零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
IRFR3710Z | AUTOMOTIVE MOSFET Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimpro | IRF International Rectifier | IRF | |
IRFR3710Z | N-Channel MOSFET Transistor ?DESCRITION ?Fastswitching ?FEATURES ?Staticdrain-sourceon-resistance:RDS(on)≤18m? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | |
AUTOMOTIVE MOSFET Description ThisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveavalancherating.Thesefeaturesco | IRF International Rectifier | IRF | ||
HEXFET? Power MOSFET Description ThisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveavalancherating.Thesefeaturesco | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
AUTOMOTIVE MOSFET Description ThisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveavalancherating.Thesefeaturesco | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
AUTOMOTIVE MOSFET Description ThisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveavalancherating.Thesefeaturesco | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
HEXFET? Power MOSFET Description ThisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveavalancherating.Thesefeaturesco | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
HEXFET Power MOSFET | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
Advanced Process Technology | IRF International Rectifier | IRF | ||
Advanced Process Technology | IRF International Rectifier | IRF | ||
Advanced Process Technology | IRF International Rectifier | IRF | ||
HEXFET Power MOSFET | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
HEXFET? Power MOSFET | IRF International Rectifier | IRF | ||
Advanced Process Technology | IRF International Rectifier | IRF | ||
N-Channel 100-V (D-S) MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體(臺灣)有限公司 | VBSEMI |
詳細參數(shù)
- 型號:
IRFR3710Z
- 制造商:
International Rectifier
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
INFINEON |
24+ |
標(biāo)準(zhǔn) |
52067 |
熱賣原裝進口 |
詢價 | ||
IR |
23+ |
SOT-252 |
65400 |
詢價 | |||
IR |
13+ |
D-PAK |
4000 |
原裝現(xiàn)貨,假一賠百 |
詢價 | ||
IR |
24+ |
N/A |
8000 |
全新原裝正品,現(xiàn)貨銷售 |
詢價 | ||
IR |
2024+ |
N/A |
70000 |
柒號只做原裝 現(xiàn)貨價秒殺全網(wǎng) |
詢價 | ||
INFINEON/英飛凌 |
23+ |
TO252-3 |
360000 |
專業(yè)供應(yīng)MOS/LDO/晶體管/有大量價格低 |
詢價 | ||
IR |
23+ |
SOT252 |
1200 |
絕對全新原裝!優(yōu)勢供貨渠道!特價!請放心訂購! |
詢價 | ||
IR |
24+ |
D-Pak |
8866 |
詢價 | |||
IR |
23+ |
TO-252 |
35890 |
詢價 | |||
IR |
16+ |
NA |
8800 |
原裝現(xiàn)貨,貨真價優(yōu) |
詢價 |
相關(guān)規(guī)格書
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相關(guān)庫存
更多- IRFR3710ZTRLPBF
- IRFR3711TRPBF
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- IRFR3910TRLPBF-CUTTAPE
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