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IRFP3710PBF

HEXFET POWER MOSFET ( VDSS = 100V , RDS(on) = 0.025廓 , ID = 57A )

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRF

International Rectifier

IRFP3710PBF

ADVANCED PROCESS TECHNOLOGY

IRF

International Rectifier

IRFP3710PBF_15

ADVANCED PROCESS TECHNOLOGY

IRF

International Rectifier

IRFR3710Z

AUTOMOTIVEMOSFET

Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimpro

IRF

International Rectifier

IRFR3710Z

N-ChannelMOSFETTransistor

?DESCRITION ?Fastswitching ?FEATURES ?Staticdrain-sourceon-resistance:RDS(on)≤18m? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRFR3710ZPBF

AUTOMOTIVEMOSFET

Description ThisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveavalancherating.Thesefeaturesco

IRF

International Rectifier

IRFR3710ZPBF

HEXFET?PowerMOSFET

Description ThisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveavalancherating.Thesefeaturesco

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IRFR3710ZPBF

AdvancedProcessTechnology

IRF

International Rectifier

IRFR3710ZPBF

AUTOMOTIVEMOSFET

Description ThisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveavalancherating.Thesefeaturesco

KERSEMI

Kersemi Electronic Co., Ltd.

IRFR3710ZPBF

HEXFETPowerMOSFET

KERSEMI

Kersemi Electronic Co., Ltd.

詳細(xì)參數(shù)

  • 型號：

    IRFP3710PBF

  • 功能描述：

    MOSFET MOSFT 100V 51A 250mOhm 66.7nCAC

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號品牌批號封裝庫存備注價格
INFINEON/IR
1907+
NA
2000
20年老字號,原裝優(yōu)勢長期供貨
 詢價
Infineon Technologies
24+
TO-247AC
30000
晶體管-分立半導(dǎo)體產(chǎn)品-原裝正品
 詢價
23+
TO-247
19806
專注原裝正品現(xiàn)貨特價中量大可定
 詢價
IR
15+
TO-247AC
9980
大量原裝進(jìn)口現(xiàn)貨,一手貨源,一站式服務(wù),可開17%增
 詢價
IR
16+
TO-247
36000
原裝正品,優(yōu)勢庫存81
 詢價
IR
23+
TO-247
65400
詢價
INFINEON/英飛凌
21+
NA
1600
只做原裝,假一罰十
 詢價
INFINEON/英飛凌
24+
TO-247
6415
只做原廠渠道 可追溯貨源
 詢價
IR
22+
TO-247
9800
只做原裝正品假一賠十!正規(guī)渠道訂貨!
 詢價
INFINEON/英飛凌
2021+
TO-247
9000
原裝現(xiàn)貨,隨時歡迎詢價
 詢價
更多IRFP3710PBF供應(yīng)商 更新時間2025-3-26 19:20:00

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