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IRFR3710Z

AUTOMOTIVE MOSFET

Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimpro

IRF

International Rectifier

IRFR3710Z

N-Channel MOSFET Transistor

?DESCRITION ?Fastswitching ?FEATURES ?Staticdrain-sourceon-resistance:RDS(on)≤18m? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRFR3710ZPBF

AUTOMOTIVE MOSFET

Description ThisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveavalancherating.Thesefeaturesco

IRF

International Rectifier

IRFR3710ZPBF

HEXFET? Power MOSFET

Description ThisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveavalancherating.Thesefeaturesco

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IRFR3710ZPBF

AUTOMOTIVE MOSFET

Description ThisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveavalancherating.Thesefeaturesco

KERSEMI

Kersemi Electronic Co., Ltd.

IRFR3710ZPBF

AUTOMOTIVE MOSFET

Description ThisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveavalancherating.Thesefeaturesco

KERSEMI

Kersemi Electronic Co., Ltd.

IRFR3710ZTRLPbF

HEXFET? Power MOSFET

Description ThisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveavalancherating.Thesefeaturesco

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IRFR3710ZPBF

HEXFET Power MOSFET

KERSEMI

Kersemi Electronic Co., Ltd.

IRFR3710ZPBF

Advanced Process Technology

IRF

International Rectifier

IRFR3710ZPBF

Advanced Process Technology

IRF

International Rectifier

IRFR3710ZPBF_15

Advanced Process Technology

IRF

International Rectifier

IRFR3710ZTRL

HEXFET Power MOSFET

KERSEMI

Kersemi Electronic Co., Ltd.

IRFR3710ZTRLPBF

HEXFET? Power MOSFET

IRF

International Rectifier

IRFR3710ZTRPBF

Advanced Process Technology

IRF

International Rectifier

IRFR3710ZTRPBF

N-Channel 100-V (D-S) MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺灣)有限公司

詳細參數(shù)

  • 型號:

    IRFR3710Z

  • 制造商:

    International Rectifier

供應(yīng)商型號品牌批號封裝庫存備注價格
INFINEON
24+
標(biāo)準(zhǔn)
52067
熱賣原裝進口
詢價
IR
23+
SOT-252
65400
詢價
IR
13+
D-PAK
4000
原裝現(xiàn)貨,假一賠百
詢價
IR
24+
N/A
8000
全新原裝正品,現(xiàn)貨銷售
詢價
IR
2024+
N/A
70000
柒號只做原裝 現(xiàn)貨價秒殺全網(wǎng)
詢價
INFINEON/英飛凌
23+
TO252-3
360000
專業(yè)供應(yīng)MOS/LDO/晶體管/有大量價格低
詢價
IR
23+
SOT252
1200
絕對全新原裝!優(yōu)勢供貨渠道!特價!請放心訂購!
詢價
IR
24+
D-Pak
8866
詢價
IR
23+
TO-252
35890
詢價
IR
16+
NA
8800
原裝現(xiàn)貨,貨真價優(yōu)
詢價
更多IRFR3710Z供應(yīng)商 更新時間2024-12-23 20:18:00