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IRFB38N20DPBF

HEXFET Power MOSFET

Applications ?HighfrequencyDC-DCconverters ?PlasmaDisplayPanel ?Lead-Free Benefits ?LowGate-to-DrainChargetoReduceSwitchingLosses ?FullyCharacterizedCapacitanceIncludingEffectiveCOSStoSimplifyDesign,(SeeApp.NoteAN1001) ?FullyCharacterizedAvalan

IRF

International Rectifier

IRFB38N20DPBF

HEXFET Power MOSFET

Applications ?HighfrequencyDC-DCconverters ?PlasmaDisplayPanel ?Lead-Free Benefits ?LowGate-to-DrainChargetoReduceSwitchingLosses ?FullyCharacterizedCapacitanceIncludingEffectiveCOSStoSimplifyDesign,(SeeApp.NoteAN1001) ?FullyCharacterizedAvalan

IRF

International Rectifier

IRFB38N20DPBF

HEXFET? Power MOSFET

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IRFS38N20D

PowerMOSFET(Vdss=200V,Rds(on)max=0.054ohm,Id=44A)

Applications ?HighfrequencyDC-DCconverters Benefits ?LowGate-to-DrainChargetoReduceSwitchingLosses ?FullyCharacterizedCapacitanceIncludingEffectiveCOSStoSimplifyDesign,(SeeApp.NoteAN1001) ?FullyCharacterizedAvalancheVoltageandCurrent

IRF

International Rectifier

IRFS38N20D

IscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRFS38N20D

HEXFETPowerMOSFET

Applications ?HighfrequencyDC-DCconverters ?PlasmaDisplayPanel ?Lead-Free Benefits ?LowGate-to-DrainChargetoReduceSwitchingLosses ?FullyCharacterizedCapacitanceIncludingEffectiveCOSStoSimplifyDesign,(SeeApp.NoteAN1001) ?FullyCharacterizedAvalan

IRF

International Rectifier

IRFS38N20DPBF

HEXFETPowerMOSFET

Applications ?HighfrequencyDC-DCconverters ?PlasmaDisplayPanel ?Lead-Free Benefits ?LowGate-to-DrainChargetoReduceSwitchingLosses ?FullyCharacterizedCapacitanceIncludingEffectiveCOSStoSimplifyDesign,(SeeApp.NoteAN1001) ?FullyCharacterizedAvalan

IRF

International Rectifier

IRFS38N20DPBF

HighfrequencyDC-DCconverters

IRF

International Rectifier

IRFS38N20DPbF

HEXFET?PowerMOSFET

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IRFS38N20DTRLP

HEXFETPowerMOSFET

IRF

International Rectifier

IRFS38N20DTRLPbF

HEXFET?PowerMOSFET

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IRFSL38N20D

PowerMOSFET(Vdss=200V,Rds(on)max=0.054ohm,Id=44A)

Applications ?HighfrequencyDC-DCconverters Benefits ?LowGate-to-DrainChargetoReduceSwitchingLosses ?FullyCharacterizedCapacitanceIncludingEffectiveCOSStoSimplifyDesign,(SeeApp.NoteAN1001) ?FullyCharacterizedAvalancheVoltageandCurrent

IRF

International Rectifier

IRFSL38N20D

HEXFETPowerMOSFET

Applications ?HighfrequencyDC-DCconverters ?PlasmaDisplayPanel ?Lead-Free Benefits ?LowGate-to-DrainChargetoReduceSwitchingLosses ?FullyCharacterizedCapacitanceIncludingEffectiveCOSStoSimplifyDesign,(SeeApp.NoteAN1001) ?FullyCharacterizedAvalan

IRF

International Rectifier

IRFSL38N20DPbF

HEXFET?PowerMOSFET

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IRFSL38N20DPBF

HEXFETPowerMOSFET

Applications ?HighfrequencyDC-DCconverters ?PlasmaDisplayPanel ?Lead-Free Benefits ?LowGate-to-DrainChargetoReduceSwitchingLosses ?FullyCharacterizedCapacitanceIncludingEffectiveCOSStoSimplifyDesign,(SeeApp.NoteAN1001) ?FullyCharacterizedAvalan

IRF

International Rectifier

詳細參數(shù)

  • 型號:

    IRFB38N20DPBF

  • 功能描述:

    MOSFET MOSFT 200V 44A 54mOhm 60nC

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

供應(yīng)商型號品牌批號封裝庫存備注價格
IR
2305+
TO220
30000
15年芯片行業(yè)經(jīng)驗/只供原裝正品:0755-83267371鄒小姐
詢價
INFINEON
23+
36000
原裝正品
詢價
IR
23+
TO-220
20540
保證進口原裝現(xiàn)貨假一賠十
詢價
IR
2020+
TO-220
9600
百分百原裝正品 真實公司現(xiàn)貨庫存 本公司只做原裝 可
詢價
IR
24+
TO-220
20000
原裝正品現(xiàn)貨
詢價
IR
2020+
to-220
22000
全新原裝正品 現(xiàn)貨庫存 價格優(yōu)勢
詢價
INFINEON/IR
18+
TO-220-3
450
詢價
INFINEON/英飛凌
21+
TO220
20000
原裝現(xiàn)貨假一罰十
詢價
INFINEON/IR
1907+
NA
7750
20年老字號,原裝優(yōu)勢長期供貨
詢價
INFINEON
22+
?TO-220AB
20000
原裝正品可支持驗貨,歡迎咨詢
詢價
更多IRFB38N20DPBF供應(yīng)商 更新時間2025-1-8 13:30:00