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IRFP054

Power MOSFET(Vdss=60V, Rds(on)=0.014ohm, Id=70*A)

Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-247packageispreferredforcommercial-industrialapplicationswherehigherpowerlevels

IRF

International Rectifier

IRFP054

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-247ACpackageispreferredforcommercial-industrialapplicationswherehigherpowerlevelspreclude

VishayVishay Siliconix

威世科技威世科技半導體

IRFP054

N-Channel MOSFET Transistor

DESCRIPTION ?Designedforuseinswitchmodepowersuppliesandgeneralpurposeapplications. FEATURES ?DrainCurrent–ID=70A@TC=25℃ ?DrainSourceVoltage-:VDSS=60V(Min) ?StaticDrain-SourceOn-Resistance:RDS(on)=0.014Ω(Max) ?FastSwitching

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IRFP054

Power MOSFET

FEATURES ?DynamicdV/dtrating ?Isolatedcentralmountinghole ?175°Coperatingtemperature ?Fastswitching ?Easeofparalleling ?Simpledriverequirements ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovidesi

VishayVishay Siliconix

威世科技威世科技半導體

IRFP054

Power MOSFET

VishayVishay Siliconix

威世科技威世科技半導體

IRFP054

Power MOSFET

VishayVishay Siliconix

威世科技威世科技半導體

IRFP054

Power MOSFET

VishayVishay Siliconix

威世科技威世科技半導體

IRFP054

Power MOSFET

TFUNKVishay Telefunken

威世威世(VISHAY)集團

IRFP054_V02

Power MOSFET

FEATURES ?DynamicdV/dtrating ?Isolatedcentralmountinghole ?175°Coperatingtemperature ?Fastswitching ?Easeofparalleling ?Simpledriverequirements ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovidesi

VishayVishay Siliconix

威世科技威世科技半導體

IRFP054N

Power MOSFET(Vdss=55V, Rds(on)=0.012ohm, Id=81A??

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRF

International Rectifier

IRFP054N

N-Channel MOSFET Transistor

?DESCRITION ?UltraLowOn-resistance ?FastSwitching ?FEATURES ?Staticdrain-sourceon-resistance:RDS(on)≤12m? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IRFP054N

Advanced Process Technology

Description TheTO-247packageispreferredforcommercial-industrialapplicationswherehigherpowerlevelsprecludetheuseofTO-220devices.TheTO-247issimilarbutsuperiortotheearlierTO-218packagebecauseofitsisolatedmountinghole. ●AdvancedProcessTechnology ●Dynamicdv/dt

KERSEMI

Kersemi Electronic Co., Ltd.

IRFP054NPBF

HEXFET Power MOSFET

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRF

International Rectifier

IRFP054PBF

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-247ACpackageispreferredforcommercial-industrialapplicationswherehigherpowerlevelspreclude

VishayVishay Siliconix

威世科技威世科技半導體

IRFP054PBF

isc N-Channel MOSFET Transistor

?FEATURES ?WithTO-247packaging ?Uninterruptiblepowersupply ?Highspeedswitching ?Simpledriverequirements ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperationz ?APPLICATIONS ?Switchingapplications

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IRFP054V

Power MOSFET(Vdss=60V, Rds(on)=9.0mohm, Id=93A??

Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,pr

IRF

International Rectifier

IRFP054VPBF

HEXFET? Power MOSFET ( VDSS = 60V , RDS(on) = 9.0m廓 , ID = 93A )

Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,pr

IRF

International Rectifier

IRFP054_11

Power MOSFET

VishayVishay Siliconix

威世科技威世科技半導體

IRFP054NPBF

ADVANCED PROCESS TECHNOLOGY

IRF

International Rectifier

IRFP054NPBF_15

ADVANCED PROCESS TECHNOLOGY

IRF

International Rectifier

詳細參數(shù)

  • 型號:

    IRFP054

  • 功能描述:

    MOSFET N-Chan 60V 70 Amp

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

供應商型號品牌批號封裝庫存備注價格
IR
24+
TO-247AC
8866
詢價
IR
23+
TO-247
35890
詢價
IR
05+
TO-247
2000
全新原裝 絕對有貨
詢價
IR
2015+
TO-247AC
12500
全新原裝,現(xiàn)貨庫存長期供應
詢價
IR
16+
原廠封裝
622
原裝現(xiàn)貨假一罰十
詢價
IR
17+
TO-3P
6200
詢價
IR
23+
SOP/DIP
5000
原裝正品,假一罰十
詢價
IR
16+
TO-3P
10000
全新原裝現(xiàn)貨
詢價
IR
23+
TO-247AC
8600
全新原裝現(xiàn)貨
詢價
IRF
23+
NA
19960
只做進口原裝,終端工廠免費送樣
詢價
更多IRFP054供應商 更新時間2025-1-8 16:30:00