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IRF9620SPBF

HEXFET Power MOSFET

Description TheHEXFETtechnologyisthekeytoInternationalRectifiersadvancedlineofpowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingoftheHEXFETdesignachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. ?SurfaceM

IRF

International Rectifier

IRF9620SPbF

Power MOSFET

DESCRIPTION ThePowerMOSFETstechnologyisthekeytoVishay’sadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFETsdesignachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheD2PAK(T

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF9620SPBF

Power MOSFET

FEATURES ?Surface-mount ?Availableintapeandreel ?DynamicdV/dtrating ?P-channel ?Fastswitching ?Easeofparalleling ?Simpledriverequirements ?Materialcategorization:fordefinitionsof compliancepleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovidesinforma

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF9620STRLPbF

PowerMOSFET

DESCRIPTION ThePowerMOSFETstechnologyisthekeytoVishay’sadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFETsdesignachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheD2PAK(T

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF9620STRLPBFA

PowerMOSFET

FEATURES ?Surface-mount ?Availableintapeandreel ?DynamicdV/dtrating ?P-channel ?Fastswitching ?Easeofparalleling ?Simpledriverequirements ?Materialcategorization:fordefinitionsof compliancepleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovidesinforma

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFI9620G

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220FULLPAKeliminatestheneedforadditionalinsulatinghardwareincommercial-industrialapplicat

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFI9620G

PowerMOSFET(Vdss=-200V,Rds(on)=1.5ohm,Id=-3.0A)

HEXFETPowerMOSFET

IRF

International Rectifier

IRFI9620G

PowerMOSFET

FEATURES ?Isolatedpackage ?Highvoltageisolation=2.5kVRMS(t=60s; f=60Hz) ?Sinktoleadcreepagedistance=4.8mm ?P-channel ?DynamicdV/dtrating ?Lowthermalresistance ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 DESC

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFI9620GPBF

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220FULLPAKeliminatestheneedforadditionalinsulatinghardwareincommercial-industrialapplicat

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

MAX9620

Single/DualSC70,Zero-Drift,High-Efficiency,1.5MHzOpAmpswithRRIO

MaximMaxim Integrated Products

美信美信半導(dǎo)體

詳細(xì)參數(shù)

  • 型號：

    IRF9620SPBF

  • 功能描述：

    MOSFET P-Chan 200V 3.5 Amp

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號品牌批號封裝庫存備注價格
Vishay Siliconix
24+
D2PAK(TO-263)
30000
晶體管-分立半導(dǎo)體產(chǎn)品-原裝正品
 詢價
VISHAY(威世)
23+
TO-263
8498
支持大陸交貨,美金交易。原裝現(xiàn)貨庫存。
 詢價
IRF
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費送樣
 詢價
VISHAY
1809+
TO-263
1675
就找我吧!--邀您體驗愉快問購元件!
 詢價
Vishay Siliconix
22+
TO2633 D2Pak (2 Leads + Tab) T
9000
原廠渠道,現(xiàn)貨配單
 詢價
Vishay Siliconix
21+
TO2633 D2Pak (2 Leads + Tab) T
13880
公司只售原裝,支持實單
 詢價
IR
23+
TO-263
4500
全新原裝、誠信經(jīng)營、公司現(xiàn)貨銷售
 詢價
IR
22+
TO-263
8000
原裝正品支持實單
 詢價
Vishay Siliconix
23+
TO2633 D2Pak (2 Leads + Tab) T
9000
原裝正品，支持實單
 詢價
Vishay Siliconix
2022+
TO-263-3,D2Pak(2 引線 + 接片
38550
全新原裝 支持表配單 中國著名電子元器件獨立分銷
 詢價
更多IRF9620SPBF供應(yīng)商 更新時間2025-1-26 14:14:00

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