零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
IRFP054 | Power MOSFET(Vdss=60V, Rds(on)=0.014ohm, Id=70*A) Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-247packageispreferredforcommercial-industrialapplicationswherehigherpowerlevels | IRF International Rectifier | IRF | |
IRFP054 | Power MOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-247ACpackageispreferredforcommercial-industrialapplicationswherehigherpowerlevelspreclude | VishayVishay Siliconix 威世科技威世科技半導體 | Vishay | |
IRFP054 | N-Channel MOSFET Transistor DESCRIPTION ?Designedforuseinswitchmodepowersuppliesandgeneralpurposeapplications. FEATURES ?DrainCurrent–ID=70A@TC=25℃ ?DrainSourceVoltage-:VDSS=60V(Min) ?StaticDrain-SourceOn-Resistance:RDS(on)=0.014Ω(Max) ?FastSwitching | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | |
IRFP054 | Power MOSFET FEATURES ?DynamicdV/dtrating ?Isolatedcentralmountinghole ?175°Coperatingtemperature ?Fastswitching ?Easeofparalleling ?Simpledriverequirements ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovidesi | VishayVishay Siliconix 威世科技威世科技半導體 | Vishay | |
IRFP054 | Power MOSFET | VishayVishay Siliconix 威世科技威世科技半導體 | Vishay | |
IRFP054 | Power MOSFET | VishayVishay Siliconix 威世科技威世科技半導體 | Vishay | |
IRFP054 | Power MOSFET | VishayVishay Siliconix 威世科技威世科技半導體 | Vishay | |
IRFP054 | Power MOSFET | TFUNKVishay Telefunken 威世威世(VISHAY)集團 | TFUNK | |
Power MOSFET FEATURES ?DynamicdV/dtrating ?Isolatedcentralmountinghole ?175°Coperatingtemperature ?Fastswitching ?Easeofparalleling ?Simpledriverequirements ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovidesi | VishayVishay Siliconix 威世科技威世科技半導體 | Vishay | ||
Power MOSFET(Vdss=55V, Rds(on)=0.012ohm, Id=81A?? Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide | IRF International Rectifier | IRF | ||
N-Channel MOSFET Transistor ?DESCRITION ?UltraLowOn-resistance ?FastSwitching ?FEATURES ?Staticdrain-sourceon-resistance:RDS(on)≤12m? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
Advanced Process Technology Description TheTO-247packageispreferredforcommercial-industrialapplicationswherehigherpowerlevelsprecludetheuseofTO-220devices.TheTO-247issimilarbutsuperiortotheearlierTO-218packagebecauseofitsisolatedmountinghole. ●AdvancedProcessTechnology ●Dynamicdv/dt | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
HEXFET Power MOSFET Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide | IRF International Rectifier | IRF | ||
Power MOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-247ACpackageispreferredforcommercial-industrialapplicationswherehigherpowerlevelspreclude | VishayVishay Siliconix 威世科技威世科技半導體 | Vishay | ||
isc N-Channel MOSFET Transistor ?FEATURES ?WithTO-247packaging ?Uninterruptiblepowersupply ?Highspeedswitching ?Simpledriverequirements ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperationz ?APPLICATIONS ?Switchingapplications | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
Power MOSFET(Vdss=60V, Rds(on)=9.0mohm, Id=93A?? Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,pr | IRF International Rectifier | IRF | ||
HEXFET? Power MOSFET ( VDSS = 60V , RDS(on) = 9.0m廓 , ID = 93A ) Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,pr | IRF International Rectifier | IRF | ||
Power MOSFET | VishayVishay Siliconix 威世科技威世科技半導體 | Vishay | ||
ADVANCED PROCESS TECHNOLOGY | IRF International Rectifier | IRF | ||
ADVANCED PROCESS TECHNOLOGY | IRF International Rectifier | IRF |
詳細參數(shù)
- 型號:
IRFP054
- 功能描述:
MOSFET N-Chan 60V 70 Amp
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶體管極性:
N-Channel
- 汲極/源極擊穿電壓:
650 V
- 閘/源擊穿電壓:
25 V
- 漏極連續(xù)電流:
130 A 電阻汲極/源極
- RDS(導通):
0.014 Ohms
- 配置:
Single
- 安裝風格:
Through Hole
- 封裝/箱體:
Max247
- 封裝:
Tube
供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
IR |
24+ |
TO-247AC |
8866 |
詢價 | |||
IR |
23+ |
TO-247 |
35890 |
詢價 | |||
IR |
05+ |
TO-247 |
2000 |
全新原裝 絕對有貨 |
詢價 | ||
IR |
2015+ |
TO-247AC |
12500 |
全新原裝,現(xiàn)貨庫存長期供應 |
詢價 | ||
IR |
16+ |
原廠封裝 |
622 |
原裝現(xiàn)貨假一罰十 |
詢價 | ||
IR |
17+ |
TO-3P |
6200 |
詢價 | |||
IR |
23+ |
SOP/DIP |
5000 |
原裝正品,假一罰十 |
詢價 | ||
IR |
16+ |
TO-3P |
10000 |
全新原裝現(xiàn)貨 |
詢價 | ||
IR |
23+ |
TO-247AC |
8600 |
全新原裝現(xiàn)貨 |
詢價 | ||
IRF |
23+ |
NA |
19960 |
只做進口原裝,終端工廠免費送樣 |
詢價 |
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