?DrainSourceVoltage- :VDSS=400V(Min) ?StaticDrain-SourceOn-Resistance :RDS(on)=0.2Ω(Max) ?FastSwitching DESCRIPTION ?Designedforuseinswitchmodepowersuppliesandgeneral purposeapplications.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRFP360

Avalanche-Energy-Rated N-Channel Power MOSFETs

TheIRFP360andIRFP362areadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperationThesearen-channelenhancement-modesilicon-gatepowerfield-effecttransistorsdesignedforapplicationssuchasswitchingre

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

IRFP360

Power MOSFET

FEATURES ?DynamicdV/dtrated ?Repetitiveavalancherated ?Isolatedcentralmountinghole ?Fastswitching ?Easeofparalleling ?Simpledriverequirements ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovidesinfo

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFP360

23A, 400V, 0.200 Ohm, N-Channel Power MOSFET

ThisadvancedpowerMOSFETisdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistorsdesignedforapplicationssuchasswitchingregulators,switchingc

Intersil

Intersil Corporation

IRFP360

Power MOSFET(Vdss=400V, Rds(on)=0.20ohm, Id=23A)

IRF

International Rectifier

IRFP360

Power MOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFP360

Power MOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFP360_V01

Power MOSFET

FEATURES ?DynamicdV/dtrated ?Repetitiveavalancherated ?Isolatedcentralmountinghole ?Fastswitching ?Easeofparalleling ?Simpledriverequirements ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovidesinfo

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFP360LC

Power MOSFET(Vdss=400V, Rds(on)=0.20ohm, Id=23A)

Description ThisnewseriesofLowChargeHEXFETPowerMOSFETsachievesignificantlylowergatechargeoverconventionalMOSFETs.UtilizingadvancedHexfettechnologythedeviceimprovementsallowforreducedgatedriverequirements,fasterswitchingspeedsandincreasedtotalsystemsavings.The

IRF

International Rectifier

IRFP360LC

Power MOSFET

FEATURES ?Ultralowgatecharge ?Reducedgatedriverequirement ?Enhanced30VVGSrating ?ReducedCiss,Coss,Crss ?Isolatedcentralmountinghole ?DynamicdV/dtrated ?Repetitiveavalancherated ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/do

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFP360LC_V02

Power MOSFET

FEATURES ?Ultralowgatecharge ?Reducedgatedriverequirement ?Enhanced30VVGSrating ?ReducedCiss,Coss,Crss ?Isolatedcentralmountinghole ?DynamicdV/dtrated ?Repetitiveavalancherated ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/do

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFP360LCPBF

HEXFET Power MOSFET

Description ThisnewseriesofLowChargeHEXFETPowerMOSFETsachievesignificantlylowergatechargeoverconventionalMOSFETs.UtilizingadvancedHexfettechnologythedeviceimprovementsallowforreducedgatedriverequirements,fasterswitchingspeedsandincreasedtotalsystemsavings.The

IRF

International Rectifier

IRFP360LC

Power MOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFP360LC

Power MOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFP360LC

isc N-Channel MOSFET Transistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRFP360LC

Power MOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFP360LC_17

Power MOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFP360LC_V01

Power MOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFP360LCPBF

Power MOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

詳細(xì)參數(shù)

  • 型號：

    IRFP360

  • 功能描述：

    MOSFET N-Chan 400V 23 Amp

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號品牌批號封裝庫存備注價格
23+
TO-3P
12800
專注原裝正品現(xiàn)貨特價中量大可定
 詢價
IR
24+
TO247
4000
原裝原廠代理 可免費送樣品
 詢價
IR
2024+
N/A
70000
柒號只做原裝 現(xiàn)貨價秒殺全網(wǎng)
 詢價
IR
06+
TO-247
1000
全新原裝 絕對有貨
 詢價
IR
9743
50
原裝正品現(xiàn)貨庫存價優(yōu)
 詢價
IR
2015+
SOP/DIP
19889
一級代理原裝現(xiàn)貨,特價熱賣!
 詢價
HAR
24+
SOT
39
詢價
VISHAY/IR
16+
原廠封裝
7725
原裝現(xiàn)貨假一罰十
 詢價
IR
16+
TO-3P
10000
全新原裝現(xiàn)貨
 詢價
IR
N/A
主營模塊
190
原裝正品,現(xiàn)貨供應(yīng)
 詢價
更多IRFP360供應(yīng)商 更新時間2024-12-23 10:18:00

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