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IRFD020PBF

Power MOSFET

DESCRIPTION TheHVMDIPtechnologyisthekeytoVishay’sadvancedlineofpowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingoftheHVMDIPdesignachievesverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness.HVMDIPsfeatureallofthe

VishayVishay Siliconix

威世科技威世科技半導體

IRFD020PBF

Power MOSFET

VishayVishay Siliconix

威世科技威世科技半導體

IRFR020

HEXFETRPowerMOSFET

DESCRIPTION ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniq

IRF

International Rectifier

IRFR020

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques. FEATU

VishayVishay Siliconix

威世科技威世科技半導體

IRFR020

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導體

IRFR020

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導體

IRFR020

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques. FEATU

KERSEMI

Kersemi Electronic Co., Ltd.

IRFR020

N-ChannelMOSFETusesadvancedtrenchtechnology

DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

杜因特深圳市杜因特半導體有限公司

IRFR020

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IRFR020

PowerMOSFET

FEATURES ?DynamicdV/dtrating ?Surface-mount(IRFR020,SiHFR020) ?Availableintapeandreel ?Fastswitching ?Easeofparalleling ?Simpledriverequirements ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 DESCRIPTION Thirdgeneration

VishayVishay Siliconix

威世科技威世科技半導體

詳細參數(shù)

  • 型號：

    IRFD020PBF

  • 功能描述：

    MOSFET N-Chan 50V 2.4 Amp

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應商型號品牌批號封裝庫存備注價格
Vishay Siliconix
24+
4-HVMDIP
30000
晶體管-分立半導體產(chǎn)品-原裝正品
 詢價
IR
24+
DIP-4
3072
只做原廠渠道 可追溯貨源
 詢價
VISHAY(威世)
23+
HVMDIP-4
9555
支持大陸交貨,美金交易。原裝現(xiàn)貨庫存。
 詢價
VishayIR
24+
4-DIP
515
詢價
VISHAY
23+
DIP2
7750
全新原裝優(yōu)勢
 詢價
IR
23+
DIP-4
5000
原裝正品,假一罰十
 詢價
IR
17+
DIP-4
9700
只做全新進口原裝,現(xiàn)貨庫存
 詢價
ON
23+
NA
6500
全新原裝假一賠十
 詢價
IR
22+23+
DIP-4
28360
絕對原裝正品全新進口深圳現(xiàn)貨
 詢價
IR
24+
DIP-4
90000
一級代理商進口原裝現(xiàn)貨、價格合理
 詢價
更多IRFD020PBF供應商 更新時間2025-1-22 16:26:00

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