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零件編號	下載&訂購	功能描述	制造商&上傳企業(yè)	LOGO
FB9N60A	文件：135.44 Kbytes Page：8 Pages	Power MOSFET(Vdss=600V, Rds(on)=0.75ohm, Id=9.2A) Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowonresistanceandcost-effectiveness. TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpower	IRF International Rectifier	IRF
FCD9N60N	文件：784.87 Kbytes Page：8 Pages	N-ChannelMOSFET	FairchildFairchild Semiconductor 仙童半導體飛兆/仙童半導體公司	Fairchild
FCD9N60NTM	文件：784.87 Kbytes Page：8 Pages	N-ChannelMOSFET	FairchildFairchild Semiconductor 仙童半導體飛兆/仙童半導體公司	Fairchild
FCD9N60NTM	文件：353.76 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=9A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=385mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司	ISC
FCP9N60N	文件：911.95 Kbytes Page：10 Pages	N-ChannelMOSFET600V,9A,0.385廓	FairchildFairchild Semiconductor 仙童半導體飛兆/仙童半導體公司	Fairchild
FCP9N60N	文件：336.5 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=9A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=385mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司	ISC
FCPF9N60NT	文件：651.06 Kbytes Page：10 Pages	N-ChannelSupreMOS?MOSFET	FairchildFairchild Semiconductor 仙童半導體飛兆/仙童半導體公司	Fairchild
FCPF9N60NT	文件：911.95 Kbytes Page：10 Pages	N-ChannelMOSFET600V,9A,0.385廓	FairchildFairchild Semiconductor 仙童半導體飛兆/仙童半導體公司	Fairchild
FCPF9N60NT	文件：323.2 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=9A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=385mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司	ISC
IRFB9N60	文件：135.44 Kbytes Page：8 Pages	PowerMOSFET(Vdss=600V,Rds(on)=0.75ohm,Id=9.2A) Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowonresistanceandcost-effectiveness. TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpower	IRF International Rectifier	IRF
IRFB9N60A	文件：303.68 Kbytes Page：9 Pages	PowerMOSFET	VishayVishay Siliconix 威世科技威世科技半導體	Vishay
IRFB9N60A	文件：329.36 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司	ISC
IRFB9N60A	文件：331.87 Kbytes Page：21 Pages	IRPLLNR5WideRangeInputLinearFluorescentBallast	IRF International Rectifier	IRF
IRFB9N60A	文件：302.95 Kbytes Page：9 Pages	Switchmodepowersupply	VishayVishay Siliconix 威世科技威世科技半導體	Vishay
IRFB9N60A	文件：135.44 Kbytes Page：8 Pages	PowerMOSFET(Vdss=600V,Rds(on)=0.75ohm,Id=9.2A) Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowonresistanceandcost-effectiveness. TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpower	IRF International Rectifier	IRF
IRFB9N60APBF	文件：160.96 Kbytes Page：9 Pages	HEXFETPowerMOSFET Benefits ?LowGateChargeQgresultsinSimpleDriveRequirement ?ImprovedGate,Avalancheanddynamicdv/dtRuggedness ?FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent Applications ?SwitchModePowerSupply(SMPS) ?UninterruptablePowerSupply ?Highspeedpowersw	IRF International Rectifier	IRF
IRFS9N60A	文件：322.87 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor ?DESCRITION ?SwitchingVoltageRegulators ?FEATURES ?Lowdrain-sourceon-resistance: RDS(ON)=0.75?(MAX) ?Enhancementmode: Vth=2.0to4.0V(VDS=10V,ID=0.25mA) ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司	ISC
IRFS9N60A	文件：165.8 Kbytes Page：8 Pages	PowerMOSFET FEATURES ?LowGateChargeQgresultsinSimpleDrive ??Requirement ?ImprovedGate,AvalancheandDynamicdV/dt ??Ruggedness ?FullyCharacterizedCapacitanceandAvalancheVoltage ??andCurrent ?Lead(Pb)-freeAvailable APPLICATIONS ?SwitchModePowerSupply(SMPS) ?Uninterruptib	VishayVishay Siliconix 威世科技威世科技半導體	Vishay
IRFS9N60A	文件：105.19 Kbytes Page：9 Pages	SMPSMOSFET Benefits ?LowGateChargeQgresultsinSimpleDriveRequirement ?ImprovedGate,Avalancheanddynamicdv/dtRuggedness ?FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent Applications ?SwitchModePowerSupply(SMPS) ?UninterruptablePowerSupply ?HighSpeedPowerSw	IRF International Rectifier	IRF
IRFS9N60A	文件：223.37 Kbytes Page：10 Pages	PowerMOSFET FEATURES ?LowgatechargeQgresultsinsimpledrive requirement ?Improvedgate,avalancheanddynamicdV/dt ruggedness ?Fullycharacterizedcapacitanceandavalanche voltageandcurrent ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note?	VishayVishay Siliconix 威世科技威世科技半導體	Vishay

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供應商	型號	品牌	批號	封裝	庫存	備注	價格
深圳市博浩通科技有限公司	FB9N60A	IR	23+	TO-220	3000	全新原裝	詢價
深圳市壹芯創(chuàng)科技有限公司	FB9N60A	IR	22+	DIP-12	12500	進口原裝!現(xiàn)貨庫存	詢價
深圳市躍創(chuàng)芯科技有限公司	FB9N60A	IR	22+	TO220	12000	只做原裝、原廠優(yōu)勢渠道、假一賠十	詢價
深圳市河鋒鑫科技有限公司	FB9N60A	IR	22+	TO-220	6000	終端可免費供樣,支持BOM配單	詢價
深圳市創(chuàng)新跡電子有限公司	FB9N60A	IR	22+	TO220	12000	只做原裝、原廠優(yōu)勢渠道、假一賠十	詢價
深圳市辰德隆電子科技有限公司	FB9N60A	IR	23+	TO220	6000	只有原裝正品,老板發(fā)話合適就出	詢價
深圳市安富世紀電子有限公司	FB9N60A	IR	23+	TO-220	8000	只做原裝現(xiàn)貨	詢價
深圳市明嘉萊科技有限公司	FB9N60A	IR	24+	TO220	990000	明嘉萊只做原裝正品現(xiàn)貨	詢價
天津市博通航睿技術有限公司	FB9N60A	IR	23+	TO-220	7000		詢價
深圳市力通偉業(yè)半導體有限公司	FB9N60AP6F	IR	13+	TO-220	1000	特價熱銷現(xiàn)貨庫存	詢價

更多FB9N60供應商更新時間2024-11-15 10:35:00

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