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IRFB59N10DPBF

HEXFET Power MOSFET

Benefits ●LowGate-to-DrainChargetoReduceSwitchingLosses ●FullyCharacterizedCapacitanceIncludingEffectiveCOSStoSimplifyDesign,(SeeApp.NoteAN1001) ●FullyCharacterizedAvalancheVoltageandCurrent Applications ●HighfrequencyDC-DCconverters ●UPS/MotorControlInvert

IRF

International Rectifier

IRFB59N10DPBF

High frequency DC-DC converters

IRF

International Rectifier

IRFB59N10DPBF

N-Channel 100-V (D-S) MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司

IRFB59N10DPBF_15

High frequency DC-DC converters

IRF

International Rectifier

IIRFB59N10D

N-ChannelMOSFETTransistor

?DESCRITION ?reliabledeviceforuseinawidevarietyofapplications ?FEATURES ?Staticdrain-sourceon-resistance:RDS(on)≤0.025? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IRFB59N10

PowerMOSFET(Vdss=100V,Rds(on)max=0.025ohm,Id=59A)

Benefits ●LowGate-to-DrainChargetoReduceSwitchingLosses ●FullyCharacterizedCapacitanceIncludingEffectiveCOSStoSimplifyDesign,(SeeApp.NoteAN1001) ●FullyCharacterizedAvalancheVoltageandCurrent Applications ●HighfrequencyDC-DCconverters

IRF

International Rectifier

IRFB59N10D

N-ChannelMOSFETTransistor

?DESCRITION ?reliabledeviceforuseinawidevarietyofapplications ?FEATURES ?Staticdrain-sourceon-resistance:RDS(on)≤0.025? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IRFB59N10D

PowerMOSFET(Vdss=100V,Rds(on)max=0.025ohm,Id=59A)

Benefits ●LowGate-to-DrainChargetoReduceSwitchingLosses ●FullyCharacterizedCapacitanceIncludingEffectiveCOSStoSimplifyDesign,(SeeApp.NoteAN1001) ●FullyCharacterizedAvalancheVoltageandCurrent Applications ●HighfrequencyDC-DCconverters

IRF

International Rectifier

IRFS59N10D

PowerMOSFET(Vdss=100V,Rds(on)max=0.025ohm,Id=59A)

Benefits ●LowGate-to-DrainChargetoReduceSwitchingLosses ●FullyCharacterizedCapacitanceIncludingEffectiveCOSStoSimplifyDesign,(SeeApp.NoteAN1001) ●FullyCharacterizedAvalancheVoltageandCurrent Applications ●HighfrequencyDC-DCconverters

IRF

International Rectifier

IRFS59N10D

IscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

詳細(xì)參數(shù)

  • 型號(hào)：

    IRFB59N10DPBF

  • 功能描述：

    MOSFET MOSFT 100V 59A 25mOhm 76nC

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
INFINEON/IR
14+
TO-220-3
540
詢(xún)價(jià)
INFINEON/IR
1907+
NA
1540
20年老字號(hào),原裝優(yōu)勢(shì)長(zhǎng)期供貨
 詢(xún)價(jià)
IR
23+
TO-220AB
65400
詢(xún)價(jià)
IR
17+
TO-220
6850
主營(yíng)IR可含稅只做全新原裝正品現(xiàn)貨
 詢(xún)價(jià)
INFINEON/英飛凌
2021+
TO-220
9000
原裝現(xiàn)貨,隨時(shí)歡迎詢(xún)價(jià)
 詢(xún)價(jià)
Infineon(英飛凌)
23+
TO-220
8498
支持大陸交貨,美金交易。原裝現(xiàn)貨庫(kù)存。
 詢(xún)價(jià)
IR
24+
TO-220-3
3765
詢(xún)價(jià)
IR
23+
TO-220AB
8238
詢(xún)價(jià)
IR
23+
TO-220AB-
7750
全新原裝優(yōu)勢(shì)
 詢(xún)價(jià)
IR
23+
TO-220AB
5000
原裝正品,假一罰十
 詢(xún)價(jià)
更多IRFB59N10DPBF供應(yīng)商 更新時(shí)間2025-2-2 14:00:00

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