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IRFD220PBF

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. The4pinDIPpackageisalowcostmachine-insertablecasestylewhichcanbestackedinmultiplecombinat

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFD220PBF

HEXFET? Power MOSFET

HEXFETPowerMOSFET

IRF

International Rectifier

IRFD220PBF

Power MOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFE220

REPETITIVEAVALANCHEANDdv/dtRATEDHEXFETTRANSISTORSSURFACEMOUNT(LCC-18)

REPETITIVEAVALANCHEANDdv/dtRATED HEXFET?TRANSISTORS SURFACEMOUNT(LCC-18) Theleadlesschipcarrier(LCC)packagerepresentsthelogicalnextstepinthecontinualevolutionofsurfacemounttechnology.DesingedtobeaclosereplacementfortheTO-39package,theLCCwillgivedesignerst

IRF

International Rectifier

IRFE220

SimpleDriveRequirements

IRF

International Rectifier

IRFF220

3.5A,200V,0.800Ohm,N-ChannelPowerMOSFET

ThisN-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchasswitching

Intersil

Intersil Corporation

IRFF220

N??HANNELPOWERMOSFET

SEME-LAB

Seme LAB

IRFF220

AbsoluteMaximumRatings

N-ChannelPowerMOSFET

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

IRFM220A

AdvancedPowerMOSFET

FEATURES ■AvalancheRuggedTechnology ■RuggedGateOxideTechnology ■LowerInputCapacitance ■ImprovedGateCharge ■ExtendedSafeOperatingArea ■LowerLeakageCurrent:10μA(Max.)@VDS=200V ■LowRDS(ON):0.626Ω(Typ.)

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRFM220B

200VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

詳細參數(shù)

  • 型號：

    IRFD220PBF

  • 功能描述：

    MOSFET N-Chan 200V 0.8 Amp

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號品牌批號封裝庫存備注價格
Vishay Siliconix
24+
4-HVMDIP
30000
晶體管-分立半導(dǎo)體產(chǎn)品-原裝正品
 詢價
VISHAY
21+
HVMDIP-4 (HEXDIP-4)
1500
原裝正品 有掛有貨
 詢價
VISHAY
18+
1500
HVMDIP-4 (HEXDIP-4)
 詢價
VISHAY
23+
HVMDIP-4 (HEXDIP-4)
1500
原裝現(xiàn)貨支持送檢
 詢價
VISHAY(威世)
23+
HVMDIP
7863
支持大陸交貨,美金交易。原裝現(xiàn)貨庫存。
 詢價
VISHAY
13+
HVMDIP-4(HEXDIP-4)
3000
原裝正品現(xiàn)貨庫存價優(yōu)
 詢價
IR
23+
DIP-4
9896
詢價
VISHAY
23+
DIP2
7750
全新原裝優(yōu)勢
 詢價
IRF
23+
NA
19960
只做進口原裝,終端工廠免費送樣
 詢價
VishayPCS
新
2291
全新原裝 貨期兩周
 詢價
更多IRFD220PBF供應(yīng)商 更新時間2025-2-13 14:14:00

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